ON Semiconductor 2N6667
- Part Number:
- 2N6667
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2466828-2N6667
- Description:
- TRANS PNP DARL 60V 10A TO220AB
- ECAD Model:
-
- Datasheet:
- 2N6667
ON Semiconductor 2N6667 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2N6667.
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 2 days ago)
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Supplier Device PackageTO-220AB
- Operating Temperature-65°C~150°C TJ
- PackagingTube
- Published2006
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-65°C
- Voltage - Rated DC-60V
- Max Power Dissipation2W
- Current Rating-10A
- Base Part Number2N6667
- PolarityPNP
- Element ConfigurationSingle
- Power Dissipation65W
- Power - Max2W
- Transistor TypePNP - Darlington
- Collector Emitter Voltage (VCEO)3V
- Max Collector Current10A
- DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 5A 3V
- Current - Collector Cutoff (Max)1mA
- Vce Saturation (Max) @ Ib, Ic3V @ 100mA, 10A
- Collector Emitter Breakdown Voltage60V
- Voltage - Collector Emitter Breakdown (Max)60V
- Current - Collector (Ic) (Max)10A
- Collector Base Voltage (VCBO)60V
- Emitter Base Voltage (VEBO)5V
- Continuous Collector Current10A
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
2N6667 Overview
This device has a DC current gain of 1000 @ 5A 3V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 3V @ 100mA, 10A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 10A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of -10A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.Product package TO-220AB comes from the supplier.Collector Emitter Breakdown occurs at 60VV - Maximum voltage.A maximum collector current of 10A volts is possible.
2N6667 Features
the DC current gain for this device is 1000 @ 5A 3V
the vce saturation(Max) is 3V @ 100mA, 10A
the emitter base voltage is kept at 5V
the current rating of this device is -10A
the supplier device package of TO-220AB
2N6667 Applications
There are a lot of ON Semiconductor
2N6667 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 1000 @ 5A 3V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 3V @ 100mA, 10A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 10A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of -10A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.Product package TO-220AB comes from the supplier.Collector Emitter Breakdown occurs at 60VV - Maximum voltage.A maximum collector current of 10A volts is possible.
2N6667 Features
the DC current gain for this device is 1000 @ 5A 3V
the vce saturation(Max) is 3V @ 100mA, 10A
the emitter base voltage is kept at 5V
the current rating of this device is -10A
the supplier device package of TO-220AB
2N6667 Applications
There are a lot of ON Semiconductor
2N6667 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2N6667 More Descriptions
Transistor Pnp Silicon-Darlington Bvceo=60V Ic=10Afor General Purpose Amplifier And Switching
Trans Darlington PNP 60V 10A 65000mW 3-Pin(3 Tab) TO-220
TRANS PNP DARL 60V 10A TO220
T-PNP SI-GEN PUR AMPNTE Electronics
Trans Darlington PNP 60V 10A 65000mW 3-Pin(3 Tab) TO-220
TRANS PNP DARL 60V 10A TO220
T-PNP SI-GEN PUR AMPNTE Electronics
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