ON Semiconductor 2N5686G
- Part Number:
- 2N5686G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2465584-2N5686G
- Description:
- TRANS NPN 80V 50A TO3
- Datasheet:
- 2N5686G
ON Semiconductor 2N5686G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2N5686G.
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time2 Weeks
- Mounting TypeThrough Hole
- Package / CaseTO-204AE
- Surface MountNO
- Number of Pins2
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~200°C TJ
- PackagingTray
- Published2006
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- SubcategoryOther Transistors
- Voltage - Rated DC80V
- Max Power Dissipation300W
- Terminal PositionBOTTOM
- Terminal FormPIN/PEG
- Peak Reflow Temperature (Cel)260
- Current Rating50A
- Frequency2MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part Number2N5686
- Pin Count2
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation300W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product2MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)80V
- Max Collector Current50A
- DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 25A 2V
- Current - Collector Cutoff (Max)1mA
- Vce Saturation (Max) @ Ib, Ic5V @ 10A, 50A
- Collector Emitter Breakdown Voltage80V
- Transition Frequency2MHz
- Collector Emitter Saturation Voltage1V
- Collector Base Voltage (VCBO)80V
- Emitter Base Voltage (VEBO)5V
- hFE Min15
- Height8.51mm
- Length38.86mm
- Width26.67mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2N5686G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 15 @ 25A 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 5V @ 10A, 50A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 50A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 2MHz.During maximum operation, collector current can be as low as 50A volts.
2N5686G Features
the DC current gain for this device is 15 @ 25A 2V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 5V @ 10A, 50A
the emitter base voltage is kept at 5V
the current rating of this device is 50A
a transition frequency of 2MHz
2N5686G Applications
There are a lot of ON Semiconductor
2N5686G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 15 @ 25A 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 5V @ 10A, 50A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 50A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 2MHz.During maximum operation, collector current can be as low as 50A volts.
2N5686G Features
the DC current gain for this device is 15 @ 25A 2V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 5V @ 10A, 50A
the emitter base voltage is kept at 5V
the current rating of this device is 50A
a transition frequency of 2MHz
2N5686G Applications
There are a lot of ON Semiconductor
2N5686G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2N5686G More Descriptions
50 A, 80 V NPN Bipolar Power Transistor
Trans GP BJT NPN 80V 50A 300000mW 3-Pin(2 Tab) TO-204 Tray
Power Bipolar Transistor, 50A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin
Transistor, Bipolar,Si,NPN,High Current, Power,VCEO 80VDC,IC 50A,PD 300mW,hFE 5 | ON Semiconductor 2N5686G
2N Series 80 V 50 A High-Current Complementary Silicon Power Transistor - TO-204
ON SEMICONDUCTOR - 2N5686G - Transistor Bipolar (BJT) Individual, Prop¨®sito General, NPN, 80 V, 2 MHz, 300 mW, 50 A, 2 hFE
TRANS, BIPOL, NPN, 80V, TO-204AA; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 2MHz; Power Dissipation Pd: 300W; DC Collector Current: 50A; DC Current Gain hFE: 15hFE; Transistor
Trans GP BJT NPN 80V 50A 300000mW 3-Pin(2 Tab) TO-204 Tray
Power Bipolar Transistor, 50A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin
Transistor, Bipolar,Si,NPN,High Current, Power,VCEO 80VDC,IC 50A,PD 300mW,hFE 5 | ON Semiconductor 2N5686G
2N Series 80 V 50 A High-Current Complementary Silicon Power Transistor - TO-204
ON SEMICONDUCTOR - 2N5686G - Transistor Bipolar (BJT) Individual, Prop¨®sito General, NPN, 80 V, 2 MHz, 300 mW, 50 A, 2 hFE
TRANS, BIPOL, NPN, 80V, TO-204AA; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 2MHz; Power Dissipation Pd: 300W; DC Collector Current: 50A; DC Current Gain hFE: 15hFE; Transistor
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