ON Semiconductor 2N6288
- Part Number:
- 2N6288
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2467944-2N6288
- Description:
- TRANS NPN 30V 7A TO220AB
- Datasheet:
- 2N6288
ON Semiconductor 2N6288 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2N6288.
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Supplier Device PackageTO-220AB
- Operating Temperature-65°C~150°C TJ
- PackagingTube
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Power - Max40W
- Transistor TypeNPN
- DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 3A 4V
- Current - Collector Cutoff (Max)1mA
- Vce Saturation (Max) @ Ib, Ic3.5V @ 3A, 7A
- Voltage - Collector Emitter Breakdown (Max)30V
- Current - Collector (Ic) (Max)7A
- Frequency - Transition4MHz
- RoHS StatusNon-RoHS Compliant
2N6288 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 30 @ 3A 4V.When VCE saturation is 3.5V @ 3A, 7A, transistor means Ic has reached transistors maximum value (saturated).Supplier package TO-220AB contains the product.The device has a 30V maximal voltage - Collector Emitter Breakdown.
2N6288 Features
the DC current gain for this device is 30 @ 3A 4V
the vce saturation(Max) is 3.5V @ 3A, 7A
the supplier device package of TO-220AB
2N6288 Applications
There are a lot of Rochester Electronics, LLC
2N6288 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 30 @ 3A 4V.When VCE saturation is 3.5V @ 3A, 7A, transistor means Ic has reached transistors maximum value (saturated).Supplier package TO-220AB contains the product.The device has a 30V maximal voltage - Collector Emitter Breakdown.
2N6288 Features
the DC current gain for this device is 30 @ 3A 4V
the vce saturation(Max) is 3.5V @ 3A, 7A
the supplier device package of TO-220AB
2N6288 Applications
There are a lot of Rochester Electronics, LLC
2N6288 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2N6288 More Descriptions
Tube Through Hole NPN Single Bipolar (BJT) Transistor 30 @ 3A 4V 7A 40W 4MHz
7.0 A, 30 V NPN Bipolar Power Transistor
Power Bipolar Transistor, 7A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Trans GP BJT NPN 30V 7A 3-Pin (3 Tab) TO-220AB Rail
7.0 A, 30 V NPN Bipolar Power Transistor
Power Bipolar Transistor, 7A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Trans GP BJT NPN 30V 7A 3-Pin (3 Tab) TO-220AB Rail
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