STMicroelectronics 2N6668
- Part Number:
- 2N6668
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2465969-2N6668
- Description:
- TRANS PNP DARL 80V 10A TO-220
- Datasheet:
- 2N6668
STMicroelectronics 2N6668 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics 2N6668.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTube
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC-80V
- Max Power Dissipation65W
- Current Rating-10A
- Base Part Number2N66
- Pin Count3
- JESD-30 CodeR-PSFM-T3
- Number of Elements1
- PolarityPNP
- Element ConfigurationSingle
- Power Dissipation65W
- Transistor ApplicationSWITCHING
- Transistor TypePNP - Darlington
- Collector Emitter Voltage (VCEO)80V
- Max Collector Current10A
- DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 5A 3V
- Current - Collector Cutoff (Max)1mA
- JEDEC-95 CodeTO-220AB
- Vce Saturation (Max) @ Ib, Ic3V @ 100mA, 10A
- Collector Emitter Breakdown Voltage80V
- Transition Frequency20MHz
- Collector Base Voltage (VCBO)80V
- Emitter Base Voltage (VEBO)5V
- Continuous Collector Current10A
- VCEsat-Max3 V
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
2N6668 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 1000 @ 5A 3V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3V @ 100mA, 10A.In order to achieve high efficiency, the continuous collector voltage should be kept at 10A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -10A.A transition frequency of 20MHz is present in the part.Collector current can be as low as 10A volts at its maximum.
2N6668 Features
the DC current gain for this device is 1000 @ 5A 3V
the vce saturation(Max) is 3V @ 100mA, 10A
the emitter base voltage is kept at 5V
the current rating of this device is -10A
a transition frequency of 20MHz
2N6668 Applications
There are a lot of STMicroelectronics
2N6668 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 1000 @ 5A 3V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3V @ 100mA, 10A.In order to achieve high efficiency, the continuous collector voltage should be kept at 10A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -10A.A transition frequency of 20MHz is present in the part.Collector current can be as low as 10A volts at its maximum.
2N6668 Features
the DC current gain for this device is 1000 @ 5A 3V
the vce saturation(Max) is 3V @ 100mA, 10A
the emitter base voltage is kept at 5V
the current rating of this device is -10A
a transition frequency of 20MHz
2N6668 Applications
There are a lot of STMicroelectronics
2N6668 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2N6668 More Descriptions
Trans Darlington PNP 80V 10A 65000mW 3-Pin(3 Tab) TO-220
Transistor Pnp Silicon-Darlington Bvceo=80V Ic=10Afor General Purpose Amplifier And Switching Rohs Compliant: Yes
Silicon PNP Transistors Darlington Power Amplifier
Transistor Pnp Silicon-Darlington Bvceo=80V Ic=10Afor General Purpose Amplifier And Switching Rohs Compliant: Yes
Silicon PNP Transistors Darlington Power Amplifier
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