ON Semiconductor 2N6045
- Part Number:
- 2N6045
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2466874-2N6045
- Description:
- TRANS NPN DARL 100V 8A TO220AB
- Datasheet:
- 2N6045
ON Semiconductor 2N6045 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2N6045.
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Supplier Device PackageTO-220AB
- Operating Temperature-65°C~150°C TJ
- PackagingTube
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Power - Max75W
- Transistor TypeNPN - Darlington
- DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 3A 4V
- Current - Collector Cutoff (Max)20μA
- Vce Saturation (Max) @ Ib, Ic2V @ 12mA, 3A
- Voltage - Collector Emitter Breakdown (Max)100V
- Current - Collector (Ic) (Max)8A
- RoHS StatusNon-RoHS Compliant
2N6045 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 1000 @ 3A 4V.When VCE saturation is 2V @ 12mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Supplier package TO-220AB contains the product.The device has a 100V maximal voltage - Collector Emitter Breakdown.
2N6045 Features
the DC current gain for this device is 1000 @ 3A 4V
the vce saturation(Max) is 2V @ 12mA, 3A
the supplier device package of TO-220AB
2N6045 Applications
There are a lot of Rochester Electronics, LLC
2N6045 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 1000 @ 3A 4V.When VCE saturation is 2V @ 12mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Supplier package TO-220AB contains the product.The device has a 100V maximal voltage - Collector Emitter Breakdown.
2N6045 Features
the DC current gain for this device is 1000 @ 3A 4V
the vce saturation(Max) is 2V @ 12mA, 3A
the supplier device package of TO-220AB
2N6045 Applications
There are a lot of Rochester Electronics, LLC
2N6045 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2N6045 More Descriptions
Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:-; Power Dissipation Pd:75W; DC Current:8A;
BIPOLAR TRANSISTOR, NPN, 100V, TO-220; Transistor Polarity:NPN; No. of Pins:3Pins; Transistor Mounting:Through Hole; Operating Temperature Max:150°C; Product Range:-; Qualification:-; Collector Emitter Voltage Max:100V RoHS Compliant: Yes
BIPOLAR TRANSISTOR, NPN, 100V, TO-220; Transistor Polarity:NPN; No. of Pins:3Pins; Transistor Mounting:Through Hole; Operating Temperature Max:150°C; Product Range:-; Qualification:-; Collector Emitter Voltage Max:100V RoHS Compliant: Yes
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