STMicroelectronics 2N6059

Name: 2N6059
Brand: STMicroelectronics
SKU: 2465888-2N6059
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: 2N6059

Manufacturer:: STMicroelectronics

Ventron No:: 2465888-2N6059

Description:: TRANS NPN DARL 100V 12A TO-3

ECAD Model:

Datasheet:: 2N6059

Specifications

STMicroelectronics 2N6059 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics 2N6059.

Mounting Type
Chassis Mount
Package / Case
TO-204AA, TO-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
200°C TJ
Packaging
Tube
JESD-609 Code
e0
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Additional Feature
BUILT-IN BIAS RESISTORS
Subcategory
Other Transistors
Terminal Position
BOTTOM
Terminal Form
PIN/PEG
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
2N60
Pin Count
2
JESD-30 Code
O-MBFM-P2
Qualification Status
Not Qualified
Number of Elements
1
Configuration
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Case Connection
COLLECTOR
Power - Max
150W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce
750 @ 6A 3V
Current - Collector Cutoff (Max)
1mA
Vce Saturation (Max) @ Ib, Ic
3V @ 120mA, 12A
Voltage - Collector Emitter Breakdown (Max)
100V
Current - Collector (Ic) (Max)
12A
Transition Frequency
4MHz
Frequency - Transition
4MHz
Power Dissipation-Max (Abs)
150W
VCEsat-Max
3 V
Power Dissipation Ambient-Max
150W
RoHS Status
ROHS3 Compliant

Description

2N6059 Description

The 2N6059 is a monolithic Darlington silicon epitaxial-base NPN transistor placed in a Jedec TO-3 metal housing. It's designed for low-frequency switching and power linear applications.
The 2N6059 equivalents are 2N60, 2N600, 2N6000, 2N6001, 2N6002, 2N6052.

2N6059 Features

High gain
High current
High dissipation
Integrated anti-parallel collector-emitter diode
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2N6059 Applications

LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT
Industrial Equivalents
General Purpose Amplifier
Low Frequency Switching
High frequency response
Military, space and other high reliability applications

2N6059 More Descriptions

Transistor NPN Silicon Darlington 100V IC=12A TO-3 Case Power Linear And Low Frequency SwitchNTE Electronics
Darlington Bipolar Transistor; Power Dissipation, Pd:150W
DARLINGTON TRANSISTOR, NPN, 100V, 12A, T; DARLINGTON TRANSISTOR, NPN, 100V, 12A, TO-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency Typ ft:4MHz; Power Dissipation Pd:150W; DC Collector Current:12A; DC Current Gain hFE:750
Darlington Transistor, Npn, 100V, 12A, To-3; Transistor Polarity:npn; Collector Emitter Voltage V(Br)Ceo:100V; Dc Collector Current:12A; Power Dissipation Pd:150W; Transistor Mounting:through Hole; No. Of Pins:2Pins; Product Range:- Rohs Compliant: Yes

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