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2N6284G

ON Semiconductor 2N6284G

Part Number:
2N6284G
Manufacturer:
ON Semiconductor
Ventron No:
2845237-2N6284G
Description:
TRANS NPN DARL 100V 20A TO3
ECAD Model:
Datasheet:
2N6284G

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Specifications
ON Semiconductor 2N6284G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2N6284G.
  • Lifecycle Status
    ACTIVE (Last Updated: 2 days ago)
  • Factory Lead Time
    5 Weeks
  • Contact Plating
    Tin
  • Mounting Type
    Through Hole
  • Package / Case
    TO-204AA, TO-3
  • Surface Mount
    NO
  • Number of Pins
    2
  • Weight
    13.607771g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~200°C TJ
  • Packaging
    Tray
  • Published
    1998
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    100V
  • Max Power Dissipation
    160W
  • Terminal Position
    BOTTOM
  • Terminal Form
    PIN/PEG
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    20A
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    2N6284
  • Pin Count
    2
  • Number of Elements
    1
  • Polarity
    NPN
  • Element Configuration
    Single
  • Power Dissipation
    160W
  • Case Connection
    COLLECTOR
  • Transistor Application
    AMPLIFIER
  • Transistor Type
    NPN - Darlington
  • Collector Emitter Voltage (VCEO)
    100V
  • Max Collector Current
    20A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    750 @ 10A 3V
  • Current - Collector Cutoff (Max)
    1mA
  • Vce Saturation (Max) @ Ib, Ic
    3V @ 200mA, 20A
  • Collector Emitter Breakdown Voltage
    100V
  • Transition Frequency
    4MHz
  • Collector Emitter Saturation Voltage
    2V
  • Collector Base Voltage (VCBO)
    100V
  • Emitter Base Voltage (VEBO)
    5V
  • Continuous Collector Current
    20A
  • Height
    26.67mm
  • Length
    39.37mm
  • Width
    8.509mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
2N6284G Overview
DC current gain in this device equals 750 @ 10A 3V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 2V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 3V @ 200mA, 20A.Single BJT transistor is essential to maintain the continuous collector voltage at 20A to achieve high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 20A current rating.As a result, the part has a transition frequency of 4MHz.In extreme cases, the collector current can be as low as 20A volts.

2N6284G Features
the DC current gain for this device is 750 @ 10A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 200mA, 20A
the emitter base voltage is kept at 5V
the current rating of this device is 20A
a transition frequency of 4MHz


2N6284G Applications
There are a lot of ON Semiconductor
2N6284G applications of single BJT transistors.


Inverter
Interface
Driver
Muting
2N6284G More Descriptions
20 A, 100 V NPN Darlington Bipolar Power Transistor
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BIPOLAR Transistor, NPN, 100V, TO-3; Tra; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V;
Trans Darlington NPN 100V 20A 160000mW 3-Pin(2 Tab) TO-3 Tray
BIPOLAR TRANSISTOR, NPN, 100V, TO-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Power Dissipation Pd:160W; DC Collector Current:20A; RF Transistor Case:TO-3; No. of Pins:3Pins; DC Current Gain hFE:2400hFE RoHS Compliant: Yes
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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