Rohm Semiconductor 2SB1188T100R

Name: 2SB1188T100R
Brand: Rohm Semiconductor
SKU: 2462895-2SB1188T100R
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: 2SB1188T100R

Manufacturer:: Rohm Semiconductor

Ventron No:: 2462895-2SB1188T100R

Description:: TRANS PNP 32V 2A SO-89

ECAD Model:

Datasheet:: 2SB1188,1182,1240

Specifications

Rohm Semiconductor 2SB1188T100R technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor 2SB1188T100R.

Contact Plating
Copper, Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
1997
JESD-609 Code
e2
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
TIN COPPER
Subcategory
Other Transistors
Voltage - Rated DC
-32V
Max Power Dissipation
500mW
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Current Rating
-2A
Frequency
100MHz
Time@Peak Reflow Temperature-Max (s)
10
Base Part Number
2SB1188
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
2W
Case Connection
COLLECTOR
Transistor Application
AMPLIFIER
Gain Bandwidth Product
100MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
32V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
180 @ 500mA 3V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
800mV @ 200mA, 2A
Collector Emitter Breakdown Voltage
-32V
Transition Frequency
100MHz
Max Breakdown Voltage
32V
Collector Base Voltage (VCBO)
40V
Emitter Base Voltage (VEBO)
-5V
hFE Min
82
VCEsat-Max
0.8 V
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

2SB1188T100R Overview
In this device, the DC current gain is 180 @ 500mA 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 800mV @ 200mA, 2A.Keeping the emitter base voltage at -5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-2A).100MHz is present in the transition frequency.An input voltage of 32V volts is the breakdown voltage.Maximum collector currents can be below 2A volts.

2SB1188T100R Features
the DC current gain for this device is 180 @ 500mA 3V
the vce saturation(Max) is 800mV @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -2A
a transition frequency of 100MHz

2SB1188T100R Applications
There are a lot of ROHM Semiconductor
2SB1188T100R applications of single BJT transistors.

Inverter
Interface
Driver
Muting

2SB1188T100R More Descriptions

32V 2W 180@500mA,3V 2A PNP SOT-89 Bipolar Transistors - BJT ROHS
2SB1188 Series 32 V 2 A SMT PNP Medium Power Transistor - SC-62
Trans GP BJT PNP 32V 2A 2000mW 4-Pin(3 Tab) MPT T/R
TRANSISTOR,PNP,32V,2A,SO-89; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -32V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 500mW; DC Collector Current: -2A; DC Current Gain hFE: 82hFE; Transistor Case Style: SOT-89; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Gain Bandwidth ft Typ: 100MHz

Product Comparison

The three parts on the right have similar specifications to 2SB1188T100R.

Image

Part Number

Manufacturer

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Voltage - Rated DC

Max Power Dissipation

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Frequency

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Number of Elements

Element Configuration

Power Dissipation

Case Connection

Transistor Application

Gain Bandwidth Product

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Max Breakdown Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

VCEsat-Max

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Lifecycle Status

Factory Lead Time

Pbfree Code

Reach Compliance Code

Power - Max

Frequency - Transition

Surface Mount

Configuration

Current - Collector (Ic) (Max)

View Compare
2SB1188T100R

Rohm Semiconductor

Copper, Tin

Surface Mount

Surface Mount

TO-243AA

3

SILICON

150°C TJ

Tape & Reel (TR)

1997

e2

Not For New Designs

1 (Unlimited)

3

EAR99

TIN COPPER

Other Transistors

-32V

500mW

FLAT

260

-2A

100MHz

10

2SB1188

3

1

Single

2W

COLLECTOR

AMPLIFIER

100MHz

PNP

PNP

32V

2A

180 @ 500mA 3V

1μA ICBO

800mV @ 200mA, 2A

-32V

100MHz

32V

40V

-5V

82

0.8 V

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-
2SB1203S-E

ON Semiconductor

-

-

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

3

-

150°C TJ

Bulk

1999

e6

Active

1 (Unlimited)

-

EAR99

Tin/Bismuth (Sn/Bi)

-

-

1W

-

-

-

-

-

2SB1203

3

-

-

-

-

-

-

-

PNP

50V

5A

140 @ 500mA 2V

1μA ICBO

550mV @ 150mA, 3A

50V

-

-

60V

-6V

70

-

-

-

ROHS3 Compliant

Lead Free

ACTIVE (Last Updated: 1 week ago)

2 Weeks

yes

not_compliant

1W

130MHz

-

-

-

2SB1188T100R vs 2SB1203S-E
2SB1202S-E

ON Semiconductor

-

-

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

3

-

150°C TJ

Bulk

2000

e6

Active

1 (Unlimited)

-

EAR99

Tin/Bismuth (Sn/Bi)

Other Transistors

-

1W

-

NOT SPECIFIED

-

-

NOT SPECIFIED

2SB1202

3

-

-

-

-

-

-

PNP

PNP

50V

5A

140 @ 100mA 2V

1μA ICBO

700mV @ 100mA, 2A

50V

-

50V

60V

-6V

100

-

-

-

ROHS3 Compliant

Lead Free

ACTIVE (Last Updated: 1 day ago)

2 Weeks

yes

-

-

150MHz

NO

Single

3A

2SB1188T100R vs 2SB1202S-E
2SB1201S-E

ON Semiconductor

-

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

-

150°C TJ

Bulk

2012

e6

Active

1 (Unlimited)

-

EAR99

Tin/Bismuth (Sn/Bi)

-

-

800mW

-

-

-

-

-

2SB1201

3

-

-

-

-

-

-

-

PNP

50V

2A

140 @ 100mA 2V

100nA ICBO

700mV @ 50mA, 1A

50V

-

-

60V

-6V

100

-

-

-

ROHS3 Compliant

Lead Free

ACTIVE (Last Updated: 1 week ago)

2 Weeks

yes

-

800mW

150MHz

-

-

-

2SB1188T100R vs 2SB1201S-E