Rohm Semiconductor 2SC2413KT146P
- Part Number:
- 2SC2413KT146P
- Manufacturer:
- Rohm Semiconductor
- Ventron No:
- 2845721-2SC2413KT146P
- Description:
- TRANS NPN 25V 0.05A SOT-346
- Datasheet:
- 2SC2413KT146P
Rohm Semiconductor 2SC2413KT146P technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor 2SC2413KT146P.
- Factory Lead Time10 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2004
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTIN SILVER COPPER
- SubcategoryOther Transistors
- Voltage - Rated DC25V
- Max Power Dissipation200mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating50mA
- Frequency300MHz
- Time@Peak Reflow Temperature-Max (s)10
- Base Part Number2SC2413
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation200mW
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product300MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)25V
- Max Collector Current50mA
- DC Current Gain (hFE) (Min) @ Ic, Vce82 @ 1mA 6V
- Current - Collector Cutoff (Max)500nA ICBO
- Vce Saturation (Max) @ Ib, Ic300mV @ 1mA, 10mA
- Collector Emitter Breakdown Voltage25V
- Transition Frequency300MHz
- Collector Emitter Saturation Voltage100mV
- Max Breakdown Voltage25V
- Collector Base Voltage (VCBO)40V
- Emitter Base Voltage (VEBO)5V
- hFE Min82
- Continuous Collector Current50mA
- Collector-Base Capacitance-Max2.2pF
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2SC2413KT146P Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 82 @ 1mA 6V DC current gain.As it features a collector emitter saturation voltage of 100mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at 50mA.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 300MHz in the part.Single BJT transistor can be broken down at a voltage of 25V volts.When collector current reaches its maximum, it can reach 50mA volts.
2SC2413KT146P Features
the DC current gain for this device is 82 @ 1mA 6V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 300mV @ 1mA, 10mA
the emitter base voltage is kept at 5V
the current rating of this device is 50mA
a transition frequency of 300MHz
2SC2413KT146P Applications
There are a lot of ROHM Semiconductor
2SC2413KT146P applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 82 @ 1mA 6V DC current gain.As it features a collector emitter saturation voltage of 100mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at 50mA.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 300MHz in the part.Single BJT transistor can be broken down at a voltage of 25V volts.When collector current reaches its maximum, it can reach 50mA volts.
2SC2413KT146P Features
the DC current gain for this device is 82 @ 1mA 6V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 300mV @ 1mA, 10mA
the emitter base voltage is kept at 5V
the current rating of this device is 50mA
a transition frequency of 300MHz
2SC2413KT146P Applications
There are a lot of ROHM Semiconductor
2SC2413KT146P applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2SC2413KT146P More Descriptions
2SC2413K Series 25 V 50 mA SMT NPN High-frequency Amplifier Transistor - SC-59
Trans GP BJT NPN 25V 0.05A 3-Pin SMT T/R
TRANSISTOR,NPN,25V,0.05A SOT-346; Transistor Polarity:N Channel; Collector Emitter Voltage V(br)ceo:25V; Gain Bandwidth ft Typ:300MHz; Power Dissipation Pd:200mW; DC Collector Current:50mA; DC Current Gain hFE:82; Transistor Case ;RoHS Compliant: Yes
Trans GP BJT NPN 25V 0.05A 3-Pin SMT T/R
TRANSISTOR,NPN,25V,0.05A SOT-346; Transistor Polarity:N Channel; Collector Emitter Voltage V(br)ceo:25V; Gain Bandwidth ft Typ:300MHz; Power Dissipation Pd:200mW; DC Collector Current:50mA; DC Current Gain hFE:82; Transistor Case ;RoHS Compliant: Yes
The three parts on the right have similar specifications to 2SC2413KT146P.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentCollector-Base Capacitance-MaxREACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackagePower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionReach Compliance CodeContact PlatingHTS CodeMax FrequencyVCEsat-MaxHeightLengthWidthView Compare
-
2SC2413KT146P10 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-33SILICON150°C TJTape & Reel (TR)2004e1yesNot For New Designs1 (Unlimited)3EAR99TIN SILVER COPPEROther Transistors25V200mWDUALGULL WING26050mA300MHz102SC241331Single200mWAMPLIFIER300MHzNPNNPN25V50mA82 @ 1mA 6V500nA ICBO300mV @ 1mA, 10mA25V300MHz100mV25V40V5V8250mA2.2pFNo SVHCNoROHS3 CompliantLead Free--------------
-
-Surface MountSurface MountTO-236-3, SC-59, SOT-23-3--150°C TJTape & Reel (TR)2003--Obsolete1 (Unlimited)----35V200mW---50mA--2SC2405-------NPN600mV50mA180 @ 2mA 5V1μA600mV @ 10mA, 100mA35V--35V-------Non-RoHS CompliantContains LeadMini3-G1200mW35V50mA200MHz--------
-
12 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-3--125°C TJTape & Reel (TR)2014-yesActive1 (Unlimited)-----150mW------2SC2712--Single--80MHz-NPN50V150mA70 @ 2mA 6V100nA ICBO250mV @ 10mA, 100mA50V-100mV50V60V5V-----RoHS Compliant--150mW---unknown-------
-
13 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-33SILICON150°C TJTape & Reel (TR)2004e1yesActive1 (Unlimited)3EAR99Tin/Silver/Copper (Sn/Ag/Cu)Other Transistors50V200mWDUALGULL WING260150mA-102SC241231Single-AMPLIFIER180MHzNPNNPN50V150mA120 @ 1mA 6V100nA ICBO400mV @ 5mA, 50mA50V180MHz400mV50V60V7V120150mA-No SVHCNoROHS3 CompliantLead Free------Copper, Silver, Tin8541.21.00.75180MHz0.4 V1.1mm2.9mm1.6mm
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
16 April 2024
All You Need to Know About the 74HC165 Eight-Bit Shift Register
Ⅰ. Introduction to 74HC165Ⅱ. Functions of 74HC165Ⅲ. Logic diagram of 74HC165Ⅳ. Working principle of 74HC165Ⅴ. Recommended operating conditions of 74HC165Ⅵ. Precautions for using 74HC165Ⅶ. What is the role... -
17 April 2024
TPS5450DDAR: High Performance Step-Down Switching Regulator
Ⅰ. Overview of TPS5450DDARⅡ. Technical parameters of TPS5450DDARⅢ. Simplified schematic of TPS5450DDARⅣ. Features and advantages of TPS5450DDARⅤ. How to configure the soft start function of TPS5450DDAR?Ⅵ. Concrete applications... -
17 April 2024
SI2302 Field Effect Transistor Characteristics, Use and Application Prospects
Ⅰ. Introduction to SI2302Ⅱ. Main characteristics of SI2302Ⅲ. SI2302 driving methodⅣ. Maximum ratings of SI2302Ⅴ. Tips for using SI2302Ⅵ. What can be used to replace SI2302?Ⅶ. Precautions for... -
18 April 2024
TDA2030A Audio Amplifier Manufacturer, Application, Precautions and TDA2030 vs TDA2030A
Ⅰ. TDA2030A descriptionⅡ. Manufacturer of TDA2030AⅢ. Pin voltage parameters of TDA2030AⅣ. Market demand for TDA2030AⅤ. Application circuit of TDA2030AⅥ. Which one is better, TDA2030A or LM1875?Ⅶ. Precautions for...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.