2N5322

Central Semiconductor Corp 2N5322

Part Number:
2N5322
Manufacturer:
Central Semiconductor Corp
Ventron No:
3813416-2N5322
Description:
TRANS PNP 75V 2A TO-39
ECAD Model:
Datasheet:
2N5/FTSO5/MPS5

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Specifications
Central Semiconductor Corp 2N5322 technical specifications, attributes, parameters and parts with similar specifications to Central Semiconductor Corp 2N5322.
  • Mounting Type
    Through Hole
  • Package / Case
    TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package
    TO-39
  • Packaging
    Bulk
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Base Part Number
    2N5322
  • Power - Max
    10W
  • Transistor Type
    PNP
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    30 @ 500mA 4V
  • Vce Saturation (Max) @ Ib, Ic
    700mV @ 50mA, 50mA
  • Voltage - Collector Emitter Breakdown (Max)
    75V
  • Current - Collector (Ic) (Max)
    2A
  • RoHS Status
    Non-RoHS Compliant
Description
2N5322 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 30 @ 500mA 4V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is no device package available from the supplier for this product.Single BJT transistor shows a 75V maximal voltage - Collector EmSingle BJT transistorter Breakdown.

2N5322 Features
the DC current gain for this device is 30 @ 500mA 4V
the vce saturation(Max) is 700mV @ 50mA, 50mA
the supplier device package of TO-39


2N5322 Applications
There are a lot of ON Semiconductor
2N5322 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
2N5322 More Descriptions
Trans GP BJT PNP 75V 2A 10000mW 3-Pin TO-5
1200 mA 75 V PNP Si SMALL SIGNAL TRANSISTOR TO-39
Power Bjt To-5 Rohs Compliant: Yes |Microchip 2N5322
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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