2N6547

STMicroelectronics 2N6547

Part Number:
2N6547
Manufacturer:
STMicroelectronics
Ventron No:
2846180-2N6547
Description:
TRANS NPN 400V 15A TO-3
ECAD Model:
Datasheet:
2N6547

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Specifications
STMicroelectronics 2N6547 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics 2N6547.
  • Contact Plating
    Tin
  • Mount
    Chassis Mount, Through Hole
  • Mounting Type
    Chassis Mount
  • Package / Case
    TO-204AA, TO-3
  • Number of Pins
    2
  • Weight
    4.535924g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    200°C TJ
  • Packaging
    Tube
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    850V
  • Max Power Dissipation
    175W
  • Terminal Position
    BOTTOM
  • Terminal Form
    PIN/PEG
  • Current Rating
    15A
  • Frequency
    3MHz
  • Base Part Number
    2N65
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    175W
  • Case Connection
    COLLECTOR
  • Transistor Application
    SWITCHING
  • Gain Bandwidth Product
    24MHz
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    400V
  • Max Collector Current
    15A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    12 @ 5A 2V
  • Current - Collector Cutoff (Max)
    1mA
  • Vce Saturation (Max) @ Ib, Ic
    5V @ 3A, 15A
  • Collector Emitter Breakdown Voltage
    400V
  • Transition Frequency
    6MHz
  • Collector Emitter Saturation Voltage
    1.5V
  • Collector Base Voltage (VCBO)
    850V
  • Emitter Base Voltage (VEBO)
    9V
  • hFE Min
    6
  • Height
    26mm
  • Length
    39.3mm
  • Width
    8.92mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
2N6547 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 12 @ 5A 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 5V @ 3A, 15A.The emitter base voltage can be kept at 9V for high efficiency.The current rating of this fuse is 15A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 6MHz.Single BJT transistor is possible to have a collector current as low as 15A volts at Single BJT transistors maximum.

2N6547 Features
the DC current gain for this device is 12 @ 5A 2V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 5V @ 3A, 15A
the emitter base voltage is kept at 9V
the current rating of this device is 15A
a transition frequency of 6MHz


2N6547 Applications
There are a lot of STMicroelectronics
2N6547 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
2N6547 More Descriptions
Transistor NPN Silicon Bvcer=850V IC= 15A TO-3 Case For Switcing And Industrial ApplicationsNTE Electronics
IC; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Power Diss
Trans GP BJT NPN 400V 15A 175000mW 3-Pin(2 Tab) TO-3
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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