ON Semiconductor 2N6040
- Part Number:
- 2N6040
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2846438-2N6040
- Description:
- TRANS PNP DARL 60V 8A TO220AB
- Datasheet:
- 2N6040
ON Semiconductor 2N6040 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2N6040.
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Surface MountNO
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTube
- Published2007
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- Additional FeatureLEADFORM OPTIONS ARE AVAILABLE
- SubcategoryOther Transistors
- Voltage - Rated DC-60V
- Max Power Dissipation75W
- Peak Reflow Temperature (Cel)240
- Reach Compliance Codenot_compliant
- Current Rating-8A
- Time@Peak Reflow Temperature-Max (s)30
- Base Part Number2N6040
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- PolarityPNP
- Element ConfigurationSingle
- Power Dissipation75W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Transistor TypePNP - Darlington
- Collector Emitter Voltage (VCEO)60V
- Max Collector Current8A
- DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 4A 4V
- Current - Collector Cutoff (Max)20μA
- JEDEC-95 CodeTO-220AB
- Vce Saturation (Max) @ Ib, Ic2V @ 16mA, 4A
- Collector Emitter Breakdown Voltage60V
- Transition Frequency4MHz
- Collector Emitter Saturation Voltage2V
- Collector Base Voltage (VCBO)60V
- Emitter Base Voltage (VEBO)5V
- Continuous Collector Current8A
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
2N6040 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 1000 @ 4A 4V.With a collector emitter saturation voltage of 2V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 2V @ 16mA, 4A.In order to achieve high efficiency, the continuous collector voltage should be kept at 8A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -8A.A transition frequency of 4MHz is present in the part.Collector current can be as low as 8A volts at its maximum.
2N6040 Features
the DC current gain for this device is 1000 @ 4A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 16mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is -8A
a transition frequency of 4MHz
2N6040 Applications
There are a lot of ON Semiconductor
2N6040 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 1000 @ 4A 4V.With a collector emitter saturation voltage of 2V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 2V @ 16mA, 4A.In order to achieve high efficiency, the continuous collector voltage should be kept at 8A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -8A.A transition frequency of 4MHz is present in the part.Collector current can be as low as 8A volts at its maximum.
2N6040 Features
the DC current gain for this device is 1000 @ 4A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 16mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is -8A
a transition frequency of 4MHz
2N6040 Applications
There are a lot of ON Semiconductor
2N6040 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2N6040 More Descriptions
8.0 A, 60 V PNP Darlington Bipolar Power Transistor
Power Bipolar Transistor, 8A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
TRANS PNP DARL 60V 8A TO220AB
T8 80V SG SO-8FL-U8FL
Power Bipolar Transistor, 8A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
TRANS PNP DARL 60V 8A TO220AB
T8 80V SG SO-8FL-U8FL
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