Rohm Semiconductor 2SB1427T100E
- Part Number:
- 2SB1427T100E
- Manufacturer:
- Rohm Semiconductor
- Ventron No:
- 2464576-2SB1427T100E
- Description:
- TRANS PNP 20V 2A SOT-89
- Datasheet:
- 2SB1427T100E
Rohm Semiconductor 2SB1427T100E technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor 2SB1427T100E.
- Factory Lead Time13 Weeks
- Contact PlatingCopper, Tin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-243AA
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published1998
- JESD-609 Codee2
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Copper (Sn/Cu)
- HTS Code8541.21.00.95
- SubcategoryOther Transistors
- Voltage - Rated DC-20V
- Max Power Dissipation2W
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Current Rating-2A
- Time@Peak Reflow Temperature-Max (s)10
- Base Part Number2SB1427
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Case ConnectionCOLLECTOR
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product90MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)20V
- Max Collector Current2A
- DC Current Gain (hFE) (Min) @ Ic, Vce390 @ 500mA 6V
- Current - Collector Cutoff (Max)500nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 1A
- Collector Emitter Breakdown Voltage20V
- Max Frequency100MHz
- Transition Frequency90MHz
- Collector Emitter Saturation Voltage-500mV
- Max Breakdown Voltage20V
- Collector Base Voltage (VCBO)-20V
- Emitter Base Voltage (VEBO)-6V
- hFE Min390
- Continuous Collector Current-2A
- VCEsat-Max0.5 V
- Height1.5mm
- Length4.5mm
- Width2.5mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2SB1427T100E Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 390 @ 500mA 6V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 50mA, 1A.Single BJT transistor is recommended to keep the continuous collector voltage at -2A in order to achieve high efficiency.The emitter base voltage can be kept at -6V for high efficiency.The current rating of this fuse is -2A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 90MHz.The breakdown input voltage is 20V volts.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.
2SB1427T100E Features
the DC current gain for this device is 390 @ 500mA 6V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 1A
the emitter base voltage is kept at -6V
the current rating of this device is -2A
a transition frequency of 90MHz
2SB1427T100E Applications
There are a lot of ROHM Semiconductor
2SB1427T100E applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 390 @ 500mA 6V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 50mA, 1A.Single BJT transistor is recommended to keep the continuous collector voltage at -2A in order to achieve high efficiency.The emitter base voltage can be kept at -6V for high efficiency.The current rating of this fuse is -2A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 90MHz.The breakdown input voltage is 20V volts.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.
2SB1427T100E Features
the DC current gain for this device is 390 @ 500mA 6V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 1A
the emitter base voltage is kept at -6V
the current rating of this device is -2A
a transition frequency of 90MHz
2SB1427T100E Applications
There are a lot of ROHM Semiconductor
2SB1427T100E applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2SB1427T100E More Descriptions
ROHM 2SB1427T100E PNP Bipolar Transistor, 2 A, 20 V, 3-Pin SC-62 | ROHM Semiconductor 2SB1427T100E
Trans GP BJT PNP 20V 2A 2000mW 4-Pin(3 Tab) MPT T/R
French Electronic Distributor since 1988
Trans GP BJT PNP 20V 2A 2000mW 4-Pin(3 Tab) MPT T/R
French Electronic Distributor since 1988
The three parts on the right have similar specifications to 2SB1427T100E.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishHTS CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageMax FrequencyTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentVCEsat-MaxHeightLengthWidthRadiation HardeningRoHS StatusLead FreeLifecycle StatusSurface MountConfigurationCurrent - Collector (Ic) (Max)Frequency - TransitionSupplier Device PackagePower - MaxVoltage - Collector Emitter Breakdown (Max)JESD-30 CodeView Compare
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2SB1427T100E13 WeeksCopper, TinSurface MountSurface MountTO-243AA3SILICON150°C TJTape & Reel (TR)1998e2yesActive1 (Unlimited)3EAR99Tin/Copper (Sn/Cu)8541.21.00.95Other Transistors-20V2WFLAT260-2A102SB142731SingleCOLLECTORAMPLIFIER90MHzPNPPNP20V2A390 @ 500mA 6V500nA ICBO500mV @ 50mA, 1A20V100MHz90MHz-500mV20V-20V-6V390-2A0.5 V1.5mm4.5mm2.5mmNoROHS3 CompliantLead Free----------
-
2 Weeks--Through HoleTO-251-3 Short Leads, IPak, TO-251AA3-150°C TJBulk2000e6yesActive1 (Unlimited)-EAR99Tin/Bismuth (Sn/Bi)-Other Transistors-1W-NOT SPECIFIED-NOT SPECIFIED2SB12023-----PNPPNP50V5A140 @ 100mA 2V1μA ICBO700mV @ 100mA, 2A50V---50V60V-6V100------ROHS3 CompliantLead FreeACTIVE (Last Updated: 1 day ago)NOSingle3A150MHz----
-
--Surface MountSurface MountSC-70, SOT-323--150°C TJTape & Reel (TR)2000--Obsolete1 (Unlimited)------50V150mW---500mA-2SB1219-------PNP600mV500mA170 @ 150mA 10V100nA ICBO600mV @ 30mA, 300mA50V---50V---------RoHS Compliant----500mA200MHzSMini3-G1150mW50V-
-
10 WeeksCopper, TinSurface MountSurface MountTO-243AA4SILICON150°C TJTape & Reel (TR)1999e2yesNot For New Designs1 (Unlimited)3-TIN COPPER-Other Transistors-80V2WFLAT260-1A102SB126031SingleCOLLECTORSWITCHING100MHzPNPPNP80V1A82 @ 100mA 3V1μA ICBO400mV @ 50mA, 500mA80V-100MHz---80V5V82-1A----NoROHS3 CompliantLead Free---1A----R-PSSO-F3
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