Rohm Semiconductor 2SB1198KT146R
- Part Number:
- 2SB1198KT146R
- Manufacturer:
- Rohm Semiconductor
- Ventron No:
- 3068907-2SB1198KT146R
- Description:
- TRANS PNP 80V 0.5A SOT-346
- Datasheet:
- 2SB1198KT146R
Rohm Semiconductor 2SB1198KT146R technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor 2SB1198KT146R.
- Factory Lead Time13 Weeks
- Contact PlatingCopper, Silver, Tin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published1998
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- HTS Code8541.21.00.75
- SubcategoryOther Transistors
- Voltage - Rated DC-80V
- Max Power Dissipation200mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-500mA
- Time@Peak Reflow Temperature-Max (s)10
- Base Part Number2SB1198
- Number of Elements1
- Element ConfigurationSingle
- Power - Max200mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product180MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)500mV
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce180 @ 100mA 3V
- Current - Collector Cutoff (Max)500nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage80V
- Transition Frequency180MHz
- Collector Emitter Saturation Voltage-200mV
- Max Breakdown Voltage80V
- Collector Base Voltage (VCBO)-80V
- Emitter Base Voltage (VEBO)-5V
- hFE Min120
- Continuous Collector Current-500mA
- VCEsat-Max0.5 V
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2SB1198KT146R Overview
This device has a DC current gain of 180 @ 100mA 3V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -200mV.A VCE saturation (Max) of 500mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at -500mA to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 180MHz.A breakdown input voltage of 80V volts can be used.A maximum collector current of 500mA volts is possible.
2SB1198KT146R Features
the DC current gain for this device is 180 @ 100mA 3V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -500mA
a transition frequency of 180MHz
2SB1198KT146R Applications
There are a lot of ROHM Semiconductor
2SB1198KT146R applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 180 @ 100mA 3V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -200mV.A VCE saturation (Max) of 500mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at -500mA to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 180MHz.A breakdown input voltage of 80V volts can be used.A maximum collector current of 500mA volts is possible.
2SB1198KT146R Features
the DC current gain for this device is 180 @ 100mA 3V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -500mA
a transition frequency of 180MHz
2SB1198KT146R Applications
There are a lot of ROHM Semiconductor
2SB1198KT146R applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2SB1198KT146R More Descriptions
80V 200mW 180@100mA,3V 500mA PNP SOT-23-3L Bipolar Transistors - BJT ROHS
2SB1198K Series 80 V 500 mA 200 mW Surface Mount PNP Transistor - SOT-89
Trans GP BJT PNP 80V 0.5A 3-Pin SMT T/R / TRANS PNP 80V 0.5A SOT-346
Transistors - Bipolar (BJT) - Single TO-236-3, SC-59, SOT-23-3 1 (Unlimited) Tape & Reel (TR) Surface Mount PNP 180 @ 100mA 3V 500mV @ 50mA, 500mA 150°C TJ 500nA ICBO TRANS PNP 80V 0.5A SOT-346
2SB1198K Series 80 V 500 mA 200 mW Surface Mount PNP Transistor - SOT-89
Trans GP BJT PNP 80V 0.5A 3-Pin SMT T/R / TRANS PNP 80V 0.5A SOT-346
Transistors - Bipolar (BJT) - Single TO-236-3, SC-59, SOT-23-3 1 (Unlimited) Tape & Reel (TR) Surface Mount PNP 180 @ 100mA 3V 500mV @ 50mA, 500mA 150°C TJ 500nA ICBO TRANS PNP 80V 0.5A SOT-346
The three parts on the right have similar specifications to 2SB1198KT146R.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishHTS CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberNumber of ElementsElement ConfigurationPower - MaxTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentVCEsat-MaxRadiation HardeningRoHS StatusLead FreeLifecycle StatusReach Compliance CodePin CountFrequency - TransitionSupplier Device PackageVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)View Compare
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2SB1198KT146R13 WeeksCopper, Silver, TinSurface MountSurface MountTO-236-3, SC-59, SOT-23-33SILICON150°C TJTape & Reel (TR)1998e1yesActive1 (Unlimited)3EAR99Tin/Silver/Copper (Sn/Ag/Cu)8541.21.00.75Other Transistors-80V200mWDUALGULL WING260-500mA102SB11981Single200mWSWITCHING180MHzPNPPNP500mV500mA180 @ 100mA 3V500nA ICBO500mV @ 50mA, 500mA80V180MHz-200mV80V-80V-5V120-500mA0.5 VNoROHS3 CompliantLead Free--------
-
2 Weeks--Through HoleTO-251-3 Short Leads, IPak, TO-251AA3-150°C TJBulk1999e6yesActive1 (Unlimited)-EAR99Tin/Bismuth (Sn/Bi)---1W-----2SB1203--1W---PNP50V5A140 @ 500mA 2V1μA ICBO550mV @ 150mA, 3A50V---60V-6V70---ROHS3 CompliantLead FreeACTIVE (Last Updated: 1 week ago)not_compliant3130MHz---
-
--Surface MountSurface MountSC-70, SOT-323--150°C TJTape & Reel (TR)2000--Obsolete1 (Unlimited)------50V150mW----500mA-2SB1219--150mW---PNP600mV500mA170 @ 150mA 10V100nA ICBO600mV @ 30mA, 300mA50V--50V------RoHS Compliant----200MHzSMini3-G150V500mA
-
2 Weeks--Surface MountTO-252-3, DPak (2 Leads Tab), SC-633-150°C TJBulk2012e6yesActive1 (Unlimited)-EAR99Tin/Bismuth (Sn/Bi)---800mW-----2SB1201--800mW---PNP50V2A140 @ 100mA 2V100nA ICBO700mV @ 50mA, 1A50V---60V-6V100---ROHS3 CompliantLead FreeACTIVE (Last Updated: 1 week ago)-3150MHz---
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