STMicroelectronics 2N6036
- Part Number:
- 2N6036
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2845597-2N6036
- Description:
- TRANS PNP DARL 80V 4A SOT-32
- Datasheet:
- 2N6036/39
STMicroelectronics 2N6036 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics 2N6036.
- Contact PlatingTin
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-225AA, TO-126-3
- Number of Pins3
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTube
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC-80V
- Max Power Dissipation40W
- Current Rating-4A
- Base Part Number2N60
- Pin Count3
- Number of Elements1
- PolarityNPN
- Element ConfigurationSingle
- Power Dissipation40W
- Case ConnectionISOLATED
- Transistor ApplicationSWITCHING
- Transistor TypePNP - Darlington
- Collector Emitter Voltage (VCEO)80V
- Max Collector Current4A
- DC Current Gain (hFE) (Min) @ Ic, Vce750 @ 2A 3V
- Current - Collector Cutoff (Max)100μA
- Vce Saturation (Max) @ Ib, Ic3V @ 40mA, 4A
- Collector Emitter Breakdown Voltage80V
- Transition Frequency25MHz
- Collector Emitter Saturation Voltage2V
- Collector Base Voltage (VCBO)80V
- Emitter Base Voltage (VEBO)5V
- hFE Min100
- VCEsat-Max3 V
- Collector-Base Capacitance-Max200pF
- Height11.05mm
- Length7.8mm
- Width2.9mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2N6036 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 750 @ 2A 3V.The collector emitter saturation voltage is 2V, which allows for maximum design flexibility.When VCE saturation is 3V @ 40mA, 4A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -4A.In the part, the transition frequency is 25MHz.A maximum collector current of 4A volts can be achieved.
2N6036 Features
the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
a transition frequency of 25MHz
2N6036 Applications
There are a lot of STMicroelectronics
2N6036 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 750 @ 2A 3V.The collector emitter saturation voltage is 2V, which allows for maximum design flexibility.When VCE saturation is 3V @ 40mA, 4A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -4A.In the part, the transition frequency is 25MHz.A maximum collector current of 4A volts can be achieved.
2N6036 Features
the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
a transition frequency of 25MHz
2N6036 Applications
There are a lot of STMicroelectronics
2N6036 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2N6036 More Descriptions
Electronics 2N6036 Transistor PNP Silicon-darlington BVceo=80V IC=4A TO-126 Case For Purpose lifier
T-PNP-SI DARL GEN PUR AMPNTE Electronics
TRANS PNP DARL 80V 4A TO126
T-PNP-SI DARL GEN PUR AMPNTE Electronics
TRANS PNP DARL 80V 4A TO126
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