2N5686G

ON Semiconductor 2N5686G

Part Number:
2N5686G
Manufacturer:
ON Semiconductor
Ventron No:
2465584-2N5686G
Description:
TRANS NPN 80V 50A TO3
ECAD Model:
Datasheet:
2N5686G

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Specifications
ON Semiconductor 2N5686G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2N5686G.
  • Lifecycle Status
    ACTIVE (Last Updated: 2 days ago)
  • Factory Lead Time
    2 Weeks
  • Mounting Type
    Through Hole
  • Package / Case
    TO-204AE
  • Surface Mount
    NO
  • Number of Pins
    2
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~200°C TJ
  • Packaging
    Tray
  • Published
    2006
  • JESD-609 Code
    e1
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Silver/Copper (Sn/Ag/Cu)
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    80V
  • Max Power Dissipation
    300W
  • Terminal Position
    BOTTOM
  • Terminal Form
    PIN/PEG
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    50A
  • Frequency
    2MHz
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    2N5686
  • Pin Count
    2
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    300W
  • Case Connection
    COLLECTOR
  • Transistor Application
    SWITCHING
  • Gain Bandwidth Product
    2MHz
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    80V
  • Max Collector Current
    50A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    15 @ 25A 2V
  • Current - Collector Cutoff (Max)
    1mA
  • Vce Saturation (Max) @ Ib, Ic
    5V @ 10A, 50A
  • Collector Emitter Breakdown Voltage
    80V
  • Transition Frequency
    2MHz
  • Collector Emitter Saturation Voltage
    1V
  • Collector Base Voltage (VCBO)
    80V
  • Emitter Base Voltage (VEBO)
    5V
  • hFE Min
    15
  • Height
    8.51mm
  • Length
    38.86mm
  • Width
    26.67mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
2N5686G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 15 @ 25A 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 5V @ 10A, 50A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 50A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 2MHz.During maximum operation, collector current can be as low as 50A volts.

2N5686G Features
the DC current gain for this device is 15 @ 25A 2V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 5V @ 10A, 50A
the emitter base voltage is kept at 5V
the current rating of this device is 50A
a transition frequency of 2MHz


2N5686G Applications
There are a lot of ON Semiconductor
2N5686G applications of single BJT transistors.


Inverter
Interface
Driver
Muting
2N5686G More Descriptions
50 A, 80 V NPN Bipolar Power Transistor
Trans GP BJT NPN 80V 50A 300000mW 3-Pin(2 Tab) TO-204 Tray
Power Bipolar Transistor, 50A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin
Transistor, Bipolar,Si,NPN,High Current, Power,VCEO 80VDC,IC 50A,PD 300mW,hFE 5 | ON Semiconductor 2N5686G
2N Series 80 V 50 A High-Current Complementary Silicon Power Transistor - TO-204
ON SEMICONDUCTOR - 2N5686G - Transistor Bipolar (BJT) Individual, Prop¨®sito General, NPN, 80 V, 2 MHz, 300 mW, 50 A, 2 hFE
TRANS, BIPOL, NPN, 80V, TO-204AA; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 2MHz; Power Dissipation Pd: 300W; DC Collector Current: 50A; DC Current Gain hFE: 15hFE; Transistor
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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