ON Semiconductor 2N6043G
- Part Number:
- 2N6043G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2465550-2N6043G
- Description:
- TRANS NPN DARL 60V 8A TO220AB
- Datasheet:
- 2N6043G
ON Semiconductor 2N6043G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2N6043G.
- Lifecycle StatusACTIVE (Last Updated: 3 days ago)
- Factory Lead Time2 Weeks
- Contact PlatingTin
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Surface MountNO
- Number of Pins3
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTube
- Published2001
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC60V
- Max Power Dissipation75W
- Peak Reflow Temperature (Cel)260
- Current Rating8A
- Time@Peak Reflow Temperature-Max (s)40
- Base Part Number2N6043
- Pin Count3
- Number of Elements1
- PolarityNPN
- Element ConfigurationSingle
- Power Dissipation75W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Transistor TypeNPN - Darlington
- Collector Emitter Voltage (VCEO)60V
- Max Collector Current8A
- DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 4A 4V
- Current - Collector Cutoff (Max)20μA
- JEDEC-95 CodeTO-220AB
- Vce Saturation (Max) @ Ib, Ic2V @ 16mA, 4A
- Collector Emitter Breakdown Voltage60V
- Collector Emitter Saturation Voltage2V
- Collector Base Voltage (VCBO)60V
- Emitter Base Voltage (VEBO)5V
- Continuous Collector Current8A
- Height15.748mm
- Length10.2616mm
- Width4.826mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2N6043G Overview
In this device, the DC current gain is 1000 @ 4A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 2V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 2V @ 16mA, 4A.Maintaining the continuous collector voltage at 8A is essential for high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (8A).Maximum collector currents can be below 8A volts.
2N6043G Features
the DC current gain for this device is 1000 @ 4A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 16mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
2N6043G Applications
There are a lot of ON Semiconductor
2N6043G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 1000 @ 4A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 2V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 2V @ 16mA, 4A.Maintaining the continuous collector voltage at 8A is essential for high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (8A).Maximum collector currents can be below 8A volts.
2N6043G Features
the DC current gain for this device is 1000 @ 4A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 16mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
2N6043G Applications
There are a lot of ON Semiconductor
2N6043G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2N6043G More Descriptions
8.0 A, 60 V NPN Darlington Bipolar Power Transistor
2N Series 60 V 8 A NPN Medium-Power Darlington Silicon Transistor - TO-220AB
Power Bipolar Transistor, 8A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Trans Darlington NPN 60V 8A 3-Pin(3 Tab) TO-220AB Rail - Rail/Tube
Transistors, Darlington, 8A 60V Bipolar Power NPN | ON Semiconductor 2N6043G
TRANSISTOR, BIPOL, NPN, 60V, TO-220-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: -; Power Dissipation Pd: 75W; DC Collector Current: 8A; DC Current Gain hFE: 100hFE; Transistor
Darlington Transistor, Npn, 60V To-220; Transistor Polarity:Npn; No. Of Pins:3Pins; Transistor Mounting:Through Hole; Operating Temperature Max:150°C; Product Range:-; Qualification:-; Collector Emitter Voltage Max:60V Rohs Compliant: Yes |Onsemi 2N6043G.
2N Series 60 V 8 A NPN Medium-Power Darlington Silicon Transistor - TO-220AB
Power Bipolar Transistor, 8A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Trans Darlington NPN 60V 8A 3-Pin(3 Tab) TO-220AB Rail - Rail/Tube
Transistors, Darlington, 8A 60V Bipolar Power NPN | ON Semiconductor 2N6043G
TRANSISTOR, BIPOL, NPN, 60V, TO-220-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: -; Power Dissipation Pd: 75W; DC Collector Current: 8A; DC Current Gain hFE: 100hFE; Transistor
Darlington Transistor, Npn, 60V To-220; Transistor Polarity:Npn; No. Of Pins:3Pins; Transistor Mounting:Through Hole; Operating Temperature Max:150°C; Product Range:-; Qualification:-; Collector Emitter Voltage Max:60V Rohs Compliant: Yes |Onsemi 2N6043G.
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