Panasonic Electronic Components 2SB1322A0A

Name: 2SB1322A0A
Brand: Panasonic Electronic Components
SKU: 2476589-2SB1322A0A
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: 2SB1322A0A

Manufacturer:: Panasonic Electronic Components

Ventron No:: 2476589-2SB1322A0A

Description:: TRANS PNP 50V 1A MT-2

ECAD Model:

Datasheet:: 2SB1322A Datasheet

Specifications

Panasonic Electronic Components 2SB1322A0A technical specifications, attributes, parameters and parts with similar specifications to Panasonic Electronic Components 2SB1322A0A.

Mount
Through Hole
Mounting Type
Through Hole
Package / Case
3-SIP
Number of Pins
3
Supplier Device Package
MT-2-A1
Operating Temperature
150°C TJ
Packaging
Tape & Box (TB)
Published
2003
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Voltage - Rated DC
-50V
Max Power Dissipation
1W
Current Rating
-1A
Base Part Number
2SB1322
Power - Max
1W
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
400mV
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
85 @ 500mA 10V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
50V
Voltage - Collector Emitter Breakdown (Max)
50V
Current - Collector (Ic) (Max)
1A
Max Breakdown Voltage
50V
Frequency - Transition
200MHz
RoHS Status
Non-RoHS Compliant

Description

2SB1322A0A Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 85 @ 500mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 50mA, 500mA.Its current rating is -1A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Single BJT transistor can take a breakdown input voltage of 50V volts.MT-2-A1 is the supplier device package for this product.This device displays a 50V maximum voltage - Collector Emitter Breakdown.During maximum operation, collector current can be as low as 1A volts.

2SB1322A0A Features
the DC current gain for this device is 85 @ 500mA 10V
the vce saturation(Max) is 400mV @ 50mA, 500mA
the current rating of this device is -1A
the supplier device package of MT-2-A1

2SB1322A0A Applications
There are a lot of Panasonic Electronic Components
2SB1322A0A applications of single BJT transistors.

Inverter
Interface
Driver
Muting

2SB1322A0A More Descriptions

TRANS PNP 50V 1A MT-2
TRANS PNP LF AMP 50VCEO MT-2

Product Comparison

The three parts on the right have similar specifications to 2SB1322A0A.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Supplier Device Package

Operating Temperature

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Voltage - Rated DC

Max Power Dissipation

Current Rating

Base Part Number

Power - Max

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Max Breakdown Voltage

Frequency - Transition

RoHS Status

Factory Lead Time

Contact Plating

Transistor Element Material

JESD-609 Code

Pbfree Code

Number of Terminations

Terminal Finish

Subcategory

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Number of Elements

Element Configuration

Case Connection

Transistor Application

Gain Bandwidth Product

Polarity/Channel Type

Transition Frequency

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Continuous Collector Current

Radiation Hardening

Lead Free

Lifecycle Status

ECCN Code

Surface Mount

Frequency

Power Dissipation

Collector Emitter Saturation Voltage

View Compare
2SB1322A0A

Panasonic Electronic Components

Through Hole

Through Hole

3-SIP

3

MT-2-A1

150°C TJ

Tape & Box (TB)

2003

Obsolete

1 (Unlimited)

-50V

1W

-1A

2SB1322

1W

PNP

400mV

1A

85 @ 500mA 10V

100nA ICBO

400mV @ 50mA, 500mA

50V

50V

1A

50V

200MHz

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
2SB1260T100P

Rohm Semiconductor

Surface Mount

Surface Mount

TO-243AA

4

-

150°C TJ

Tape & Reel (TR)

1999

Not For New Designs

1 (Unlimited)

-80V

2W

-1A

2SB1260

-

PNP

80V

1A

82 @ 100mA 3V

1μA ICBO

400mV @ 50mA, 500mA

80V

-

1A

-

-

ROHS3 Compliant

10 Weeks

Copper, Tin

SILICON

e2

yes

3

TIN COPPER

Other Transistors

FLAT

260

10

3

R-PSSO-F3

1

Single

COLLECTOR

SWITCHING

100MHz

PNP

100MHz

-80V

5V

82

-1A

No

Lead Free

-

-

-

-

-

-

2SB1322A0A vs 2SB1260T100P
2SB1201S-E

ON Semiconductor

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

-

150°C TJ

Bulk

2012

Active

1 (Unlimited)

-

800mW

-

2SB1201

800mW

PNP

50V

2A

140 @ 100mA 2V

100nA ICBO

700mV @ 50mA, 1A

50V

-

-

-

150MHz

ROHS3 Compliant

2 Weeks

-

-

e6

yes

-

Tin/Bismuth (Sn/Bi)

-

-

-

-

3

-

-

-

-

-

-

-

-

60V

-6V

100

-

-

Lead Free

ACTIVE (Last Updated: 1 week ago)

EAR99

-

-

-

-

2SB1322A0A vs 2SB1201S-E
2SB1215S-TL-E

ON Semiconductor

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

-

150°C TJ

Tape & Reel (TR)

2011

Active

1 (Unlimited)

-

1W

-

2SB1215

-

PNP

100V

3A

140 @ 500mA 5V

1μA ICBO

500mV @ 150mA, 1.5A

100V

-

-

-

-

ROHS3 Compliant

7 Weeks

-

-

e6

yes

-

Tin/Bismuth (Sn/Bi)

Other Transistors

-

-

-

3

-

1

Single

-

-

130MHz

PNP

-

120V

-6V

-

-

No

Lead Free

ACTIVE (Last Updated: 5 days ago)

EAR99

YES

130MHz

1W

-200mV

2SB1322A0A vs 2SB1215S-TL-E