Rohm Semiconductor 2SB1197KT146Q
- Part Number:
- 2SB1197KT146Q
- Manufacturer:
- Rohm Semiconductor
- Ventron No:
- 3553813-2SB1197KT146Q
- Description:
- TRANS PNP 32V 0.8A SOT-346
- Datasheet:
- 2SB1197KT146Q
Rohm Semiconductor 2SB1197KT146Q technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor 2SB1197KT146Q.
- Factory Lead Time13 Weeks
- Contact PlatingCopper, Silver, Tin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2008
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- HTS Code8541.21.00.75
- SubcategoryOther Transistors
- Voltage - Rated DC-32V
- Max Power Dissipation200mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-800mA
- Time@Peak Reflow Temperature-Max (s)10
- Base Part Number2SB1197
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power - Max200mW
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product200MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)500mV
- Max Collector Current800mA
- DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 100mA 3V
- Current - Collector Cutoff (Max)500nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage32V
- Transition Frequency200MHz
- Max Breakdown Voltage32V
- Collector Base Voltage (VCBO)-40V
- Emitter Base Voltage (VEBO)-5V
- hFE Min120
- Continuous Collector Current-800mA
- VCEsat-Max0.5 V
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2SB1197KT146Q Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 100mA 3V.When VCE saturation is 500mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at -800mA for high efficiency.Emitter base voltages of -5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -800mA.In the part, the transition frequency is 200MHz.This device can take an input voltage of 32V volts before it breaks down.A maximum collector current of 800mA volts can be achieved.
2SB1197KT146Q Features
the DC current gain for this device is 120 @ 100mA 3V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -800mA
a transition frequency of 200MHz
2SB1197KT146Q Applications
There are a lot of ROHM Semiconductor
2SB1197KT146Q applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 100mA 3V.When VCE saturation is 500mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at -800mA for high efficiency.Emitter base voltages of -5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -800mA.In the part, the transition frequency is 200MHz.This device can take an input voltage of 32V volts before it breaks down.A maximum collector current of 800mA volts can be achieved.
2SB1197KT146Q Features
the DC current gain for this device is 120 @ 100mA 3V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -800mA
a transition frequency of 200MHz
2SB1197KT146Q Applications
There are a lot of ROHM Semiconductor
2SB1197KT146Q applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2SB1197KT146Q More Descriptions
2SB1197K Series 32 V 0.8 A SMT PNP Low Frequency Transistor - SC-59
Trans GP BJT PNP 32V 0.8A 200mW 3-Pin SMT T/R
PNP TRANSISTOR 32V 0,8A SMT3 RoHSconf
Transistor,pnp,32V,0.8A,sot-346; Transistor Polarity:Pnp; Collector Emitter Voltage V(Br)Ceo:-32V; Transition Frequency Ft:200Mhz; Power Dissipation Pd:200Mw; Dc Collector Current:-800Ma; Dc Current Gain Hfe:120Hfe; Transistor Case Rohs Compliant: Yes |Rohm 2SB1197KT146Q
Trans GP BJT PNP 32V 0.8A 200mW 3-Pin SMT T/R
PNP TRANSISTOR 32V 0,8A SMT3 RoHSconf
Transistor,pnp,32V,0.8A,sot-346; Transistor Polarity:Pnp; Collector Emitter Voltage V(Br)Ceo:-32V; Transition Frequency Ft:200Mhz; Power Dissipation Pd:200Mw; Dc Collector Current:-800Ma; Dc Current Gain Hfe:120Hfe; Transistor Case Rohs Compliant: Yes |Rohm 2SB1197KT146Q
The three parts on the right have similar specifications to 2SB1197KT146Q.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishHTS CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower - MaxTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentVCEsat-MaxREACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackageVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionJESD-30 CodeCase ConnectionReach Compliance CodeQualification StatusCollector Emitter Saturation VoltageView Compare
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2SB1197KT146Q13 WeeksCopper, Silver, TinSurface MountSurface MountTO-236-3, SC-59, SOT-23-33SILICON150°C TJTape & Reel (TR)2008e1yesActive1 (Unlimited)3EAR99Tin/Silver/Copper (Sn/Ag/Cu)8541.21.00.75Other Transistors-32V200mWDUALGULL WING260-800mA102SB119731Single200mWAMPLIFIER200MHzPNPPNP500mV800mA120 @ 100mA 3V500nA ICBO500mV @ 50mA, 500mA32V200MHz32V-40V-5V120-800mA0.5 VNo SVHCNoROHS3 CompliantLead Free----------
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--Surface MountSurface MountSC-8585-150°C TJTape & Reel (TR)2007--Obsolete1 (Unlimited)------150mW-----2SB1218---150mW---PNP500mV100mA290 @ 2mA 10V100μA500mV @ 10mA, 100mA45V-45V-------RoHS Compliant-SMini3-F245V100mA80MHz-----
-
10 WeeksCopper, TinSurface MountSurface MountTO-243AA4SILICON150°C TJTape & Reel (TR)1999e2yesNot For New Designs1 (Unlimited)3-TIN COPPER-Other Transistors-80V2W-FLAT260-1A102SB126031Single-SWITCHING100MHzPNPPNP80V1A82 @ 100mA 3V1μA ICBO400mV @ 50mA, 500mA80V100MHz--80V5V82-1A--NoROHS3 CompliantLead Free--1A-R-PSSO-F3COLLECTOR---
-
--Through HoleThrough Hole3-SIP-SILICON150°C TJTape & Box (TB)2004--Obsolete1 (Unlimited)3EAR99--Other Transistors-32V1W--NOT SPECIFIED-1ANOT SPECIFIED--1Single-SWITCHING150MHzPNPPNP500mV1A180 @ 100mA 3V500nA ICBO500mV @ 50mA, 500mA32V150MHz--40V-5V120----ROHS3 CompliantLead Free--1A-R-PSIP-T3-unknownNot Qualified-200mV
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