2N6040

ON Semiconductor 2N6040

Part Number:
2N6040
Manufacturer:
ON Semiconductor
Ventron No:
2846438-2N6040
Description:
TRANS PNP DARL 60V 8A TO220AB
ECAD Model:
Datasheet:
2N6040

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Specifications
ON Semiconductor 2N6040 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2N6040.
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Surface Mount
    NO
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~150°C TJ
  • Packaging
    Tube
  • Published
    2007
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Additional Feature
    LEADFORM OPTIONS ARE AVAILABLE
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -60V
  • Max Power Dissipation
    75W
  • Peak Reflow Temperature (Cel)
    240
  • Reach Compliance Code
    not_compliant
  • Current Rating
    -8A
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Base Part Number
    2N6040
  • Pin Count
    3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Polarity
    PNP
  • Element Configuration
    Single
  • Power Dissipation
    75W
  • Case Connection
    COLLECTOR
  • Transistor Application
    SWITCHING
  • Transistor Type
    PNP - Darlington
  • Collector Emitter Voltage (VCEO)
    60V
  • Max Collector Current
    8A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    1000 @ 4A 4V
  • Current - Collector Cutoff (Max)
    20μA
  • JEDEC-95 Code
    TO-220AB
  • Vce Saturation (Max) @ Ib, Ic
    2V @ 16mA, 4A
  • Collector Emitter Breakdown Voltage
    60V
  • Transition Frequency
    4MHz
  • Collector Emitter Saturation Voltage
    2V
  • Collector Base Voltage (VCBO)
    60V
  • Emitter Base Voltage (VEBO)
    5V
  • Continuous Collector Current
    8A
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
2N6040 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 1000 @ 4A 4V.With a collector emitter saturation voltage of 2V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 2V @ 16mA, 4A.In order to achieve high efficiency, the continuous collector voltage should be kept at 8A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -8A.A transition frequency of 4MHz is present in the part.Collector current can be as low as 8A volts at its maximum.

2N6040 Features
the DC current gain for this device is 1000 @ 4A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 16mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is -8A
a transition frequency of 4MHz


2N6040 Applications
There are a lot of ON Semiconductor
2N6040 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
2N6040 More Descriptions
8.0 A, 60 V PNP Darlington Bipolar Power Transistor
Power Bipolar Transistor, 8A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
TRANS PNP DARL 60V 8A TO220AB
T8 80V SG SO-8FL-U8FL
2N6040 Detail Images
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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