ON Semiconductor 2N6042G
- Part Number:
- 2N6042G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2465484-2N6042G
- Description:
- TRANS PNP DARL 100V 8A TO220AB
- Datasheet:
- 2N6042G
ON Semiconductor 2N6042G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2N6042G.
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time2 Weeks
- Contact PlatingTin
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Surface MountNO
- Number of Pins3
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTube
- Published2000
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC-100V
- Max Power Dissipation75W
- Peak Reflow Temperature (Cel)260
- Current Rating-8A
- Time@Peak Reflow Temperature-Max (s)40
- Base Part Number2N6042
- Pin Count3
- Number of Elements1
- PolarityPNP
- Element ConfigurationSingle
- Power Dissipation75W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Transistor TypePNP - Darlington
- Collector Emitter Voltage (VCEO)100V
- Max Collector Current8A
- DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 3A 4V
- Current - Collector Cutoff (Max)20μA
- JEDEC-95 CodeTO-220AB
- Vce Saturation (Max) @ Ib, Ic2V @ 12mA, 3A
- Collector Emitter Breakdown Voltage100V
- Collector Emitter Saturation Voltage2V
- Collector Base Voltage (VCBO)100V
- Emitter Base Voltage (VEBO)5V
- Continuous Collector Current8A
- Height15.748mm
- Length10.2616mm
- Width4.826mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2N6042G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 1000 @ 3A 4V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 2V @ 12mA, 3A.Single BJT transistor is recommended to keep the continuous collector voltage at 8A in order to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is -8A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Single BJT transistor is possible to have a collector current as low as 8A volts at Single BJT transistors maximum.
2N6042G Features
the DC current gain for this device is 1000 @ 3A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 12mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -8A
2N6042G Applications
There are a lot of ON Semiconductor
2N6042G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 1000 @ 3A 4V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 2V @ 12mA, 3A.Single BJT transistor is recommended to keep the continuous collector voltage at 8A in order to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is -8A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Single BJT transistor is possible to have a collector current as low as 8A volts at Single BJT transistors maximum.
2N6042G Features
the DC current gain for this device is 1000 @ 3A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 12mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -8A
2N6042G Applications
There are a lot of ON Semiconductor
2N6042G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2N6042G More Descriptions
8.0 A, 100 V PNP Darlington Bipolar Power Transistor
2N Series 100 V 8 A PNP Medium-Power Darlington Silicon Transistor - TO-220AB
Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Trans Darlington PNP 100V 8A 75000mW 3-Pin(3 Tab) TO-220AB Tube
TRANSISTOR, BIPOL, NPN, 100V, TO-220-3; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -100V; Transition Frequency ft: -; Power Dissipation Pd: 75W; DC Collector Current: -8A; DC Current Gain hFE: 100hFE; Transi
Darlington Transistor, Pnp, -100V, To-220; Transistor Polarity:pnp; Collector Emitter Voltage V(Br)Ceo:100V; Dc Collector Current:8A; Power Dissipation Pd:75W; Transistor Mounting:through Hole; No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes
2N Series 100 V 8 A PNP Medium-Power Darlington Silicon Transistor - TO-220AB
Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Trans Darlington PNP 100V 8A 75000mW 3-Pin(3 Tab) TO-220AB Tube
TRANSISTOR, BIPOL, NPN, 100V, TO-220-3; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -100V; Transition Frequency ft: -; Power Dissipation Pd: 75W; DC Collector Current: -8A; DC Current Gain hFE: 100hFE; Transi
Darlington Transistor, Pnp, -100V, To-220; Transistor Polarity:pnp; Collector Emitter Voltage V(Br)Ceo:100V; Dc Collector Current:8A; Power Dissipation Pd:75W; Transistor Mounting:through Hole; No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes
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