ON Semiconductor 2N6045G
- Part Number:
- 2N6045G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2465454-2N6045G
- Description:
- TRANS NPN DARL 100V 8A TO220AB
- ECAD Model:
-
- Datasheet:
- 2N6045G
ON Semiconductor 2N6045G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2N6045G.
- Lifecycle StatusACTIVE (Last Updated: 22 hours ago)
- Factory Lead Time2 Weeks
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Surface MountNO
- Number of Pins3
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTube
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC-100V
- Max Power Dissipation75W
- Peak Reflow Temperature (Cel)260
- Current Rating8A
- Time@Peak Reflow Temperature-Max (s)40
- Base Part Number2N6045
- Pin Count3
- Number of Elements1
- PolarityNPN
- Element ConfigurationSingle
- Power Dissipation75W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Transistor TypeNPN - Darlington
- Collector Emitter Voltage (VCEO)100V
- Max Collector Current8A
- DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 3A 4V
- Current - Collector Cutoff (Max)20μA
- JEDEC-95 CodeTO-220AB
- Vce Saturation (Max) @ Ib, Ic2V @ 12mA, 3A
- Collector Emitter Breakdown Voltage100V
- Collector Emitter Saturation Voltage2V
- Collector Base Voltage (VCBO)100V
- Emitter Base Voltage (VEBO)5V
- hFE Min1000
- Continuous Collector Current8A
- Height15.748mm
- Length10.2616mm
- Width4.826mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2N6045G Overview
DC current gain in this device equals 1000 @ 3A 4V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 2V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 2V @ 12mA, 3A.Single BJT transistor is essential to maintain the continuous collector voltage at 8A to achieve high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 8A current rating.In extreme cases, the collector current can be as low as 8A volts.
2N6045G Features
the DC current gain for this device is 1000 @ 3A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 12mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
2N6045G Applications
There are a lot of ON Semiconductor
2N6045G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 1000 @ 3A 4V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 2V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 2V @ 12mA, 3A.Single BJT transistor is essential to maintain the continuous collector voltage at 8A to achieve high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 8A current rating.In extreme cases, the collector current can be as low as 8A volts.
2N6045G Features
the DC current gain for this device is 1000 @ 3A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 12mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
2N6045G Applications
There are a lot of ON Semiconductor
2N6045G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2N6045G More Descriptions
8.0 A, 100 V NPN Darlington Bipolar Power Transistor
Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Trans Darlington NPN 100V 8A 75000mW 3-Pin(3 Tab) TO-220AB Tube
2N6045 Series 100 V 8 A Medium-Power Complementary Silicon Transistor - TO-220AB
ON SEMICONDUCTOR - 2N6045G - Bipolar (BJT) Single Transistor, Darlington, NPN, 100 V, 75 W, 8 A, 1000 hFE
Transistor 2N6045G Darlington NPN 100 Volt 8 Amp TO-220AB
20Ã×A 100V 75W 8A 1000@3A4V 2V@3A12mA NPN -65¡Í~ 150¡Í@(Tj) TO-220 Bipolar Transistors - BJT ROHS
TRANSISTOR, BIPOL, NPN, 100V, TO-220-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: -; Power Dissipation Pd: 75W; DC Collector Current: 8A; DC Current Gain hFE: 100hFE; Transist
Darlington Transistor, Npn, 100V, To-220; Transistor Polarity:Npn; Collector Emitter Voltage Max:100V; Continuous Collector Current:8A; Power Dissipation:75W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes |Onsemi 2N6045G.
Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Trans Darlington NPN 100V 8A 75000mW 3-Pin(3 Tab) TO-220AB Tube
2N6045 Series 100 V 8 A Medium-Power Complementary Silicon Transistor - TO-220AB
ON SEMICONDUCTOR - 2N6045G - Bipolar (BJT) Single Transistor, Darlington, NPN, 100 V, 75 W, 8 A, 1000 hFE
Transistor 2N6045G Darlington NPN 100 Volt 8 Amp TO-220AB
20Ã×A 100V 75W 8A 1000@3A4V 2V@3A12mA NPN -65¡Í~ 150¡Í@(Tj) TO-220 Bipolar Transistors - BJT ROHS
TRANSISTOR, BIPOL, NPN, 100V, TO-220-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: -; Power Dissipation Pd: 75W; DC Collector Current: 8A; DC Current Gain hFE: 100hFE; Transist
Darlington Transistor, Npn, 100V, To-220; Transistor Polarity:Npn; Collector Emitter Voltage Max:100V; Continuous Collector Current:8A; Power Dissipation:75W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes |Onsemi 2N6045G.
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