Vishay Siliconix 2N5116-E3
- Part Number:
- 2N5116-E3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 3072215-2N5116-E3
- Description:
- JFET P-CH 30V TO-18
- Datasheet:
- 2N5116-E3
Vishay Siliconix 2N5116-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix 2N5116-E3.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-206AA, TO-18-3 Metal Can
- Number of Pins3
- Supplier Device PackageTO-206AA (TO-18)
- PackagingTube
- Published2004
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature200°C
- Min Operating Temperature-55°C
- Max Power Dissipation500mW
- Current Rating-50mA
- Element ConfigurationSingle
- Breakdown Voltage45V
- Continuous Drain Current (ID)-25mA
- Gate to Source Voltage (Vgs)30V
- Drain to Source Resistance150Ohm
- REACH SVHCUnknown
- RoHS StatusROHS3 Compliant
2N5116-E3 Overview
This product is manufactured by Vishay Siliconix and belongs to the category of obsolete (EOL) components. The images we provide are for reference only, for detailed product information please see specification sheet 2N5116-E3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of 2N5116-E3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Vishay Siliconix and belongs to the category of obsolete (EOL) components. The images we provide are for reference only, for detailed product information please see specification sheet 2N5116-E3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of 2N5116-E3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
2N5116-E3 More Descriptions
Compliant Through Hole Bulk Unknown TO-18-3 -50 mA 3 45 V
Transistors - JFET; Transistor Polarity:Dual P Channel; Package/Case:TO-206AA; Continuous Drain Current, Id:-25mA; Current Rating:-50mA; Gate-Source Breakdown Voltage:30V; Gate-Source Cutoff Voltage:4V; Leaded Process Compatible:Yes ;RoHS Compliant: Yes
JFET, P CHANNEL, 30V, TO-206AA-3; Breakdown Voltage Vbr: 30V; Zero Gate Voltage Drain Current Idss Min: -5mA; Zero Gate Voltage Drain Current Idss Max: -25mA; Gate-Source Cutoff Voltage Vgs(off) Max: 4V; Transistor Case Style: TO-206AA; Transistor Type: JFET; No. of Pins: 3 Pin; Operating Temperature Max: 200°C; Product Range: -; Automotive Qualification Standard: -; MSL: -
Transistors - JFET; Transistor Polarity:Dual P Channel; Package/Case:TO-206AA; Continuous Drain Current, Id:-25mA; Current Rating:-50mA; Gate-Source Breakdown Voltage:30V; Gate-Source Cutoff Voltage:4V; Leaded Process Compatible:Yes ;RoHS Compliant: Yes
JFET, P CHANNEL, 30V, TO-206AA-3; Breakdown Voltage Vbr: 30V; Zero Gate Voltage Drain Current Idss Min: -5mA; Zero Gate Voltage Drain Current Idss Max: -25mA; Gate-Source Cutoff Voltage Vgs(off) Max: 4V; Transistor Case Style: TO-206AA; Transistor Type: JFET; No. of Pins: 3 Pin; Operating Temperature Max: 200°C; Product Range: -; Automotive Qualification Standard: -; MSL: -
The three parts on the right have similar specifications to 2N5116-E3.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackagePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureMax Power DissipationCurrent RatingElement ConfigurationBreakdown VoltageContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source ResistanceREACH SVHCRoHS StatusWeightTransistor Element MaterialOperating TemperatureJESD-609 CodeNumber of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCFrequencyBase Part NumberPin CountNumber of ElementsPower DissipationCase ConnectionTransistor ApplicationPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthRadiation HardeningLead FreeView Compare
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2N5116-E3Through HoleThrough HoleTO-206AA, TO-18-3 Metal Can3TO-206AA (TO-18)Tube2004Obsolete1 (Unlimited)200°C-55°C500mW-50mASingle45V-25mA30V150OhmUnknownROHS3 Compliant-----------------------------------
-
Through HoleThrough HoleTO-206AA, TO-18-3 Metal Can3-Tube2016Obsolete1 (Unlimited)200°C-55°C--Single--30V--Non-RoHS Compliant----------------------------------
-
Through HoleThrough HoleTO-206AA, TO-18-3 Metal Can3-Tube2009Obsolete1 (Unlimited)200°C-55°C--Single--30V--Non-RoHS Compliant----------------------------------
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Through HoleThrough HoleTO-225AA, TO-126-33-Tube-Obsolete1 (Unlimited)--40W4ASingle----No SVHCROHS3 Compliant90.718474mgSILICON150°C TJe33EAR99Matte Tin (Sn)Other Transistors80V2MHz2N513140WISOLATEDSWITCHINGNPNNPN80V4A20 @ 1.5A 2V1mA1.4V @ 1A, 4A80V2MHz-1.2V80V5V2011.05mm7.8mm2.9mmNoLead Free
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