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2SB1205T-E

ON Semiconductor 2SB1205T-E

Part Number:
2SB1205T-E
Manufacturer:
ON Semiconductor
Ventron No:
3813571-2SB1205T-E
Description:
TRANS PNP 20V 5A TP
ECAD Model:
Datasheet:
2SB1205T-E

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Specifications
ON Semiconductor 2SB1205T-E technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2SB1205T-E.
  • Factory Lead Time
    2 Weeks
  • Mounting Type
    Through Hole
  • Package / Case
    TO-251-3 Short Leads, IPak, TO-251AA
  • Surface Mount
    NO
  • Number of Pins
    3
  • Operating Temperature
    150°C TJ
  • Packaging
    Bulk
  • Published
    2013
  • JESD-609 Code
    e6
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Bismuth (Sn/Bi)
  • Subcategory
    Other Transistors
  • Max Power Dissipation
    1W
  • Base Part Number
    2SB1205
  • Element Configuration
    Single
  • Gain Bandwidth Product
    320MHz
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    -500mV
  • Max Collector Current
    5A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    200 @ 500mA 2V
  • Current - Collector Cutoff (Max)
    500nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    500mV @ 60mA, 3A
  • Collector Emitter Breakdown Voltage
    20V
  • Current - Collector (Ic) (Max)
    5A
  • Collector Emitter Saturation Voltage
    -250mV
  • Collector Base Voltage (VCBO)
    -25V
  • Emitter Base Voltage (VEBO)
    -5V
  • hFE Min
    200
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
2SB1205T-E Overview
In this device, the DC current gain is 200 @ 500mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -250mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 60mA, 3A.Keeping the emitter base voltage at -5V allows for a high level of efficiency.Maximum collector currents can be below 5A volts.

2SB1205T-E Features
the DC current gain for this device is 200 @ 500mA 2V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 500mV @ 60mA, 3A
the emitter base voltage is kept at -5V


2SB1205T-E Applications
There are a lot of ON Semiconductor
2SB1205T-E applications of single BJT transistors.


Inverter
Interface
Driver
Muting
2SB1205T-E More Descriptions
Small Signal Bipolar Transistor, 5A I(C), 1-Element, PNP
Trans GP BJT PNP 20V 5A 1000mW 3-Pin(3 Tab) TP T/R
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Product Comparison
The three parts on the right have similar specifications to 2SB1205T-E.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    ECCN Code
    Terminal Finish
    Subcategory
    Max Power Dissipation
    Base Part Number
    Element Configuration
    Gain Bandwidth Product
    Polarity/Channel Type
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Current - Collector (Ic) (Max)
    Collector Emitter Saturation Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    RoHS Status
    Lead Free
    Lifecycle Status
    Pbfree Code
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Configuration
    Max Breakdown Voltage
    Frequency - Transition
    Mount
    Supplier Device Package
    Power - Max
    Voltage - Collector Emitter Breakdown (Max)
    Frequency
    Number of Elements
    Power Dissipation
    Radiation Hardening
    View Compare
  • 2SB1205T-E
    2SB1205T-E
    ON Semiconductor
    2 Weeks
    Through Hole
    TO-251-3 Short Leads, IPak, TO-251AA
    NO
    3
    150°C TJ
    Bulk
    2013
    e6
    Active
    1 (Unlimited)
    EAR99
    Tin/Bismuth (Sn/Bi)
    Other Transistors
    1W
    2SB1205
    Single
    320MHz
    PNP
    PNP
    -500mV
    5A
    200 @ 500mA 2V
    500nA ICBO
    500mV @ 60mA, 3A
    20V
    5A
    -250mV
    -25V
    -5V
    200
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • 2SB1202S-E
    2SB1202S-E
    ON Semiconductor
    2 Weeks
    Through Hole
    TO-251-3 Short Leads, IPak, TO-251AA
    NO
    3
    150°C TJ
    Bulk
    2000
    e6
    Active
    1 (Unlimited)
    EAR99
    Tin/Bismuth (Sn/Bi)
    Other Transistors
    1W
    2SB1202
    -
    -
    PNP
    PNP
    50V
    5A
    140 @ 100mA 2V
    1μA ICBO
    700mV @ 100mA, 2A
    50V
    3A
    -
    60V
    -6V
    100
    ROHS3 Compliant
    Lead Free
    ACTIVE (Last Updated: 1 day ago)
    yes
    NOT SPECIFIED
    NOT SPECIFIED
    3
    Single
    50V
    150MHz
    -
    -
    -
    -
    -
    -
    -
    -
    2SB1205T-E vs 2SB1202S-E
  • 2SB1218GSL
    2SB1218GSL
    Panasonic Electronic Components
    -
    Surface Mount
    SC-85
    -
    85
    150°C TJ
    Tape & Reel (TR)
    2007
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    150mW
    2SB1218
    -
    -
    -
    PNP
    500mV
    100mA
    290 @ 2mA 10V
    100μA
    500mV @ 10mA, 100mA
    45V
    100mA
    -
    -
    -
    -
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    45V
    80MHz
    Surface Mount
    SMini3-F2
    150mW
    45V
    -
    -
    -
    -
    2SB1205T-E vs 2SB1218GSL
  • 2SB1215S-TL-E
    2SB1215S-TL-E
    ON Semiconductor
    7 Weeks
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    YES
    3
    150°C TJ
    Tape & Reel (TR)
    2011
    e6
    Active
    1 (Unlimited)
    EAR99
    Tin/Bismuth (Sn/Bi)
    Other Transistors
    1W
    2SB1215
    Single
    130MHz
    PNP
    PNP
    100V
    3A
    140 @ 500mA 5V
    1μA ICBO
    500mV @ 150mA, 1.5A
    100V
    -
    -200mV
    120V
    -6V
    -
    ROHS3 Compliant
    Lead Free
    ACTIVE (Last Updated: 5 days ago)
    yes
    -
    -
    3
    -
    -
    -
    -
    -
    -
    -
    130MHz
    1
    1W
    No
    2SB1205T-E vs 2SB1215S-TL-E
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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