STMicroelectronics 2N5192

Name: 2N5192
Brand: STMicroelectronics
SKU: 2463829-2N5192
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: 2N5192

Manufacturer:: STMicroelectronics

Ventron No:: 2463829-2N5192

Description:: TRANS NPN 80V 4A SOT-32

ECAD Model:

Datasheet:: 2N5191,92

Specifications

STMicroelectronics 2N5192 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics 2N5192.

Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Number of Pins
3
Weight
90.718474mg
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
80V
Max Power Dissipation
40W
Current Rating
4A
Frequency
2MHz
Base Part Number
2N51
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
40W
Case Connection
ISOLATED
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
4A
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 1.5A 2V
Current - Collector Cutoff (Max)
1mA
Vce Saturation (Max) @ Ib, Ic
1.4V @ 1A, 4A
Collector Emitter Breakdown Voltage
80V
Transition Frequency
2MHz
Collector Emitter Saturation Voltage
-1.2V
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
5V
hFE Min
20
Height
11.05mm
Length
7.8mm
Width
2.9mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

2N5192 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 20 @ 1.5A 2V DC current gain.As it features a collector emitter saturation voltage of -1.2V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 2MHz in the part.When collector current reaches its maximum, it can reach 4A volts.

2N5192 Features
the DC current gain for this device is 20 @ 1.5A 2V
a collector emitter saturation voltage of -1.2V
the vce saturation(Max) is 1.4V @ 1A, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 2MHz

2N5192 Applications
There are a lot of STMicroelectronics
2N5192 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

2N5192 More Descriptions

Electronics 2N5192 Transistor NPN Silicon Bvceo=80V IC=4A TO-126 Case For Power lifier And Switching Circuits
TRANS NPN 80V 4A TO225AA
T-NPN SI- AF PONTE Electronics

Product Comparison

The three parts on the right have similar specifications to 2N5192.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Voltage - Rated DC

Max Power Dissipation

Current Rating

Frequency

Base Part Number

Pin Count

Number of Elements

Element Configuration

Power Dissipation

Case Connection

Transistor Application

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Supplier Device Package

Published

Max Operating Temperature

Min Operating Temperature

Breakdown Voltage

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Resistance

View Compare
2N5192

STMicroelectronics

Through Hole

Through Hole

TO-225AA, TO-126-3

3

90.718474mg

SILICON

150°C TJ

Tube

e3

Obsolete

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

Other Transistors

80V

40W

4A

2MHz

2N51

3

1

Single

40W

ISOLATED

SWITCHING

NPN

NPN

80V

4A

20 @ 1.5A 2V

1mA

1.4V @ 1A, 4A

80V

2MHz

-1.2V

80V

5V

20

11.05mm

7.8mm

2.9mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-
2N5116-E3

Vishay Siliconix

Through Hole

Through Hole

TO-206AA, TO-18-3 Metal Can

3

-

-

-

Tube

-

Obsolete

1 (Unlimited)

-

-

-

-

-

500mW

-50mA

-

-

-

-

Single

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Unknown

-

ROHS3 Compliant

-

TO-206AA (TO-18)

2004

200°C

-55°C

45V

-25mA

30V

150Ohm

2N5192 vs 2N5116-E3
2N5115JTXV02

Vishay Siliconix

Through Hole

Through Hole

TO-206AA, TO-18-3 Metal Can

3

-

-

-

Tube

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

-

-

-

-

Single

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

-

2016

200°C

-55°C

-

-

30V

-

2N5192 vs 2N5115JTXV02
2N5116JTXV02

Vishay Siliconix

Through Hole

Through Hole

TO-206AA, TO-18-3 Metal Can

3

-

-

-

Tube

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

-

-

-

-

Single

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

-

2009

200°C

-55°C

-

-

30V

-

2N5192 vs 2N5116JTXV02