Central Semiconductor Corp 2N5322
- Part Number:
- 2N5322
- Manufacturer:
- Central Semiconductor Corp
- Ventron No:
- 3813416-2N5322
- Description:
- TRANS PNP 75V 2A TO-39
- Datasheet:
- 2N5/FTSO5/MPS5
Central Semiconductor Corp 2N5322 technical specifications, attributes, parameters and parts with similar specifications to Central Semiconductor Corp 2N5322.
- Mounting TypeThrough Hole
- Package / CaseTO-205AD, TO-39-3 Metal Can
- Supplier Device PackageTO-39
- PackagingBulk
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Base Part Number2N5322
- Power - Max10W
- Transistor TypePNP
- DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 500mA 4V
- Vce Saturation (Max) @ Ib, Ic700mV @ 50mA, 50mA
- Voltage - Collector Emitter Breakdown (Max)75V
- Current - Collector (Ic) (Max)2A
- RoHS StatusNon-RoHS Compliant
2N5322 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 30 @ 500mA 4V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is no device package available from the supplier for this product.Single BJT transistor shows a 75V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
2N5322 Features
the DC current gain for this device is 30 @ 500mA 4V
the vce saturation(Max) is 700mV @ 50mA, 50mA
the supplier device package of TO-39
2N5322 Applications
There are a lot of ON Semiconductor
2N5322 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 30 @ 500mA 4V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is no device package available from the supplier for this product.Single BJT transistor shows a 75V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
2N5322 Features
the DC current gain for this device is 30 @ 500mA 4V
the vce saturation(Max) is 700mV @ 50mA, 50mA
the supplier device package of TO-39
2N5322 Applications
There are a lot of ON Semiconductor
2N5322 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2N5322 More Descriptions
Trans GP BJT PNP 75V 2A 10000mW 3-Pin TO-5
1200 mA 75 V PNP Si SMALL SIGNAL TRANSISTOR TO-39
Power Bjt To-5 Rohs Compliant: Yes |Microchip 2N5322
1200 mA 75 V PNP Si SMALL SIGNAL TRANSISTOR TO-39
Power Bjt To-5 Rohs Compliant: Yes |Microchip 2N5322
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