Rohm Semiconductor 2SA2029T2LQ

2SA2029T2LQ Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 1mA 6V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 5mA, 50mA.Single BJT transistor is recommended to keep the continuous collector voltage at -150mA in order to achieve high efficiency.The emitter base voltage can be kept at -6V for high efficiency.The current rating of this fuse is -150mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 140MHz.The breakdown input voltage is 50V volts.Single BJT transistor is possible to have a collector current as low as 150mA volts at Single BJT transistors maximum.

2SA2029T2LQ Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at -6V
the current rating of this device is -150mA
a transition frequency of 140MHz


2SA2029T2LQ Applications
There are a lot of ROHM Semiconductor
2SA2029T2LQ applications of single BJT transistors.


Inverter
Interface
Driver
Muting