Rohm Semiconductor 2SB1132T100Q

Name: 2SB1132T100Q
Brand: Rohm Semiconductor
SKU: 3813424-2SB1132T100Q
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: 2SB1132T100Q

Manufacturer:: Rohm Semiconductor

Ventron No:: 3813424-2SB1132T100Q

Description:: TRANS PNP 32V 1A SO-89

ECAD Model:

Datasheet:: 2SB1132,2SA1515S,2SB1237

Specifications

Rohm Semiconductor 2SB1132T100Q technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor 2SB1132T100Q.

Contact Plating
Copper, Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
JESD-609 Code
e2
Pbfree Code
yes
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
TIN COPPER
Subcategory
Other Transistors
Voltage - Rated DC
-32V
Max Power Dissipation
2W
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Current Rating
-1A
Frequency
150MHz
Time@Peak Reflow Temperature-Max (s)
10
Base Part Number
2SB1132
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
2W
Case Connection
COLLECTOR
Transistor Application
AMPLIFIER
Gain Bandwidth Product
150MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
32V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 100mA 3V
Current - Collector Cutoff (Max)
500nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
32V
Transition Frequency
150MHz
Max Breakdown Voltage
32V
Collector Base Voltage (VCBO)
40V
Emitter Base Voltage (VEBO)
-5V
hFE Min
82
Continuous Collector Current
-1A
VCEsat-Max
0.5 V
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

2SB1132T100Q Overview
This device has a DC current gain of 120 @ 100mA 3V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of -1A is necessary for high efficiency.The base voltage of the emitter can be kept at -5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -1A.In this part, there is a transition frequency of 150MHz.As a result, it can handle voltages as low as 32V volts.The maximum collector current is 1A volts.

2SB1132T100Q Features
the DC current gain for this device is 120 @ 100mA 3V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -1A
a transition frequency of 150MHz

2SB1132T100Q Applications
There are a lot of ROHM Semiconductor
2SB1132T100Q applications of single BJT transistors.

Inverter
Interface
Driver
Muting

2SB1132T100Q More Descriptions

Small Signal Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon
2SB1132 Series 32 V 1 A SMT PNP Medium Power Transistor - SC-62
Trans GP BJT PNP 32V 1A 2000mW 4-Pin(3 Tab) MPT T/R
TRANSISTOR,PNP,32V,1A,SO-89; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-32V; Power Dissipation Pd:500mW; DC Collector Current:-1A; DC Current Gain hFE:82; Transistor Case Style:SOT-89; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Gain Bandwidth ft Typ:150MHz

Product Comparison

The three parts on the right have similar specifications to 2SB1132T100Q.

Image

Part Number

Manufacturer

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Voltage - Rated DC

Max Power Dissipation

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Frequency

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Number of Elements

Element Configuration

Power Dissipation

Case Connection

Transistor Application

Gain Bandwidth Product

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Max Breakdown Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Continuous Collector Current

VCEsat-Max

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Supplier Device Package

Power - Max

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Frequency - Transition

Factory Lead Time

JESD-30 Code

Lifecycle Status

Surface Mount

Collector Emitter Saturation Voltage

View Compare
2SB1132T100Q

Rohm Semiconductor

Copper, Tin

Surface Mount

Surface Mount

TO-243AA

3

SILICON

150°C TJ

Tape & Reel (TR)

2009

e2

yes

Not For New Designs

1 (Unlimited)

3

EAR99

TIN COPPER

Other Transistors

-32V

2W

FLAT

260

-1A

150MHz

10

2SB1132

3

1

Single

2W

COLLECTOR

AMPLIFIER

150MHz

PNP

PNP

32V

1A

120 @ 100mA 3V

500nA ICBO

500mV @ 50mA, 500mA

32V

150MHz

32V

40V

-5V

82

-1A

0.5 V

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-
2SB1218GSL

Panasonic Electronic Components

-

Surface Mount

Surface Mount

SC-85

85

-

150°C TJ

Tape & Reel (TR)

2007

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

150mW

-

-

-

-

-

2SB1218

-

-

-

-

-

-

-

-

PNP

500mV

100mA

290 @ 2mA 10V

100μA

500mV @ 10mA, 100mA

45V

-

45V

-

-

-

-

-

-

-

RoHS Compliant

-

SMini3-F2

150mW

45V

100mA

80MHz

-

-

-

-

-

2SB1132T100Q vs 2SB1218GSL
2SB1260T100P

Rohm Semiconductor

Copper, Tin

Surface Mount

Surface Mount

TO-243AA

4

SILICON

150°C TJ

Tape & Reel (TR)

1999

e2

yes

Not For New Designs

1 (Unlimited)

3

-

TIN COPPER

Other Transistors

-80V

2W

FLAT

260

-1A

-

10

2SB1260

3

1

Single

-

COLLECTOR

SWITCHING

100MHz

PNP

PNP

80V

1A

82 @ 100mA 3V

1μA ICBO

400mV @ 50mA, 500mA

80V

100MHz

-

-80V

5V

82

-1A

-

-

No

ROHS3 Compliant

Lead Free

-

-

-

1A

-

10 Weeks

R-PSSO-F3

-

-

-

2SB1132T100Q vs 2SB1260T100P
2SB1215S-TL-E

ON Semiconductor

-

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

-

150°C TJ

Tape & Reel (TR)

2011

e6

yes

Active

1 (Unlimited)

-

EAR99

Tin/Bismuth (Sn/Bi)

Other Transistors

-

1W

-

-

-

130MHz

-

2SB1215

3

1

Single

1W

-

-

130MHz

PNP

PNP

100V

3A

140 @ 500mA 5V

1μA ICBO

500mV @ 150mA, 1.5A

100V

-

-

120V

-6V

-

-

-

-

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

7 Weeks

-

ACTIVE (Last Updated: 5 days ago)

YES

-200mV

2SB1132T100Q vs 2SB1215S-TL-E