ON Semiconductor 2SB1122S-TD-E

Name: 2SB1122S-TD-E
Brand: ON Semiconductor
SKU: 2845348-2SB1122S-TD-E
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: 2SB1122S-TD-E

Manufacturer:: ON Semiconductor

Ventron No:: 2845348-2SB1122S-TD-E

Description:: TRANS PNP 50V 1A SOT89-3

ECAD Model:

Datasheet:: 2SB1122S-TD-E

Specifications

ON Semiconductor 2SB1122S-TD-E technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2SB1122S-TD-E.

Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
Factory Lead Time
2 Weeks
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
TO-243AA
Surface Mount
YES
Number of Pins
3
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2010
JESD-609 Code
e6
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
500mW
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Frequency
150MHz
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
500mW
Gain Bandwidth Product
150MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
50V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 100mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
50V
Collector Emitter Saturation Voltage
-180mV
Max Breakdown Voltage
50V
Collector Base Voltage (VCBO)
-60V
Emitter Base Voltage (VEBO)
5V
hFE Min
140
Height
1.5mm
Length
4.5mm
Width
2.5mm
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

2SB1122S-TD-E Overview
In this device, the DC current gain is 100 @ 100mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -180mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Input voltage breakdown is available at 50V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.

2SB1122S-TD-E Features
the DC current gain for this device is 100 @ 100mA 2V
a collector emitter saturation voltage of -180mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V

2SB1122S-TD-E Applications
There are a lot of ON Semiconductor
2SB1122S-TD-E applications of single BJT transistors.

Inverter
Interface
Driver
Muting

2SB1122S-TD-E More Descriptions

ON Semi 2SB1122S-TD-E PNP Bipolar Transistor; 1 A; 50 V; 3-Pin PCP
Bipolar Transistor, -50V, -1A, Low VCE(sat) PNP Single PCP
Trans GP BJT PNP 50V 1A 4-Pin(3 Tab) PCP T/R - Tape and Reel
Small Signal Bipolar Transistor, 1A I(C), 1-Element, PNP
TRANSISTOR, PNP, 50V, 1A, SOT89; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-50V; Typ Gain Bandwidth ft:150MHz; Power Dissipation Pd:500mW; DC Collector Current:-1A; DC Current Gain hFE:280; Transistor Case Style:SOT-89; No. of Pins:3

Product Comparison

The three parts on the right have similar specifications to 2SB1122S-TD-E.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mounting Type

Package / Case

Surface Mount

Number of Pins

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

ECCN Code

Subcategory

Max Power Dissipation

Peak Reflow Temperature (Cel)

Frequency

Time@Peak Reflow Temperature-Max (s)

Pin Count

Number of Elements

Element Configuration

Power Dissipation

Gain Bandwidth Product

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Collector Emitter Saturation Voltage

Max Breakdown Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Height

Length

Width

RoHS Status

Lead Free

Mount

Supplier Device Package

Voltage - Rated DC

Current Rating

Base Part Number

Power - Max

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Frequency - Transition

Terminal Finish

Radiation Hardening

View Compare
2SB1122S-TD-E

ON Semiconductor

ACTIVE (Last Updated: 4 days ago)

2 Weeks

Tin

Surface Mount

TO-243AA

YES

3

150°C TJ

Tape & Reel (TR)

2010

e6

yes

Active

1 (Unlimited)

EAR99

Other Transistors

500mW

NOT SPECIFIED

150MHz

NOT SPECIFIED

3

1

Single

500mW

150MHz

PNP

PNP

50V

1A

100 @ 100mA 2V

100nA ICBO

500mV @ 50mA, 500mA

50V

-180mV

50V

-60V

5V

140

1.5mm

4.5mm

2.5mm

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-
2SB1219ASL

Panasonic Electronic Components

-

-

-

Surface Mount

SC-70, SOT-323

-

-

150°C TJ

Tape & Reel (TR)

2000

-

-

Obsolete

1 (Unlimited)

-

-

150mW

-

-

-

-

-

-

-

-

-

PNP

600mV

500mA

170 @ 150mA 10V

100nA ICBO

600mV @ 30mA, 300mA

50V

-

50V

-

-

-

-

-

-

RoHS Compliant

-

Surface Mount

SMini3-G1

-50V

-500mA

2SB1219

150mW

50V

500mA

200MHz

-

-

2SB1122S-TD-E vs 2SB1219ASL
2SB1201S-E

ON Semiconductor

ACTIVE (Last Updated: 1 week ago)

2 Weeks

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

3

150°C TJ

Bulk

2012

e6

yes

Active

1 (Unlimited)

EAR99

-

800mW

-

-

-

3

-

-

-

-

-

PNP

50V

2A

140 @ 100mA 2V

100nA ICBO

700mV @ 50mA, 1A

50V

-

-

60V

-6V

100

-

-

-

ROHS3 Compliant

Lead Free

-

-

-

-

2SB1201

800mW

-

-

150MHz

Tin/Bismuth (Sn/Bi)

-

2SB1122S-TD-E vs 2SB1201S-E
2SB1215S-TL-E

ON Semiconductor

ACTIVE (Last Updated: 5 days ago)

7 Weeks

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

3

150°C TJ

Tape & Reel (TR)

2011

e6

yes

Active

1 (Unlimited)

EAR99

Other Transistors

1W

-

130MHz

-

3

1

Single

1W

130MHz

PNP

PNP

100V

3A

140 @ 500mA 5V

1μA ICBO

500mV @ 150mA, 1.5A

100V

-200mV

-

120V

-6V

-

-

-

-

ROHS3 Compliant

Lead Free

-

-

-

-

2SB1215

-

-

-

-

Tin/Bismuth (Sn/Bi)

No

2SB1122S-TD-E vs 2SB1215S-TL-E

Certification

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2SB1122S-TD-E Specification

Part Number	Manufacturers	Description	Stock	Price
2SB1122S-TD-E DISTI #	ON Semiconductor	Trans GP BJT PNP 50V 1A 4-Pin(3 Tab) SOT-89 T/R RoHS: Compliant	3000	1 $0.456 10 $0.3715 100 $0.227 500 $0.2043 1000 $0.1758 2000 $0.1501 5000 $0.1442 10000 $0.1328 25000 $0.127
2SB1122S-TD-E DISTI #	ON Semiconductor	Trans GP BJT PNP 50V 1A 4-Pin(3 Tab) SOT-89 T/R RoHS: Compliant	1000	1 $0.456 10 $0.3682 25 $0.3313 100 $0.2271 250 $0.2043 500 $0.1839 1000 $0.1726
2SB1122S-TD-E DISTI #	ON Semiconductor	TRANS PNP 50V 1A SOT89-3 RoHS: Compliant	1764	1 $0.51 10 $0.439 100 $0.328 500 $0.25768
2SB1122S-TD-E DISTI #	ON Semiconductor	TRANS PNP 50V 1A SOT89-3 RoHS: Compliant	1764	1 $0.51 10 $0.439 100 $0.328 500 $0.25768
2SB1122S-TD-E DISTI #	ON Semiconductor	TRANS PNP 50V 1A SOT89-3 RoHS: Compliant	1000	1000 $0.19332 2000 $0.17626 5000 $0.16489 10000 $0.15352 25000 $0.15162
2SB1122S-TD-E DISTI #	ON Semiconductor	Trans GP BJT PNP 50V 1A 4-Pin(3 Tab) SOT-89 T/R RoHS: Compliant	3000	71 $0.3715 100 $0.227 500 $0.2043 1000 $0.1758 2000 $0.1501
2SB1122S-TD-E DISTI #	ON Semiconductor	Trans GP BJT PNP 50V 1A 4-Pin(3 Tab) SOT-89 T/R RoHS: Compliant	1000	68 $0.3313 100 $0.2271 250 $0.2043 500 $0.1839 1000 $0.1726
2SB1122S-TD-E DISTI #	ON Semiconductor	Trans GP BJT PNP 50V 1A 4-Pin(3 Tab) PCP T/R - Tap RoHS: Compliant	0	5000 $0.1409 7000 $0.1399 12000 $0.1379 25000 $0.1369 50000 $0.1329
2SB1122S-TD-E DISTI #	ON Semiconductor	Trans GP BJT PNP 50V 1A 4-Pin(3 Tab) PCP T/R (Alt: RoHS: Compliant	0	3000 $0.2166 6000 $0.20827 9000 $0.20056 15000 $0.19339 30000 $0.18672 75000 $0.1805 150000 $0.17754
2SB1122S-TD-E DISTI #	ON Semiconductor	ON Semi 2SB1122S-TD-E PNP Bipolar Transistor, 1 A RoHS: Compliant	0	50 $0.126 125 $0.12 250 $0.114 500 $0.108
2SB1122S-TD-E DISTI #	ON Semiconductor	RoHS: Not Compliant	10000	1 $0.22 25 $0.2 100 $0.19 500 $0.19 1000 $0.18
2SB1122S-TD-E DISTI #	ON Semiconductor	Bipolar Transistors - BJT BIP PNP 1A 50V RoHS: Compliant	5815	1 $0.48 10 $0.391 100 $0.239 1000 $0.185 2000 $0.158 10000 $0.147 25000 $0.139 50000 $0.136
2SB1122T-TD-E DISTI #	ON Semiconductor	Bipolar Transistors - BJT BIP PNP 1A 50V RoHS: Compliant	4899	1 $0.44 10 $0.33 100 $0.179 1000 $0.134 2000 $0.116 10000 $0.108 25000 $0.099 50000 $0.096
2SB1122S-TD-E DISTI #	ON Semiconductor	TRANSISTOR PNP 50V 1A 150MHZ AMP PCP4, RL	2025	250 $0.211
2SB1122S-TD-E DISTI #	ON Semiconductor	TRANSISTOR, PNP, -50V, -1A, SOT-89 RoHS: Compliant	0	5 $0.635 25 $0.544 100 $0.371 250 $0.305 500 $0.25 1000 $0.231 5000 $0.218
2SB1122S-TD-E DISTI #	ON Semiconductor	Trans GP BJT PNP 50V 1A 4-Pin(3 Tab) PCP T/R RoHS: Compliant	45	10 $0.242
2SB1122S-TD-E DISTI #	ON Semiconductor	Trans GP BJT PNP 50V 1A 4-Pin(3 Tab) PCP T/R RoHS: Compliant	1000	25 $0.3313 100 $0.2271 250 $0.2043
2SB1122S-TD-E DISTI #	ON Semiconductor	TRANSISTOR, PNP, -50V, -1A, SOT-89 RoHS: Compliant	0	5 $0.335 25 $0.317 100 $0.181 250 $0.16 500 $0.14

2SB1122~~(8)~~
2SB112~~(55)~~
2SB11~~(120)~~
2SB1~~(92)~~
2SB~~(587)~~

ON Semiconductor 2SB1122S-TD-E

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