Central Semiconductor Corp 2N6041
- Part Number:
- 2N6041
- Manufacturer:
- Central Semiconductor Corp
- Ventron No:
- 2845950-2N6041
- Description:
- TRANS PNP DARL 80V 8A TO-220
- Datasheet:
- 2N6041
Central Semiconductor Corp 2N6041 technical specifications, attributes, parameters and parts with similar specifications to Central Semiconductor Corp 2N6041.
- Factory Lead Time12 Weeks
- MountThrough Hole
- Package / CaseTO-220
- PackagingBulk
- Published2009
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusActive
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- Max Operating Temperature150°C
- Min Operating Temperature-65°C
- Pin Count3
- JESD-30 CodeR-PSFM-T3
- Number of Elements1
- PolarityPNP
- Power Dissipation-Max75W
- Element ConfigurationSingle
- Power Dissipation75W
- Transistor ApplicationAMPLIFIER
- Collector Emitter Voltage (VCEO)2V
- Max Collector Current8A
- Collector Emitter Breakdown Voltage80V
- Transition Frequency4MHz
- Frequency - Transition4MHz
- Collector Base Voltage (VCBO)80V
- Emitter Base Voltage (VEBO)5V
- hFE Min1000
- RoHS StatusRoHS Compliant
2N6041 Overview
If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 4MHz is present in the part.Collector current can be as low as 8A volts at its maximum.
2N6041 Features
the emitter base voltage is kept at 5V
a transition frequency of 4MHz
2N6041 Applications
There are a lot of Central Semiconductor
2N6041 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 4MHz is present in the part.Collector current can be as low as 8A volts at its maximum.
2N6041 Features
the emitter base voltage is kept at 5V
a transition frequency of 4MHz
2N6041 Applications
There are a lot of Central Semiconductor
2N6041 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2N6041 More Descriptions
Trans Darlington PNP 80V 8A 3-Pin TO-220 Box
Power Bipolar Transistor, 8A I(C), 80V V(Br)Ceo, 1-Element, Pnp, Silicon, To-220Ab, Plastic/Epoxy, 3 Pin |Central Semiconductor 2N6041
Darlington Transistors PNP Darl SW
Power Bipolar Transistor, 8A I(C), 80V V(Br)Ceo, 1-Element, Pnp, Silicon, To-220Ab, Plastic/Epoxy, 3 Pin |Central Semiconductor 2N6041
Darlington Transistors PNP Darl SW
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