ON Semiconductor 2N6035G
- Part Number:
- 2N6035G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2845871-2N6035G
- Description:
- TRANS PNP DARL 60V 4A TO-225AA
- ECAD Model:
-
- Datasheet:
- 2N6035G
ON Semiconductor 2N6035G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2N6035G.
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time8 Weeks
- Contact PlatingTin
- Mounting TypeThrough Hole
- Package / CaseTO-225AA, TO-126-3
- Surface MountNO
- Number of Pins3
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingBulk
- Published2012
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC-60V
- Max Power Dissipation40W
- Peak Reflow Temperature (Cel)260
- Current Rating4A
- Time@Peak Reflow Temperature-Max (s)40
- Base Part Number2N6035
- Pin Count3
- Number of Elements1
- PolarityPNP
- Element ConfigurationSingle
- Transistor ApplicationAMPLIFIER
- Halogen FreeHalogen Free
- Transistor TypePNP - Darlington
- Collector Emitter Voltage (VCEO)60V
- Max Collector Current4A
- DC Current Gain (hFE) (Min) @ Ic, Vce750 @ 2A 3V
- Current - Collector Cutoff (Max)100μA
- Vce Saturation (Max) @ Ib, Ic3V @ 40mA, 4A
- Collector Emitter Breakdown Voltage60V
- Transition Frequency25MHz
- Collector Emitter Saturation Voltage2V
- Collector Base Voltage (VCBO)60V
- Emitter Base Voltage (VEBO)5V
- hFE Min100
- Height6.35mm
- Length6.35mm
- Width6.35mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2N6035G Overview
This device has a DC current gain of 750 @ 2A 3V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 2V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 4A.In this part, there is a transition frequency of 25MHz.The maximum collector current is 4A volts.
2N6035G Features
the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 25MHz
2N6035G Applications
There are a lot of ON Semiconductor
2N6035G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 750 @ 2A 3V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 2V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 4A.In this part, there is a transition frequency of 25MHz.The maximum collector current is 4A volts.
2N6035G Features
the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 25MHz
2N6035G Applications
There are a lot of ON Semiconductor
2N6035G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2N6035G More Descriptions
4.0 A, 60 V PNP Darlington Bipolar Power Transistor
2N Series PNP 40 W 60 V 4 A Through Hole Darlington Transistor - TO-225
Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin
ON SEMICONDUCTOR - 2N6035G - DARLINGTON TRANSISTOR, PNP, -60V, TO-225
Trans Darlington PNP 60V 4A 40000mW 3-Pin(3 Tab) TO-225 Box
2N Series PNP 40 W 60 V 4 A Through Hole Darlington Transistor - TO-225
Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin
ON SEMICONDUCTOR - 2N6035G - DARLINGTON TRANSISTOR, PNP, -60V, TO-225
Trans Darlington PNP 60V 4A 40000mW 3-Pin(3 Tab) TO-225 Box
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
15 November 2023
An Introduction to USB to Serial Converter Module CP2102
Ⅰ. Overview of CP2102Ⅱ. Manufacturer of CP2102Ⅲ. CP2102 symbol, footprint and pin configurationⅣ. Features of CP2102Ⅴ. Technical parameters of CP2102Ⅵ. What are the advantages of CP2102?Ⅶ. What is... -
15 November 2023
S9015 PNP Transistor Equivalents, Structure, S9015 vs C9015 and More
Ⅰ. Overview of S9015 transistorⅡ. Structure and working principle of S9015 transistorⅢ. Pin configuration of S9015 transistorⅣ. Features of S9015 transistorⅤ. Technical parameters of S9015 transistorⅥ. Absolute maximum... -
16 November 2023
Get to Know the LM1117 Linear Voltage Regulator
Ⅰ. What is a voltage regulator?Ⅱ. Overview of LM1117 linear voltage regulatorⅢ. Pin configuration of LM1117Ⅳ. Features of LM1117 linear voltage regulatorⅤ. How does LM1117 linear voltage regulator... -
16 November 2023
7815 Voltage Regulator Symbol, Features, Mnufacturer and Working Principle
Ⅰ. Overview of 7815 voltage regulatorⅡ. 7815 symbol, footprint and 3D modelsⅢ. Features of 7815 voltage regulatorⅣ. Manufacturer of 7815 voltage regulatorⅤ. Technical parameters of 7815 voltage regulatorⅥ....
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.