2N6036

STMicroelectronics 2N6036

Part Number:
2N6036
Manufacturer:
STMicroelectronics
Ventron No:
2845597-2N6036
Description:
TRANS PNP DARL 80V 4A SOT-32
ECAD Model:
Datasheet:
2N6036/39

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Specifications
STMicroelectronics 2N6036 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics 2N6036.
  • Contact Plating
    Tin
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-225AA, TO-126-3
  • Number of Pins
    3
  • Weight
    4.535924g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tube
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -80V
  • Max Power Dissipation
    40W
  • Current Rating
    -4A
  • Base Part Number
    2N60
  • Pin Count
    3
  • Number of Elements
    1
  • Polarity
    NPN
  • Element Configuration
    Single
  • Power Dissipation
    40W
  • Case Connection
    ISOLATED
  • Transistor Application
    SWITCHING
  • Transistor Type
    PNP - Darlington
  • Collector Emitter Voltage (VCEO)
    80V
  • Max Collector Current
    4A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    750 @ 2A 3V
  • Current - Collector Cutoff (Max)
    100μA
  • Vce Saturation (Max) @ Ib, Ic
    3V @ 40mA, 4A
  • Collector Emitter Breakdown Voltage
    80V
  • Transition Frequency
    25MHz
  • Collector Emitter Saturation Voltage
    2V
  • Collector Base Voltage (VCBO)
    80V
  • Emitter Base Voltage (VEBO)
    5V
  • hFE Min
    100
  • VCEsat-Max
    3 V
  • Collector-Base Capacitance-Max
    200pF
  • Height
    11.05mm
  • Length
    7.8mm
  • Width
    2.9mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
2N6036 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 750 @ 2A 3V.The collector emitter saturation voltage is 2V, which allows for maximum design flexibility.When VCE saturation is 3V @ 40mA, 4A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -4A.In the part, the transition frequency is 25MHz.A maximum collector current of 4A volts can be achieved.

2N6036 Features
the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
a transition frequency of 25MHz


2N6036 Applications
There are a lot of STMicroelectronics
2N6036 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
2N6036 More Descriptions
Electronics 2N6036 Transistor PNP Silicon-darlington BVceo=80V IC=4A TO-126 Case For Purpose lifier
T-PNP-SI DARL GEN PUR AMPNTE Electronics
TRANS PNP DARL 80V 4A TO126
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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