2SB1316TL

Rohm Semiconductor 2SB1316TL

Part Number:
2SB1316TL
Manufacturer:
Rohm Semiconductor
Ventron No:
2845727-2SB1316TL
Description:
TRANS PNP DARL 100V 2A SOT-428
ECAD Model:
Datasheet:
2SB1580/1316

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Specifications
Rohm Semiconductor 2SB1316TL technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor 2SB1316TL.
  • Factory Lead Time
    20 Weeks
  • Contact Plating
    Copper, Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2004
  • JESD-609 Code
    e2
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • Termination
    SMD/SMT
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Copper (Sn98Cu2)
  • Additional Feature
    BUILT-IN BIAS RESISTOR
  • HTS Code
    8541.29.00.75
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -100V
  • Max Power Dissipation
    10W
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    -2A
  • Time@Peak Reflow Temperature-Max (s)
    10
  • Base Part Number
    2SB1316
  • Pin Count
    3
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    2
  • Polarity
    PNP
  • Voltage
    100V
  • Element Configuration
    Single
  • Current
    2A
  • Power Dissipation
    1W
  • Case Connection
    COLLECTOR
  • Transistor Application
    AMPLIFIER
  • Gain Bandwidth Product
    50MHz
  • Transistor Type
    PNP - Darlington
  • Collector Emitter Voltage (VCEO)
    100V
  • Max Collector Current
    2A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    1000 @ 1A 2V
  • Current - Collector Cutoff (Max)
    10μA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    1.5V @ 1mA, 1A
  • Collector Emitter Breakdown Voltage
    100V
  • Transition Frequency
    50MHz
  • Collector Emitter Saturation Voltage
    1.5V
  • Max Breakdown Voltage
    100V
  • Collector Base Voltage (VCBO)
    100V
  • Emitter Base Voltage (VEBO)
    8V
  • hFE Min
    1000
  • Continuous Collector Current
    -2A
  • Height
    2.3mm
  • Length
    6.5mm
  • Width
    5.5mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
2SB1316TL Overview
This device has a DC current gain of 1000 @ 1A 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1.5V.A VCE saturation (Max) of 1.5V @ 1mA, 1A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at -2A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 8V.This device has a current rating of -2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 50MHz.A breakdown input voltage of 100V volts can be used.A maximum collector current of 2A volts is possible.

2SB1316TL Features
the DC current gain for this device is 1000 @ 1A 2V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 1mA, 1A
the emitter base voltage is kept at 8V
the current rating of this device is -2A
a transition frequency of 50MHz


2SB1316TL Applications
There are a lot of ROHM Semiconductor
2SB1316TL applications of single BJT transistors.


Inverter
Interface
Driver
Muting
2SB1316TL More Descriptions
Small Signal Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 2-Element, PNP, Silicon
2SB1316 Series 100 V 2 A SMT Darlington PNP Power Transistor - SC-63
Trans Darlington PNP 100V 2A 1000mW 3-Pin(2 Tab) CPT T/R
ROHM 2SB1316TL PNP Darlington Transistor, 2 A 100 V HFE:1000, 3-Pin SC-63 | ROHM Semiconductor 2SB1316TL
TRANSISTOR D-PAK; BCE PNP;DARL; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:100V; Power Dissipation Pd:1W; DC Collector Current:-1A; DC Current Gain hFE:1000; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Av Current Ic:2A; Collector Emitter Voltage Vces:1.5V; Current Ic Continuous a Max:-1A; Gain Bandwidth ft Typ:50MHz; Hfe Min:1000; Package / Case:D-PAK; Power Dissipation Pd:1W; Termination Type:SMD; Transistor Type:Power Darlington; Voltage Vcbo:100V
TRANSISTOR D-PAK; BCE PNP;DARL,; Transistor Type:Power Darlington; Transistor Polarity:PNP; Collector-to-Emitter Breakdown Voltage:100V; Current Ic Continuous a Max:-1A; Voltage, Vce Sat Max:1.5V; Power Dissipation:1W; Min Hfe:1000;;RoHS Compliant: Yes
Product Comparison
The three parts on the right have similar specifications to 2SB1316TL.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Terminal Finish
    Additional Feature
    HTS Code
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Number of Elements
    Polarity
    Voltage
    Element Configuration
    Current
    Power Dissipation
    Case Connection
    Transistor Application
    Gain Bandwidth Product
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Transition Frequency
    Collector Emitter Saturation Voltage
    Max Breakdown Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    Continuous Collector Current
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Supplier Device Package
    Power - Max
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Frequency - Transition
    Qualification Status
    Polarity/Channel Type
    Lifecycle Status
    Surface Mount
    Frequency
    View Compare
  • 2SB1316TL
    2SB1316TL
    20 Weeks
    Copper, Tin
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    SILICON
    150°C TJ
    Tape & Reel (TR)
    2004
    e2
    yes
    Active
    1 (Unlimited)
    2
    SMD/SMT
    EAR99
    Tin/Copper (Sn98Cu2)
    BUILT-IN BIAS RESISTOR
    8541.29.00.75
    Other Transistors
    -100V
    10W
    GULL WING
    260
    -2A
    10
    2SB1316
    3
    R-PSSO-G2
    2
    PNP
    100V
    Single
    2A
    1W
    COLLECTOR
    AMPLIFIER
    50MHz
    PNP - Darlington
    100V
    2A
    1000 @ 1A 2V
    10μA ICBO
    1.5V @ 1mA, 1A
    100V
    50MHz
    1.5V
    100V
    100V
    8V
    1000
    -2A
    2.3mm
    6.5mm
    5.5mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • 2SB1218GSL
    -
    -
    Surface Mount
    Surface Mount
    SC-85
    85
    -
    150°C TJ
    Tape & Reel (TR)
    2007
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    -
    150mW
    -
    -
    -
    -
    2SB1218
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    PNP
    500mV
    100mA
    290 @ 2mA 10V
    100μA
    500mV @ 10mA, 100mA
    45V
    -
    -
    45V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    -
    SMini3-F2
    150mW
    45V
    100mA
    80MHz
    -
    -
    -
    -
    -
  • 2SB1236ATV2P
    -
    -
    Through Hole
    Through Hole
    ATV
    -
    SILICON
    150°C TJ
    Tape & Box (TB)
    2004
    e1
    -
    Obsolete
    1 (Unlimited)
    3
    -
    EAR99
    TIN SILVER COPPER
    -
    -
    Other Transistors
    -160V
    1W
    -
    260
    -1.5A
    10
    -
    3
    R-PSIP-T3
    1
    -
    -
    Single
    -
    -
    -
    SWITCHING
    50MHz
    PNP
    2V
    1.5A
    82 @ 100mA 5V
    1μA ICBO
    2V @ 100mA, 1A
    160V
    50MHz
    -
    -
    -160V
    5V
    82
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    1.5A
    -
    Not Qualified
    PNP
    -
    -
    -
  • 2SB1215S-TL-E
    7 Weeks
    -
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    -
    150°C TJ
    Tape & Reel (TR)
    2011
    e6
    yes
    Active
    1 (Unlimited)
    -
    -
    EAR99
    Tin/Bismuth (Sn/Bi)
    -
    -
    Other Transistors
    -
    1W
    -
    -
    -
    -
    2SB1215
    3
    -
    1
    -
    -
    Single
    -
    1W
    -
    -
    130MHz
    PNP
    100V
    3A
    140 @ 500mA 5V
    1μA ICBO
    500mV @ 150mA, 1.5A
    100V
    -
    -200mV
    -
    120V
    -6V
    -
    -
    -
    -
    -
    -
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    PNP
    ACTIVE (Last Updated: 5 days ago)
    YES
    130MHz
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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