STMicroelectronics 2N5415
- Part Number:
- 2N5415
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2465917-2N5415
- Description:
- TRANS PNP 200V 1A TO-39
- Datasheet:
- TN5415A 2N5415,16 2N5415,16 Datasheet
STMicroelectronics 2N5415 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics 2N5415.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-205AD, TO-39-3 Metal Can
- Number of Pins3
- Weight226.796185g
- PackagingTube
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Max Operating Temperature200°C
- Min Operating Temperature-65°C
- SubcategoryOther Transistors
- Voltage - Rated DC-200V
- Max Power Dissipation1W
- Terminal PositionBOTTOM
- Terminal FormWIRE
- Current Rating-1A
- Frequency15MHz
- Base Part Number2N54
- Number of Elements1
- Voltage300V
- Element ConfigurationSingle
- Current200mA
- Power Dissipation1W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product15MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)200V
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 50mA 10V
- Current - Collector Cutoff (Max)50μA
- Vce Saturation (Max) @ Ib, Ic2.5V @ 5mA, 50mA
- Collector Emitter Breakdown Voltage200V
- Transition Frequency15MHz
- Collector Emitter Saturation Voltage-2.5V
- Collector Base Voltage (VCBO)200V
- Emitter Base Voltage (VEBO)4V
- hFE Min30
- Collector-Base Capacitance-Max25pF
- Diameter9.4mm
- Height6.6mm
- Length9.4mm
- Width9.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2N5415 Description
The 2N5415 is a -200V Silicon PNP Epitaxial Planar High Voltage Transistor that can be used in both consumer and industrial applications. The transistor is well-suited for use as a driver in high-voltage, low-current inverters, as well as switching and series regulators.
2N5415 Features Collector-base voltage(Vcbo = -200V)
Emitter-base voltage(Vebo = -4V)
Multicomp Pro products are rated 4.6 out of 5 stars
12-month limited warranty *view Terms & Conditions for details
96% of customers would recommend to a friend
2N5415 Applications Industrial
Consumer Electronics
General-purpose transistors for low power applications require high-frequency switching.
Low package profile
Military and other high-reliability applications
2N5415 Features Collector-base voltage(Vcbo = -200V)
Emitter-base voltage(Vebo = -4V)
Multicomp Pro products are rated 4.6 out of 5 stars
12-month limited warranty *view Terms & Conditions for details
96% of customers would recommend to a friend
2N5415 Applications Industrial
Consumer Electronics
General-purpose transistors for low power applications require high-frequency switching.
Low package profile
Military and other high-reliability applications
2N5415 More Descriptions
Bulk Through Hole SINGLE HIGH RELIABILITY Bipolar (BJT) Transistor 1A 750mW 200V 200C
Trans GP BJT PNP 200V 1A 750mW 3-Pin TO-5 Bag
Bipolar Transistors - BJT Power BJT
Power Bjt To-5 Rohs Compliant: Yes |Microchip 2N5415
Trans GP BJT PNP 200V 1A 750mW 3-Pin TO-5 Bag
Bipolar Transistors - BJT Power BJT
Power Bjt To-5 Rohs Compliant: Yes |Microchip 2N5415
The three parts on the right have similar specifications to 2N5415.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsWeightPackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Operating TemperatureMin Operating TemperatureSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormCurrent RatingFrequencyBase Part NumberNumber of ElementsVoltageElement ConfigurationCurrentPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinCollector-Base Capacitance-MaxDiameterHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeOperating TemperaturePower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionSupplier Device PackagePolarityView Compare
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2N5415Through HoleThrough HoleTO-205AD, TO-39-3 Metal Can3226.796185gTubee3yesObsolete1 (Unlimited)3EAR99Matte Tin (Sn)200°C-65°COther Transistors-200V1WBOTTOMWIRE-1A15MHz2N541300VSingle200mA1WCOLLECTORSWITCHING15MHzPNPPNP200V1A30 @ 50mA 10V50μA2.5V @ 5mA, 50mA200V15MHz-2.5V200V4V3025pF9.4mm6.6mm9.4mm9.4mmNo SVHCNoROHS3 CompliantLead Free--------
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-Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)--Tape & Box (TB)--Obsolete1 (Unlimited)------------2N5400---------PNP--40 @ 10mA 5V100nA ICBO500mV @ 5mA, 50mA----------------55°C~150°C TJ625mW120V600mA400MHz--
-
Through HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)3178.2mgTape & Box (TB)--Obsolete1 (Unlimited)---150°C-55°C--160V625mW---600mA400MHz2N54011-Single-625mW--300MHz-PNP500mV600mA60 @ 10mA 5V50nA ICBO500mV @ 5mA, 50mA150V---160V-5V60-------RoHS CompliantLead Free-55°C~150°C TJ625mW150V600mA400MHzTO-92-3PNP
-
-Through HoleTO-226-3, TO-92-3 (TO-226AA)--Bulk--Obsolete1 (Unlimited)------------2N5401---------PNP--60 @ 10mA 5V50nA ICBO500mV @ 5mA, 50mA----------------55°C~150°C TJ625mW150V600mA400MHz--
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