CENTRAL 2N6192 technical specifications, attributes, parameters and parts with similar specifications to CENTRAL 2N6192.
- Factory Lead Time8 Weeks
- MountThrough Hole
- Number of Pins3
- Transistor Element MaterialSILICON
- PackagingBulk
- Published2007
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusActive
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTIN LEAD
- Max Power Dissipation10W
- Terminal PositionBOTTOM
- Terminal FormWIRE
- Number of Elements1
- ConfigurationSINGLE
- Polarity/Channel TypePNP
- Collector Emitter Voltage (VCEO)100V
- Max Collector Current5A
- JEDEC-95 CodeTO-5
- DC Current Gain-Min (hFE)30
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
2N6192 Overview
Single BJT transistor is possible to have a collector current as low as 5A volts at Single BJT transistors maximum.
2N6192 Features
2N6192 Applications
There are a lot of Microsemi Corporation
2N6192 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
Single BJT transistor is possible to have a collector current as low as 5A volts at Single BJT transistors maximum.
2N6192 Features
2N6192 Applications
There are a lot of Microsemi Corporation
2N6192 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
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