Fairchild/ON Semiconductor 2N6520TA

2N6520TA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 20 @ 50mA 10V.The collector emitter saturation voltage is -1V, which allows for maximum design flexibility.When VCE saturation is 1V @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of -5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -500mA.In the part, the transition frequency is 40MHz.This device can take an input voltage of 350V volts before it breaks down.A maximum collector current of 500mA volts can be achieved.

2N6520TA Features
the DC current gain for this device is 20 @ 50mA 10V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1V @ 5mA, 50mA
the emitter base voltage is kept at -5V
the current rating of this device is -500mA
a transition frequency of 40MHz


2N6520TA Applications
There are a lot of ON Semiconductor
2N6520TA applications of single BJT transistors.


Inverter
Interface
Driver
Muting