ON Semiconductor 2N6034
- Part Number:
- 2N6034
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3069157-2N6034
- Description:
- TRANS PNP DARL 40V 4A TO225AA
- ECAD Model:
-
- Datasheet:
- 2N6034
ON Semiconductor 2N6034 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2N6034.
- Lifecycle StatusOBSOLETE (Last Updated: 9 hours ago)
- Mounting TypeThrough Hole
- Package / CaseTO-225AA, TO-126-3
- Number of Pins3
- Supplier Device PackageTO-225AA
- Operating Temperature-65°C~150°C TJ
- PackagingBulk
- Published2009
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-65°C
- Voltage - Rated DC-40V
- Max Power Dissipation40W
- Current Rating-4A
- Base Part Number2N6034
- PolarityPNP
- Element ConfigurationSingle
- Power Dissipation40W
- Power - Max40W
- Transistor TypePNP - Darlington
- Collector Emitter Voltage (VCEO)3V
- Max Collector Current4A
- DC Current Gain (hFE) (Min) @ Ic, Vce750 @ 2A 3V
- Current - Collector Cutoff (Max)100μA
- Vce Saturation (Max) @ Ib, Ic3V @ 40mA, 4A
- Collector Emitter Breakdown Voltage40V
- Voltage - Collector Emitter Breakdown (Max)40V
- Current - Collector (Ic) (Max)4A
- Collector Base Voltage (VCBO)40V
- Emitter Base Voltage (VEBO)5V
- Continuous Collector Current4A
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
2N6034 Overview
In this device, the DC current gain is 750 @ 2A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 40mA, 4A.Maintaining the continuous collector voltage at 4A is essential for high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-4A).Supplier device package TO-225AA comes with the product.The device exhibits a collector-emitter breakdown at 40V.Maximum collector currents can be below 4A volts.
2N6034 Features
the DC current gain for this device is 750 @ 2A 3V
the vce saturation(Max) is 3V @ 40mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
the supplier device package of TO-225AA
2N6034 Applications
There are a lot of ON Semiconductor
2N6034 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 750 @ 2A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 40mA, 4A.Maintaining the continuous collector voltage at 4A is essential for high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-4A).Supplier device package TO-225AA comes with the product.The device exhibits a collector-emitter breakdown at 40V.Maximum collector currents can be below 4A volts.
2N6034 Features
the DC current gain for this device is 750 @ 2A 3V
the vce saturation(Max) is 3V @ 40mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
the supplier device package of TO-225AA
2N6034 Applications
There are a lot of ON Semiconductor
2N6034 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2N6034 More Descriptions
4.0 A, 40 V PNP Darlington Bipolar Power Transistor
Power Bipolar Transistor, 4A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin
TRANS PNP DARL 40V 4A TO225AA
Power Bipolar Transistor, 4A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin
TRANS PNP DARL 40V 4A TO225AA
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