ON Semiconductor 2N5192G
- Part Number:
- 2N5192G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2845197-2N5192G
- Description:
- TRANS NPN 80V 4A TO225AA
- Datasheet:
- 2N5192G
ON Semiconductor 2N5192G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2N5192G.
- Lifecycle StatusACTIVE (Last Updated: 4 days ago)
- Factory Lead Time5 Weeks
- Mounting TypeThrough Hole
- Package / CaseTO-225AA, TO-126-3
- Surface MountNO
- Number of Pins3
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingBulk
- Published2000
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC80V
- Max Power Dissipation40W
- Peak Reflow Temperature (Cel)260
- Current Rating4A
- Frequency2MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part Number2N5192
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation40W
- Transistor ApplicationSWITCHING
- Halogen FreeHalogen Free
- Gain Bandwidth Product2MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)80V
- Max Collector Current4A
- DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 1.5A 2V
- Current - Collector Cutoff (Max)1mA
- Vce Saturation (Max) @ Ib, Ic1.4V @ 1A, 4A
- Collector Emitter Breakdown Voltage80V
- Transition Frequency2MHz
- Collector Emitter Saturation Voltage1.4V
- Collector Base Voltage (VCBO)80V
- Emitter Base Voltage (VEBO)5V
- hFE Min20
- Height11.0998mm
- Length7.7978mm
- Width2.9972mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2N5192G Overview
In this device, the DC current gain is 20 @ 1.5A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 1.4V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.4V @ 1A, 4A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (4A).2MHz is present in the transition frequency.Maximum collector currents can be below 4A volts.
2N5192G Features
the DC current gain for this device is 20 @ 1.5A 2V
a collector emitter saturation voltage of 1.4V
the vce saturation(Max) is 1.4V @ 1A, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 2MHz
2N5192G Applications
There are a lot of ON Semiconductor
2N5192G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 20 @ 1.5A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 1.4V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.4V @ 1A, 4A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (4A).2MHz is present in the transition frequency.Maximum collector currents can be below 4A volts.
2N5192G Features
the DC current gain for this device is 20 @ 1.5A 2V
a collector emitter saturation voltage of 1.4V
the vce saturation(Max) is 1.4V @ 1A, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 2MHz
2N5192G Applications
There are a lot of ON Semiconductor
2N5192G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2N5192G More Descriptions
4.0 A, 80 V NPN Bipolar Power Transistor
2N Series 80 V 4 A Through Hole Silicon NPN Power Transistor - TO-225
Trans GP BJT NPN 80V 4A 40000mW 3-Pin(3 Tab) TO-225 Box
Transistor, Bipolar,Si,NPN,Power,VCEO 80VDC,IC 4A,PD 40W,TO-225AA,VCBO 80VDC | ON Semiconductor 2N5192G
Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin
BIPOLAR Transistor, NPN, 80V TO-225; Tra; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V;
TRANSISTOR, BIPOL, NPN, 80V, TO-225-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 2MHz; Power Dissipation Pd: 40W; DC Collector Current: 4A; DC Current Gain hFE: 10hFE; Transist
Bipolar Transistor, Npn, 80V To-225; Transistor Polarity:Npn; Collector Emitter Voltage Max:80V; Continuous Collector Current:4A; Power Dissipation:40W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:2Mhz Rohs Compliant: Yes |Onsemi 2N5192G.
2N Series 80 V 4 A Through Hole Silicon NPN Power Transistor - TO-225
Trans GP BJT NPN 80V 4A 40000mW 3-Pin(3 Tab) TO-225 Box
Transistor, Bipolar,Si,NPN,Power,VCEO 80VDC,IC 4A,PD 40W,TO-225AA,VCBO 80VDC | ON Semiconductor 2N5192G
Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin
BIPOLAR Transistor, NPN, 80V TO-225; Tra; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V;
TRANSISTOR, BIPOL, NPN, 80V, TO-225-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 2MHz; Power Dissipation Pd: 40W; DC Collector Current: 4A; DC Current Gain hFE: 10hFE; Transist
Bipolar Transistor, Npn, 80V To-225; Transistor Polarity:Npn; Collector Emitter Voltage Max:80V; Continuous Collector Current:4A; Power Dissipation:40W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:2Mhz Rohs Compliant: Yes |Onsemi 2N5192G.
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
21 September 2023
Difference Between 2N2222 and BC547 Transistor
Ⅰ. What is 2N2222?Ⅱ. What is BC547?Ⅲ. 2N2222 vs BC547 symbolⅣ. 2N2222 vs BC547 technical parametersⅤ. 2N2222 vs BC547 pin comparisonⅥ. 2N2222 vs BC547 featuresⅦ. 2N2222 vs BC547... -
22 September 2023
Power Transistor IC LM317LZ: Symbol, Features and Package
Ⅰ. Overview of LM317LZⅡ. Symbol and Footprint of LM317LZⅢ. Technical parametersⅣ. Features of LM317LZⅤ. Pins and package of LM317LZⅥ. Advantages and disadvantages of LM317LZⅦ. How to optimize the... -
22 September 2023
LM301AN Operational Amplifier: Equivalent, Circuit and Package
Ⅰ. What is LM301AN?Ⅱ. Symbol, footprint and pin connection of LM301ANⅢ. Technical parametersⅣ. LM301AN tone control circuitⅤ. Features of LM301ANⅥ. What is the difference between LM301AN and LM709?Ⅶ.... -
25 September 2023
Get to Know the IRFB7545PBF Power MOSFET
Ⅰ. What is IRFB7545PBF?Ⅱ. Symbol and Footprint of IRFB7545PBFⅢ. Technical parametersⅣ. Features of IRFB7545PBFⅤ. Pinout and package of IRFB7545PBFⅥ. Application of IRFB7545PBFⅦ. How to use IRFB7545PBF?Ⅷ. How to...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.