Central Semiconductor Corp 2N6099
- Part Number:
- 2N6099
- Manufacturer:
- Central Semiconductor Corp
- Ventron No:
- 2464813-2N6099
- Description:
- TRANS NPN 60V 10A TO-220
- ECAD Model:
-
- Datasheet:
- 2N6099
Central Semiconductor Corp 2N6099 technical specifications, attributes, parameters and parts with similar specifications to Central Semiconductor Corp 2N6099.
- Factory Lead Time12 Weeks
- MountThrough Hole
- Package / CaseTO-220
- PackagingBox
- Published2004
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusActive
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- Max Operating Temperature150°C
- Min Operating Temperature-65°C
- HTS Code8541.29.00.95
- SubcategoryOther Transistors
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- JESD-30 CodeR-PSFM-T3
- Qualification StatusNot Qualified
- Number of Elements1
- PolarityPNP
- ConfigurationSINGLE
- Power Dissipation-Max75W
- Case ConnectionCOLLECTOR
- Gain Bandwidth Product5MHz
- Collector Emitter Voltage (VCEO)60V
- Max Collector Current10A
- Collector Emitter Breakdown Voltage60V
- Transition Frequency5MHz
- Collector Emitter Saturation Voltage2.5V
- Frequency - Transition5MHz
- Collector Base Voltage (VCBO)70V
- Emitter Base Voltage (VEBO)5V
- hFE Min20
- DC Current Gain-Min (hFE)20
- Continuous Collector Current450mA
- RoHS StatusRoHS Compliant
2N6099 Overview
With a collector emitter saturation voltage of 2.5V, it offers maximum design flexibility.In order to achieve high efficiency, the continuous collector voltage should be kept at 450mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 5MHz is present in the part.Collector current can be as low as 10A volts at its maximum.
2N6099 Features
a collector emitter saturation voltage of 2.5V
the emitter base voltage is kept at 5V
a transition frequency of 5MHz
2N6099 Applications
There are a lot of Central Semiconductor
2N6099 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
With a collector emitter saturation voltage of 2.5V, it offers maximum design flexibility.In order to achieve high efficiency, the continuous collector voltage should be kept at 450mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 5MHz is present in the part.Collector current can be as low as 10A volts at its maximum.
2N6099 Features
a collector emitter saturation voltage of 2.5V
the emitter base voltage is kept at 5V
a transition frequency of 5MHz
2N6099 Applications
There are a lot of Central Semiconductor
2N6099 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2N6099 More Descriptions
TRANSISTOR, NPN, TO-220; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Power Dissipation Pd:75W; DC Collector Current:10A; DC Current Gain hFE:20; Operating Temperature Max:150°C; No. of Pins:3 ;RoHS Compliant: Yes
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