Fairchild/ON Semiconductor 2N6517TA

2N6517TA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20 @ 50mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 5mA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is 500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 40MHz.Single BJT transistor can take a breakdown input voltage of 350V volts.During maximum operation, collector current can be as low as 500mA volts.

2N6517TA Features
the DC current gain for this device is 20 @ 50mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 40MHz


2N6517TA Applications
There are a lot of ON Semiconductor
2N6517TA applications of single BJT transistors.


Inverter
Interface
Driver
Muting