Rohm Semiconductor 2SB1316TL
- Part Number:
- 2SB1316TL
- Manufacturer:
- Rohm Semiconductor
- Ventron No:
- 2845727-2SB1316TL
- Description:
- TRANS PNP DARL 100V 2A SOT-428
- Datasheet:
- 2SB1580/1316
Rohm Semiconductor 2SB1316TL technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor 2SB1316TL.
- Factory Lead Time20 Weeks
- Contact PlatingCopper, Tin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2004
- JESD-609 Codee2
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- TerminationSMD/SMT
- ECCN CodeEAR99
- Terminal FinishTin/Copper (Sn98Cu2)
- Additional FeatureBUILT-IN BIAS RESISTOR
- HTS Code8541.29.00.75
- SubcategoryOther Transistors
- Voltage - Rated DC-100V
- Max Power Dissipation10W
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-2A
- Time@Peak Reflow Temperature-Max (s)10
- Base Part Number2SB1316
- Pin Count3
- JESD-30 CodeR-PSSO-G2
- Number of Elements2
- PolarityPNP
- Voltage100V
- Element ConfigurationSingle
- Current2A
- Power Dissipation1W
- Case ConnectionCOLLECTOR
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product50MHz
- Transistor TypePNP - Darlington
- Collector Emitter Voltage (VCEO)100V
- Max Collector Current2A
- DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 1A 2V
- Current - Collector Cutoff (Max)10μA ICBO
- Vce Saturation (Max) @ Ib, Ic1.5V @ 1mA, 1A
- Collector Emitter Breakdown Voltage100V
- Transition Frequency50MHz
- Collector Emitter Saturation Voltage1.5V
- Max Breakdown Voltage100V
- Collector Base Voltage (VCBO)100V
- Emitter Base Voltage (VEBO)8V
- hFE Min1000
- Continuous Collector Current-2A
- Height2.3mm
- Length6.5mm
- Width5.5mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2SB1316TL Overview
This device has a DC current gain of 1000 @ 1A 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1.5V.A VCE saturation (Max) of 1.5V @ 1mA, 1A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at -2A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 8V.This device has a current rating of -2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 50MHz.A breakdown input voltage of 100V volts can be used.A maximum collector current of 2A volts is possible.
2SB1316TL Features
the DC current gain for this device is 1000 @ 1A 2V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 1mA, 1A
the emitter base voltage is kept at 8V
the current rating of this device is -2A
a transition frequency of 50MHz
2SB1316TL Applications
There are a lot of ROHM Semiconductor
2SB1316TL applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 1000 @ 1A 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1.5V.A VCE saturation (Max) of 1.5V @ 1mA, 1A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at -2A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 8V.This device has a current rating of -2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 50MHz.A breakdown input voltage of 100V volts can be used.A maximum collector current of 2A volts is possible.
2SB1316TL Features
the DC current gain for this device is 1000 @ 1A 2V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 1mA, 1A
the emitter base voltage is kept at 8V
the current rating of this device is -2A
a transition frequency of 50MHz
2SB1316TL Applications
There are a lot of ROHM Semiconductor
2SB1316TL applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2SB1316TL More Descriptions
Small Signal Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 2-Element, PNP, Silicon
2SB1316 Series 100 V 2 A SMT Darlington PNP Power Transistor - SC-63
Trans Darlington PNP 100V 2A 1000mW 3-Pin(2 Tab) CPT T/R
ROHM 2SB1316TL PNP Darlington Transistor, 2 A 100 V HFE:1000, 3-Pin SC-63 | ROHM Semiconductor 2SB1316TL
TRANSISTOR D-PAK; BCE PNP;DARL; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:100V; Power Dissipation Pd:1W; DC Collector Current:-1A; DC Current Gain hFE:1000; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Av Current Ic:2A; Collector Emitter Voltage Vces:1.5V; Current Ic Continuous a Max:-1A; Gain Bandwidth ft Typ:50MHz; Hfe Min:1000; Package / Case:D-PAK; Power Dissipation Pd:1W; Termination Type:SMD; Transistor Type:Power Darlington; Voltage Vcbo:100V
TRANSISTOR D-PAK; BCE PNP;DARL,; Transistor Type:Power Darlington; Transistor Polarity:PNP; Collector-to-Emitter Breakdown Voltage:100V; Current Ic Continuous a Max:-1A; Voltage, Vce Sat Max:1.5V; Power Dissipation:1W; Min Hfe:1000;;RoHS Compliant: Yes
2SB1316 Series 100 V 2 A SMT Darlington PNP Power Transistor - SC-63
Trans Darlington PNP 100V 2A 1000mW 3-Pin(2 Tab) CPT T/R
ROHM 2SB1316TL PNP Darlington Transistor, 2 A 100 V HFE:1000, 3-Pin SC-63 | ROHM Semiconductor 2SB1316TL
TRANSISTOR D-PAK; BCE PNP;DARL; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:100V; Power Dissipation Pd:1W; DC Collector Current:-1A; DC Current Gain hFE:1000; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Av Current Ic:2A; Collector Emitter Voltage Vces:1.5V; Current Ic Continuous a Max:-1A; Gain Bandwidth ft Typ:50MHz; Hfe Min:1000; Package / Case:D-PAK; Power Dissipation Pd:1W; Termination Type:SMD; Transistor Type:Power Darlington; Voltage Vcbo:100V
TRANSISTOR D-PAK; BCE PNP;DARL,; Transistor Type:Power Darlington; Transistor Polarity:PNP; Collector-to-Emitter Breakdown Voltage:100V; Current Ic Continuous a Max:-1A; Voltage, Vce Sat Max:1.5V; Power Dissipation:1W; Min Hfe:1000;;RoHS Compliant: Yes
The three parts on the right have similar specifications to 2SB1316TL.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeTerminal FinishAdditional FeatureHTS CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeNumber of ElementsPolarityVoltageElement ConfigurationCurrentPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackagePower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionQualification StatusPolarity/Channel TypeLifecycle StatusSurface MountFrequencyView Compare
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2SB1316TL20 WeeksCopper, TinSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633SILICON150°C TJTape & Reel (TR)2004e2yesActive1 (Unlimited)2SMD/SMTEAR99Tin/Copper (Sn98Cu2)BUILT-IN BIAS RESISTOR8541.29.00.75Other Transistors-100V10WGULL WING260-2A102SB13163R-PSSO-G22PNP100VSingle2A1WCOLLECTORAMPLIFIER50MHzPNP - Darlington100V2A1000 @ 1A 2V10μA ICBO1.5V @ 1mA, 1A100V50MHz1.5V100V100V8V1000-2A2.3mm6.5mm5.5mmNo SVHCNoROHS3 CompliantLead Free-----------
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--Surface MountSurface MountSC-8585-150°C TJTape & Reel (TR)2007--Obsolete1 (Unlimited)--------150mW----2SB1218-----------PNP500mV100mA290 @ 2mA 10V100μA500mV @ 10mA, 100mA45V--45V---------RoHS Compliant-SMini3-F2150mW45V100mA80MHz-----
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--Through HoleThrough HoleATV-SILICON150°C TJTape & Box (TB)2004e1-Obsolete1 (Unlimited)3-EAR99TIN SILVER COPPER--Other Transistors-160V1W-260-1.5A10-3R-PSIP-T31--Single---SWITCHING50MHzPNP2V1.5A82 @ 100mA 5V1μA ICBO2V @ 100mA, 1A160V50MHz---160V5V82------ROHS3 CompliantLead Free---1.5A-Not QualifiedPNP---
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7 Weeks--Surface MountTO-252-3, DPak (2 Leads Tab), SC-633-150°C TJTape & Reel (TR)2011e6yesActive1 (Unlimited)--EAR99Tin/Bismuth (Sn/Bi)--Other Transistors-1W----2SB12153-1--Single-1W--130MHzPNP100V3A140 @ 500mA 5V1μA ICBO500mV @ 150mA, 1.5A100V--200mV-120V-6V------NoROHS3 CompliantLead Free------PNPACTIVE (Last Updated: 5 days ago)YES130MHz
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