ON Semiconductor 2N5194G
- Part Number:
- 2N5194G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2463478-2N5194G
- Description:
- TRANS PNP 60V 4A TO225AA
- Datasheet:
- 2N5194, 95
ON Semiconductor 2N5194G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2N5194G.
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 4 days ago)
- Factory Lead Time2 Weeks
- Mounting TypeThrough Hole
- Package / CaseTO-225AA, TO-126-3
- Surface MountNO
- Number of Pins3
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingBulk
- Published2000
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC-60V
- Max Power Dissipation40W
- Peak Reflow Temperature (Cel)260
- Current Rating-4A
- Frequency2MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part Number2N5194
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation40W
- Transistor ApplicationSWITCHING
- Halogen FreeHalogen Free
- Gain Bandwidth Product2MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)60V
- Max Collector Current4A
- DC Current Gain (hFE) (Min) @ Ic, Vce25 @ 1.5A 2V
- Current - Collector Cutoff (Max)1mA
- Vce Saturation (Max) @ Ib, Ic1.4V @ 1A, 4A
- Collector Emitter Breakdown Voltage60V
- Transition Frequency2MHz
- Collector Emitter Saturation Voltage1.4V
- Collector Base Voltage (VCBO)60V
- Emitter Base Voltage (VEBO)5V
- hFE Min25
- Height11.0998mm
- Length7.7978mm
- Width2.9972mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
2N5194G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 25 @ 1.5A 2V.The collector emitter saturation voltage is 1.4V, which allows for maximum design flexibility.When VCE saturation is 1.4V @ 1A, 4A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -4A.In the part, the transition frequency is 2MHz.A maximum collector current of 4A volts can be achieved.
2N5194G Features
the DC current gain for this device is 25 @ 1.5A 2V
a collector emitter saturation voltage of 1.4V
the vce saturation(Max) is 1.4V @ 1A, 4A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
a transition frequency of 2MHz
2N5194G Applications
There are a lot of ON Semiconductor
2N5194G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 25 @ 1.5A 2V.The collector emitter saturation voltage is 1.4V, which allows for maximum design flexibility.When VCE saturation is 1.4V @ 1A, 4A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -4A.In the part, the transition frequency is 2MHz.A maximum collector current of 4A volts can be achieved.
2N5194G Features
the DC current gain for this device is 25 @ 1.5A 2V
a collector emitter saturation voltage of 1.4V
the vce saturation(Max) is 1.4V @ 1A, 4A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
a transition frequency of 2MHz
2N5194G Applications
There are a lot of ON Semiconductor
2N5194G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2N5194G More Descriptions
4.0 A, 60 V PNP Bipolar Power Transistor
2N Series 60 V 4 A Through Hole Silicon PNP Power Transistor - TO-225
Trans GP BJT PNP 60V 4A 40000mW 3-Pin(3 Tab) TO-225 Box
ON SEMICONDUCTOR - 2N5194G - BIPOLAR TRANSISTOR, PNP -60V TO-225
Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin
TRANSISTOR, PNP, TO-225; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: 2MHz; Power Dissipation Pd: 40W; DC Collector Current: 4A; DC Current Gain hFE: 2hFE; Transistor Case Style: TO-225AA; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: 2NXXXX Series; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 600mV; Current Ic Continuous a Max: 4A; Current Ic hFE: 100mA; Gain Bandwidth ft Typ: 2MHz; Hfe Min: 10; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 150°C; Termination Type: Through Hole
2N Series 60 V 4 A Through Hole Silicon PNP Power Transistor - TO-225
Trans GP BJT PNP 60V 4A 40000mW 3-Pin(3 Tab) TO-225 Box
ON SEMICONDUCTOR - 2N5194G - BIPOLAR TRANSISTOR, PNP -60V TO-225
Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin
TRANSISTOR, PNP, TO-225; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: 2MHz; Power Dissipation Pd: 40W; DC Collector Current: 4A; DC Current Gain hFE: 2hFE; Transistor Case Style: TO-225AA; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: 2NXXXX Series; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 600mV; Current Ic Continuous a Max: 4A; Current Ic hFE: 100mA; Gain Bandwidth ft Typ: 2MHz; Hfe Min: 10; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 150°C; Termination Type: Through Hole
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