2SA2092TLQ

Rohm Semiconductor 2SA2092TLQ

Part Number:
2SA2092TLQ
Manufacturer:
Rohm Semiconductor
Ventron No:
3585319-2SA2092TLQ
Description:
TRANS PNP 60V 1A TSMD3
ECAD Model:
Datasheet:
2SA2092

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Specifications
Rohm Semiconductor 2SA2092TLQ technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor 2SA2092TLQ.
  • Contact Plating
    Copper, Silver, Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SC-96
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2004
  • JESD-609 Code
    e1
  • Pbfree Code
    yes
  • Part Status
    Not For New Designs
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -60V
  • Max Power Dissipation
    500mW
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Current Rating
    -1A
  • Pin Count
    3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Transistor Application
    SWITCHING
  • Gain Bandwidth Product
    300MHz
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    500mV
  • Max Collector Current
    1A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    120 @ 100mA 2V
  • Current - Collector Cutoff (Max)
    1μA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    500mV @ 50mA, 500mA
  • Collector Emitter Breakdown Voltage
    60V
  • Current - Collector (Ic) (Max)
    1A
  • Transition Frequency
    300MHz
  • Collector Emitter Saturation Voltage
    -200mV
  • Collector Base Voltage (VCBO)
    -60V
  • Emitter Base Voltage (VEBO)
    -6V
  • hFE Min
    120
  • Continuous Collector Current
    -1A
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
2SA2092TLQ Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 100mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -200mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 50mA, 500mA.Continuous collector voltages of -1A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -6V.Its current rating is -1A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 300MHz.During maximum operation, collector current can be as low as 1A volts.

2SA2092TLQ Features
the DC current gain for this device is 120 @ 100mA 2V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -6V
the current rating of this device is -1A
a transition frequency of 300MHz


2SA2092TLQ Applications
There are a lot of ROHM Semiconductor
2SA2092TLQ applications of single BJT transistors.


Inverter
Interface
Driver
Muting
2SA2092TLQ More Descriptions
Trans GP BJT PNP 60V 1A 3-Pin TSMT T/R
TRANS PNP 60V 1A TSMT3
OEMs, CMs ONLY (NO BROKERS)
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Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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