Fairchild/ON Semiconductor 2N5210TA

Name: 2N5210TA
Brand: Fairchild/ON Semiconductor
SKU: 2464165-2N5210TA
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: 2N5210TA

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2464165-2N5210TA

Description:: TRANS NPN 50V 0.1A TO-92

ECAD Model:

Datasheet:: 2N5210/MMBT5210

Specifications

Fairchild/ON Semiconductor 2N5210TA technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor 2N5210TA.

Lifecycle Status
LAST SHIPMENTS (Last Updated: 1 week ago)
Factory Lead Time
6 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins
3
Weight
240mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Box (TB)
Published
2002
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
50V
Max Power Dissipation
625mW
Terminal Position
BOTTOM
Current Rating
100mA
Frequency
30MHz
Base Part Number
2N5210
Number of Elements
1
Element Configuration
Single
Power Dissipation
625mW
Transistor Application
AMPLIFIER
Gain Bandwidth Product
30MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
50V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 100μA 5V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
700mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage
50V
Transition Frequency
30MHz
Collector Emitter Saturation Voltage
700mV
Max Breakdown Voltage
45V
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
4.5V
hFE Min
200
Height
5.33mm
Length
5.2mm
Width
4.19mm
Radiation Hardening
No
RoHS Status
RoHS Compliant
Lead Free
Lead Free

Description

2N5210TA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 100μA 5V.The collector emitter saturation voltage is 700mV, which allows for maximum design flexibility.When VCE saturation is 700mV @ 1mA, 10mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 4.5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 100mA.In the part, the transition frequency is 30MHz.This device can take an input voltage of 45V volts before it breaks down.A maximum collector current of 100mA volts can be achieved.

2N5210TA Features
the DC current gain for this device is 200 @ 100μA 5V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 1mA, 10mA
the emitter base voltage is kept at 4.5V
the current rating of this device is 100mA
a transition frequency of 30MHz

2N5210TA Applications
There are a lot of ON Semiconductor
2N5210TA applications of single BJT transistors.

Inverter
Interface
Driver
Muting

2N5210TA More Descriptions

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Transistor 2N5210 NPN General Purpose Amplifier 100mA TO-92
Transistor GP BJT NPN 50V 0.1A 3-Pin TO-92 Ammo - Ammo Pack
TRANSISTOR,BJT,NPN,50V V(BR)CEO,50MA I(C),TO-92
Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin
This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA.

Product Comparison

The three parts on the right have similar specifications to 2N5210TA.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Voltage - Rated DC

Max Power Dissipation

Terminal Position

Current Rating

Frequency

Base Part Number

Number of Elements

Element Configuration

Power Dissipation

Transistor Application

Gain Bandwidth Product

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Max Breakdown Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Height

Length

Width

Radiation Hardening

RoHS Status

Lead Free

Max Operating Temperature

Min Operating Temperature

Additional Feature

HTS Code

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Polarity

Power Dissipation-Max

DC Current Gain-Min (hFE)

Power - Max

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Frequency - Transition

Operating Temperature (Max)

Continuous Collector Current

View Compare
2N5210TA

Fairchild/ON Semiconductor

LAST SHIPMENTS (Last Updated: 1 week ago)

6 Weeks

Through Hole

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

3

240mg

SILICON

-55°C~150°C TJ

Tape & Box (TB)

2002

e3

yes

Obsolete

1 (Unlimited)

3

EAR99

Tin (Sn)

Other Transistors

50V

625mW

BOTTOM

100mA

30MHz

2N5210

1

Single

625mW

AMPLIFIER

30MHz

NPN

NPN

50V

100mA

200 @ 100μA 5V

50nA ICBO

700mV @ 1mA, 10mA

50V

30MHz

700mV

45V

50V

4.5V

200

5.33mm

5.2mm

4.19mm

No

RoHS Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
2N5232A

Central Semiconductor Corp

-

8 Weeks

Through Hole

-

TO-92

-

-

-

-

-

2012

e0

no

Active

-

3

EAR99

Tin/Lead (Sn/Pb)

Other Transistors

-

-

BOTTOM

-

-

-

1

Single

-

AMPLIFIER

-

-

-

125mV

100mA

-

-

-

50V

-

-

-

70V

5V

250

-

-

-

-

RoHS Compliant

-

150°C

-65°C

LOW NOISE

8541.21.00.95

NOT SPECIFIED

NOT SPECIFIED

3

O-PBCY-T3

Not Qualified

NPN

625mW

250

-

-

-

-

-

-

2N5210TA vs 2N5232A
2N5210_S00Z

Fairchild/ON Semiconductor

-

-

-

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

-

-

-

-55°C~150°C TJ

Bulk

-

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

-

-

2N5210

-

-

-

-

-

-

NPN

-

-

200 @ 100μA 5V

50nA ICBO

700mV @ 1mA, 10mA

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

625mW

50V

100mA

30MHz

-

-

2N5210TA vs 2N5210_S00Z
2N5210

Central Semiconductor Corp

-

8 Weeks

Through Hole

-

TO-92

-

-

SILICON

-

Bulk

2012

e0

no

Active

-

3

EAR99

Tin/Lead (Sn/Pb)

Other Transistors

-

-

BOTTOM

-

-

-

1

Single

-

-

30MHz

-

-

700mV

50mA

-

-

-

50V

30MHz

700mV

-

50V

4.5V

200

-

-

-

-

RoHS Compliant

-

-

-

LOW NOISE

8541.21.00.95

NOT SPECIFIED

NOT SPECIFIED

3

O-PBCY-T3

Not Qualified

NPN

350mW

200

-

-

-

30MHz

150°C

100mA

2N5210TA vs 2N5210

Certification

Related parts for 2N5210TA

2N5209

Central Semiconductor Corp

TRANS NPN 50V 0.05A TO-92
2N5232A

Central Semiconductor Corp

TRANS NPN 50V 0.1A TO-92
2N5210_S00Z

Fairchild/ON Semiconductor

TRANS NPN 50V 0.1A TO-92
2N5210

Central Semiconductor Corp

TRANS NPN 50V 0.05A TO-92

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2N5210T~~(3)~~
2N5210~~(8)~~
2N521~~(8)~~
2N52~~(34)~~
2N5~~(75)~~

Part Number	Manufacturers	Description	Stock	Price
2N5210TA DISTI #V36:1790_06297989	ON Semiconductor	N/50V/50MA/200-600	12000	2000 $0.0371 10000 $0.031 24000 $0.0289 50000 $0.0267 100000 $0.0237
2N5210TA DISTI #V72:2272_06297989	ON Semiconductor	N/50V/50MA/200-600	12000	1 $0.247 10 $0.1637 25 $0.162 100 $0.0673 250 $0.0666 500 $0.0658 1000 $0.0446 3000 $0.0345 6000 $0.0341
2N5210TA DISTI #2N5210TAFSTB-ND	ON Semiconductor	TRANS NPN 50V 0.1A TO-92 RoHS: Compliant	0
2N5210TA DISTI #2N5210TAFSCT-ND	ON Semiconductor	TRANS NPN 50V 0.1A TO-92 RoHS: Compliant	0
2N5210TAR DISTI #2N5210TAR-ND	ON Semiconductor	TRANS NPN 50V 0.1A TO-92 RoHS: Compliant	0
2N5210TA DISTI #30304370	ON Semiconductor	N/50V/50MA/200-600	26000	391 $0.0399 10000 $0.0333 24000 $0.0311 50000 $0.0287 100000 $0.0255
2N5210TA DISTI #30180457	ON Semiconductor	N/50V/50MA/200-600	12000	298 $0.0716 500 $0.0707 1000 $0.0479 3000 $0.0371 6000 $0.0367
2N5210TA DISTI #31333840	ON Semiconductor	N/50V/50MA/200-600	12000	2000 $0.0399 10000 $0.0333 24000 $0.0311 50000 $0.0287 100000 $0.0255
2N5210TA DISTI #2N5210TA	ON Semiconductor	Trans GP BJT NPN 50V 0.1A 3-Pin TO-92 Ammo - Ammo RoHS: Compliant	8000
2N5210TA DISTI #2N5210TA	ON Semiconductor	Trans GP BJT NPN 50V 0.1A 3-Pin TO-92 Ammo - Bulk RoHS: Compliant	0	12500 $0.02614 25000 $0.02597 37500 $0.02564 62500 $0.02532 125000 $0.02469
2N5210TA DISTI #512-2N5210TA	ON Semiconductor	Bipolar Transistors - BJT NPN Transistor General P RoHS: Compliant	13980	1 $0.26 10 $0.174 100 $0.073 1000 $0.05 2000 $0.039 10000 $0.033 24000 $0.031 50000 $0.029 100000 $0.026
2N5210TAR DISTI #512-2N5210TAR	ON Semiconductor	Bipolar Transistors - BJT NPN Transistor General P RoHS: Compliant	0
2N5210TA DISTI #	Fairchild Semiconductor Corporation	Small Signal Bipolar Transistor, 0.1A I(C), 50V V( RoHS: Compliant	108846	1 $0.03 25 $0.03 100 $0.03 500 $0.03 1000 $0.03
2N5210TA DISTI #	Fairchild Semiconductor Corporation		1575	1 $0.55 24 $0.2475 203 $0.165
2N5210TA DISTI #8051093	ON Semiconductor	TRANSISTOR FAIRCHILD 2N5210TA, PK	4600	200 $0.065 1000 $0.06 2000 $0.057

Fairchild/ON Semiconductor 2N5210TA

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