2N5192G

ON Semiconductor 2N5192G

Part Number:
2N5192G
Manufacturer:
ON Semiconductor
Ventron No:
2845197-2N5192G
Description:
TRANS NPN 80V 4A TO225AA
ECAD Model:
Datasheet:
2N5192G

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Specifications
ON Semiconductor 2N5192G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2N5192G.
  • Lifecycle Status
    ACTIVE (Last Updated: 4 days ago)
  • Factory Lead Time
    5 Weeks
  • Mounting Type
    Through Hole
  • Package / Case
    TO-225AA, TO-126-3
  • Surface Mount
    NO
  • Number of Pins
    3
  • Weight
    4.535924g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~150°C TJ
  • Packaging
    Bulk
  • Published
    2000
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    80V
  • Max Power Dissipation
    40W
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    4A
  • Frequency
    2MHz
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    2N5192
  • Pin Count
    3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    40W
  • Transistor Application
    SWITCHING
  • Halogen Free
    Halogen Free
  • Gain Bandwidth Product
    2MHz
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    80V
  • Max Collector Current
    4A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    20 @ 1.5A 2V
  • Current - Collector Cutoff (Max)
    1mA
  • Vce Saturation (Max) @ Ib, Ic
    1.4V @ 1A, 4A
  • Collector Emitter Breakdown Voltage
    80V
  • Transition Frequency
    2MHz
  • Collector Emitter Saturation Voltage
    1.4V
  • Collector Base Voltage (VCBO)
    80V
  • Emitter Base Voltage (VEBO)
    5V
  • hFE Min
    20
  • Height
    11.0998mm
  • Length
    7.7978mm
  • Width
    2.9972mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
2N5192G Overview
In this device, the DC current gain is 20 @ 1.5A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 1.4V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.4V @ 1A, 4A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (4A).2MHz is present in the transition frequency.Maximum collector currents can be below 4A volts.

2N5192G Features
the DC current gain for this device is 20 @ 1.5A 2V
a collector emitter saturation voltage of 1.4V
the vce saturation(Max) is 1.4V @ 1A, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 2MHz


2N5192G Applications
There are a lot of ON Semiconductor
2N5192G applications of single BJT transistors.


Inverter
Interface
Driver
Muting
2N5192G More Descriptions
4.0 A, 80 V NPN Bipolar Power Transistor
2N Series 80 V 4 A Through Hole Silicon NPN Power Transistor - TO-225
Trans GP BJT NPN 80V 4A 40000mW 3-Pin(3 Tab) TO-225 Box
Transistor, Bipolar,Si,NPN,Power,VCEO 80VDC,IC 4A,PD 40W,TO-225AA,VCBO 80VDC | ON Semiconductor 2N5192G
Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin
BIPOLAR Transistor, NPN, 80V TO-225; Tra; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V;
TRANSISTOR, BIPOL, NPN, 80V, TO-225-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 2MHz; Power Dissipation Pd: 40W; DC Collector Current: 4A; DC Current Gain hFE: 10hFE; Transist
Bipolar Transistor, Npn, 80V To-225; Transistor Polarity:Npn; Collector Emitter Voltage Max:80V; Continuous Collector Current:4A; Power Dissipation:40W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:2Mhz Rohs Compliant: Yes |Onsemi 2N5192G.
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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