ON Semiconductor 2N6052G
- Part Number:
- 2N6052G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2465288-2N6052G
- Description:
- TRANS PNP DARL 100V 12A TO3
- Datasheet:
- 2N6052G
ON Semiconductor 2N6052G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2N6052G.
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time5 Weeks
- Contact PlatingTin
- Mounting TypeThrough Hole
- Package / CaseTO-204AA, TO-3
- Surface MountNO
- Number of Pins2
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~200°C TJ
- PackagingTray
- Published2000
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC-100V
- Max Power Dissipation150W
- Terminal PositionBOTTOM
- Terminal FormPIN/PEG
- Peak Reflow Temperature (Cel)260
- Current Rating-12A
- Time@Peak Reflow Temperature-Max (s)40
- Base Part Number2N6052
- Pin Count2
- Number of Elements1
- PolarityPNP
- Element ConfigurationSingle
- Power Dissipation150W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Transistor TypePNP - Darlington
- Collector Emitter Voltage (VCEO)100V
- Max Collector Current12A
- DC Current Gain (hFE) (Min) @ Ic, Vce750 @ 6A 3V
- Current - Collector Cutoff (Max)1mA
- Vce Saturation (Max) @ Ib, Ic3V @ 120mA, 12A
- Collector Emitter Breakdown Voltage100V
- Transition Frequency4MHz
- Collector Emitter Saturation Voltage2V
- Collector Base Voltage (VCBO)100V
- Emitter Base Voltage (VEBO)5V
- Continuous Collector Current12A
- Height8.51mm
- Length39.37mm
- Width26.67mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2N6052G Overview
This device has a DC current gain of 750 @ 6A 3V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 2V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of 12A is necessary for high efficiency.The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -12A.In this part, there is a transition frequency of 4MHz.The maximum collector current is 12A volts.
2N6052G Features
the DC current gain for this device is 750 @ 6A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 120mA, 12A
the emitter base voltage is kept at 5V
the current rating of this device is -12A
a transition frequency of 4MHz
2N6052G Applications
There are a lot of ON Semiconductor
2N6052G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 750 @ 6A 3V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 2V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of 12A is necessary for high efficiency.The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -12A.In this part, there is a transition frequency of 4MHz.The maximum collector current is 12A volts.
2N6052G Features
the DC current gain for this device is 750 @ 6A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 120mA, 12A
the emitter base voltage is kept at 5V
the current rating of this device is -12A
a transition frequency of 4MHz
2N6052G Applications
There are a lot of ON Semiconductor
2N6052G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2N6052G More Descriptions
12 A, 100 V PNP Darlington Bipolar Power Transistor
Power Bipolar Transistor, 12A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-204AA, Metal, 2 Pin
Trans Darlington PNP 100V 12A 150000mW 3-Pin(2 Tab) TO-3 Tray
2N Series 100 V 12 A Darlington Complementary Silicon Power Transistor TO-204AA
TRANSISTOR, BIPOL, PNP, 100V, TO-3-2; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -100V; Transition Frequency ft: -; Power Dissipation Pd: 150W; DC Collector Current: -12A; DC Current Gain hFE: 100hFE; Transi
Bipolar Transistor, Pnp, -100V, To-204; Transistor Polarity:pnp; Collector Emitter Voltage V(Br)Ceo:100V; Dc Collector Current:12A; Power Dissipation Pd:150W; Transistor Mounting:through Hole; No. Of Pins:2Pins; Product Range:- Rohs Compliant: Yes
Power Bipolar Transistor, 12A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-204AA, Metal, 2 Pin
Trans Darlington PNP 100V 12A 150000mW 3-Pin(2 Tab) TO-3 Tray
2N Series 100 V 12 A Darlington Complementary Silicon Power Transistor TO-204AA
TRANSISTOR, BIPOL, PNP, 100V, TO-3-2; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -100V; Transition Frequency ft: -; Power Dissipation Pd: 150W; DC Collector Current: -12A; DC Current Gain hFE: 100hFE; Transi
Bipolar Transistor, Pnp, -100V, To-204; Transistor Polarity:pnp; Collector Emitter Voltage V(Br)Ceo:100V; Dc Collector Current:12A; Power Dissipation Pd:150W; Transistor Mounting:through Hole; No. Of Pins:2Pins; Product Range:- Rohs Compliant: Yes
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