ON Semiconductor 2N6517

Name: 2N6517
Brand: ON Semiconductor
SKU: 2465909-2N6517
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: 2N6517

Manufacturer:: ON Semiconductor

Ventron No:: 2465909-2N6517

Description:: TRANS NPN 350V 0.5A TO92

ECAD Model:

Datasheet:: 2N6515, 6517, 6520

Specifications

ON Semiconductor 2N6517 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2N6517.

Lifecycle Status
OBSOLETE (Last Updated: 1 week ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Published
2004
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
HTS Code
8541.21.00.95
Subcategory
Other Transistors
Voltage - Rated DC
350V
Max Power Dissipation
625mW
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
240
Reach Compliance Code
not_compliant
Current Rating
500mA
Time@Peak Reflow Temperature-Max (s)
30
Base Part Number
2N6517
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
625mW
Transistor Application
SWITCHING
Gain Bandwidth Product
200MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
1V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 50mA 10V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
1V @ 5mA, 50mA
Collector Emitter Breakdown Voltage
350V
Transition Frequency
40MHz
Collector Emitter Saturation Voltage
1V
Collector Base Voltage (VCBO)
350V
Emitter Base Voltage (VEBO)
6V
hFE Min
20
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead

Description

2N6517 Description

2N6517 NPN transistor is one of two types of bipolar transistors that consists of two layers of N-type doped areas sandwiched between two layers of P-type doped semiconductor (base). 2N6517 transistor is in a forward amplifying condition when the base voltage is greater than the emitter voltage and the collector voltage is higher than the base voltage. ON Semiconductor 2N6517 are designed for use in general?purpose amplifier and switching applications.

2N6517 Features

DC Current Gain Specified to 7.0 Amperes
hFE = 2.3 (Min) @ IC = 7.0 Adc - All Devices
Collector-Emitter Sustaining Voltage
VCEO(sus) = 70 Vdc (Min) - 2N6107, 2N6292
High Current Gain Bandwidth Product

2N6517 Applications

Switching applications
General-purpose amplifier

2N6517 More Descriptions

Small Signal Bipolar Transistor, 0.5A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
High Voltage Transistors
MOSFET N-CH 20V 3.3A 8-SOIC
Bipolar Transistor; Transistor Polarity:N Channel; Power Dissipation, Pd:0.625W; DC Current Gain Min (hfe):15; C-E Breakdown Voltage:350V; Collector Current:0.5A; DC Current Gain Max (hfe):300; Leaded Process Compatible:No RoHS Compliant: No

Certification