Central Semiconductor Corp 2N5401
- Part Number:
- 2N5401
- Manufacturer:
- Central Semiconductor Corp
- Ventron No:
- 2845183-2N5401
- Description:
- TRANS PNP 150V 0.6A TO-92
- Datasheet:
- 2N5400-01
Central Semiconductor Corp 2N5401 technical specifications, attributes, parameters and parts with similar specifications to Central Semiconductor Corp 2N5401.
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 2 days ago)
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA)
- Number of Pins3
- Supplier Device PackageTO-92-3
- Operating Temperature-55°C~150°C TJ
- PackagingBulk
- Published1996
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Voltage - Rated DC-150V
- Max Power Dissipation625mW
- Current Rating-600mA
- Base Part Number2N5401
- PolarityPNP
- Element ConfigurationSingle
- Power Dissipation625mW
- Power - Max625mW
- Gain Bandwidth Product400MHz
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)500mV
- Max Collector Current600mA
- DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 10mA 5V
- Current - Collector Cutoff (Max)50nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 5mA, 50mA
- Collector Emitter Breakdown Voltage150V
- Voltage - Collector Emitter Breakdown (Max)150V
- Current - Collector (Ic) (Max)600mA
- Max Frequency300MHz
- Collector Emitter Saturation Voltage500mV
- Frequency - Transition300MHz
- Collector Base Voltage (VCBO)-160V
- Emitter Base Voltage (VEBO)5V
- hFE Min60
- Height5.33mm
- Length5.2mm
- Width4.19mm
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
2N5401 Description
2N5401 is intended for use in high-voltage situations where the load consumes very little power (i.e. Current drawn by load is low). Telephone networks contain these types of circuits. It can also be utilized for high voltage loads when you need a simple switching device. The component is very inexpensive and simple to use.
2N5401 Features
Pb-free packaging is available.
Collector breakdown voltage is high.
Up to 100 times DC Current Gain (hFE)
150V maximum voltage between collector and emitter
Trough collector maximum current allowed: 600mA
160 V maximum voltage between collector and base
5V maximum voltage between base and emitter
-55°C to 150°C operating temperature range
0.62 W maximum power dissipation
2N5401 Applications
Switching and amplification for general use
Applications for telephony
Application of high voltage
2N5401 is intended for use in high-voltage situations where the load consumes very little power (i.e. Current drawn by load is low). Telephone networks contain these types of circuits. It can also be utilized for high voltage loads when you need a simple switching device. The component is very inexpensive and simple to use.
2N5401 Features
Pb-free packaging is available.
Collector breakdown voltage is high.
Up to 100 times DC Current Gain (hFE)
150V maximum voltage between collector and emitter
Trough collector maximum current allowed: 600mA
160 V maximum voltage between collector and base
5V maximum voltage between base and emitter
-55°C to 150°C operating temperature range
0.62 W maximum power dissipation
2N5401 Applications
Switching and amplification for general use
Applications for telephony
Application of high voltage
2N5401 More Descriptions
Bipolar Transistor, TO-92, 150V, 600mA, PNP
Trans GP BJT PNP 150V 0.6A 625mW 3-Pin TO-92 Ammo
French Electronic Distributor since 1988
Trans GP BJT PNP 150V 0.6A 625mW 3-Pin TO-92 Ammo
French Electronic Distributor since 1988
The three parts on the right have similar specifications to 2N5401.
-
ImagePart NumberManufacturerLifecycle StatusMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureVoltage - Rated DCMax Power DissipationCurrent RatingBase Part NumberPolarityElement ConfigurationPower DissipationPower - MaxGain Bandwidth ProductTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Max FrequencyCollector Emitter Saturation VoltageFrequency - TransitionCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthRoHS StatusLead FreeWeightFrequencyNumber of ElementsView Compare
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2N5401LAST SHIPMENTS (Last Updated: 2 days ago)Through HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA)3TO-92-3-55°C~150°C TJBulk1996Obsolete1 (Unlimited)150°C-55°C-150V625mW-600mA2N5401PNPSingle625mW625mW400MHzPNP500mV600mA60 @ 10mA 5V50nA ICBO500mV @ 5mA, 50mA150V150V600mA300MHz500mV300MHz-160V5V605.33mm5.2mm4.19mmNon-RoHS CompliantContains Lead----
-
-Through HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)3TO-92-3-55°C~150°C TJTape & Box (TB)-Obsolete1 (Unlimited)150°C-55°C-160V625mW-600mA2N5401PNPSingle625mW625mW300MHzPNP500mV600mA60 @ 10mA 5V50nA ICBO500mV @ 5mA, 50mA150V150V600mA--400MHz-160V-5V60---RoHS CompliantLead Free178.2mg400MHz1
-
--Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)-TO-92-3-55°C~150°C TJTape & Reel (TR)-Obsolete1 (Unlimited)---------625mW-PNP--60 @ 10mA 5V50nA ICBO500mV @ 5mA, 50mA-150V600mA--400MHz------Non-RoHS Compliant----
-
--Through HoleTO-226-3, TO-92-3 (TO-226AA)---55°C~150°C TJBulk-Obsolete1 (Unlimited)-----2N5401---625mW-PNP--60 @ 10mA 5V50nA ICBO500mV @ 5mA, 50mA-150V600mA--400MHz-----------
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