2N6668

STMicroelectronics 2N6668

Part Number:
2N6668
Manufacturer:
STMicroelectronics
Ventron No:
2465969-2N6668
Description:
TRANS PNP DARL 80V 10A TO-220
ECAD Model:
Datasheet:
2N6668

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Specifications
STMicroelectronics 2N6668 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics 2N6668.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tube
  • JESD-609 Code
    e3
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -80V
  • Max Power Dissipation
    65W
  • Current Rating
    -10A
  • Base Part Number
    2N66
  • Pin Count
    3
  • JESD-30 Code
    R-PSFM-T3
  • Number of Elements
    1
  • Polarity
    PNP
  • Element Configuration
    Single
  • Power Dissipation
    65W
  • Transistor Application
    SWITCHING
  • Transistor Type
    PNP - Darlington
  • Collector Emitter Voltage (VCEO)
    80V
  • Max Collector Current
    10A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    1000 @ 5A 3V
  • Current - Collector Cutoff (Max)
    1mA
  • JEDEC-95 Code
    TO-220AB
  • Vce Saturation (Max) @ Ib, Ic
    3V @ 100mA, 10A
  • Collector Emitter Breakdown Voltage
    80V
  • Transition Frequency
    20MHz
  • Collector Base Voltage (VCBO)
    80V
  • Emitter Base Voltage (VEBO)
    5V
  • Continuous Collector Current
    10A
  • VCEsat-Max
    3 V
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
2N6668 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 1000 @ 5A 3V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3V @ 100mA, 10A.In order to achieve high efficiency, the continuous collector voltage should be kept at 10A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -10A.A transition frequency of 20MHz is present in the part.Collector current can be as low as 10A volts at its maximum.

2N6668 Features
the DC current gain for this device is 1000 @ 5A 3V
the vce saturation(Max) is 3V @ 100mA, 10A
the emitter base voltage is kept at 5V
the current rating of this device is -10A
a transition frequency of 20MHz


2N6668 Applications
There are a lot of STMicroelectronics
2N6668 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
2N6668 More Descriptions
Trans Darlington PNP 80V 10A 65000mW 3-Pin(3 Tab) TO-220
Transistor Pnp Silicon-Darlington Bvceo=80V Ic=10Afor General Purpose Amplifier And Switching Rohs Compliant: Yes
Silicon PNP Transistors Darlington Power Amplifier
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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