STMicroelectronics 2N5195

Name: 2N5195
Brand: STMicroelectronics
SKU: 2465880-2N5195
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: 2N5195

Manufacturer:: STMicroelectronics

Ventron No:: 2465880-2N5195

Description:: TRANS PNP 80V 4A SOT-32

ECAD Model:

Datasheet:: 2N5195

Specifications

STMicroelectronics 2N5195 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics 2N5195.

Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
-80V
Max Power Dissipation
40W
Current Rating
-4A
Frequency
2MHz
Base Part Number
2N51
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
40W
Case Connection
ISOLATED
Transistor Application
SWITCHING
Gain Bandwidth Product
2MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
4A
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 1.5A 2V
Current - Collector Cutoff (Max)
1mA
Vce Saturation (Max) @ Ib, Ic
1.2V @ 1A, 4A
Collector Emitter Breakdown Voltage
80V
Transition Frequency
2MHz
Collector Emitter Saturation Voltage
-1.2V
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
5V
hFE Min
20
Height
6.35mm
Length
25.4mm
Width
6.35mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

2N5195 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 1.5A 2V.With a collector emitter saturation voltage of -1.2V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.2V @ 1A, 4A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -4A.A transition frequency of 2MHz is present in the part.Collector current can be as low as 4A volts at its maximum.

2N5195 Features
the DC current gain for this device is 20 @ 1.5A 2V
a collector emitter saturation voltage of -1.2V
the vce saturation(Max) is 1.2V @ 1A, 4A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
a transition frequency of 2MHz

2N5195 Applications
There are a lot of STMicroelectronics
2N5195 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

2N5195 More Descriptions

Transistor GP BJT PNP 80V 4A 3-Pin TO-126Avnet Japan
Transistor, Bipolar, Pnp, 80V, 4A, To-126-3; Transistor Polarity:Pnp; Collector Emitter Voltage Max:80V; Continuous Collector Current:4A; Power Dissipation:40W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes |Multicomp Pro 2N5195

Certification