2N4918G

ON Semiconductor 2N4918G

Part Number:
2N4918G
Manufacturer:
ON Semiconductor
Ventron No:
2463634-2N4918G
Description:
TRANS PNP 40V 1A TO225AA
ECAD Model:
Datasheet:
2N4918G

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Specifications
ON Semiconductor 2N4918G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2N4918G.
  • Lifecycle Status
    ACTIVE (Last Updated: 2 days ago)
  • Factory Lead Time
    2 Weeks
  • Mounting Type
    Through Hole
  • Package / Case
    TO-225AA, TO-126-3
  • Surface Mount
    NO
  • Number of Pins
    3
  • Weight
    4.535924g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~150°C TJ
  • Packaging
    Bulk
  • Published
    2004
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -40V
  • Max Power Dissipation
    30W
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    1A
  • Frequency
    3MHz
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    2N4918
  • Pin Count
    3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    30W
  • Transistor Application
    SWITCHING
  • Halogen Free
    Halogen Free
  • Gain Bandwidth Product
    3MHz
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    40V
  • Max Collector Current
    3A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    30 @ 500mA 1V
  • Current - Collector Cutoff (Max)
    500μA
  • Vce Saturation (Max) @ Ib, Ic
    600mV @ 100mA, 1A
  • Collector Emitter Breakdown Voltage
    40V
  • Transition Frequency
    3MHz
  • Collector Emitter Saturation Voltage
    600mV
  • Collector Base Voltage (VCBO)
    40V
  • Emitter Base Voltage (VEBO)
    5V
  • hFE Min
    40
  • Height
    11.049mm
  • Length
    7.7216mm
  • Width
    2.667mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
2N4918G Overview
In this device, the DC current gain is 30 @ 500mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 600mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 100mA, 1A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (1A).3MHz is present in the transition frequency.Maximum collector currents can be below 3A volts.

2N4918G Features
the DC current gain for this device is 30 @ 500mA 1V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 3MHz


2N4918G Applications
There are a lot of ON Semiconductor
2N4918G applications of single BJT transistors.


Inverter
Interface
Driver
Muting
2N4918G More Descriptions
1.0 A, 40 V PNP Bipolar Power Transistor
Trans GP BJT PNP 40V 3A 30000mW 3-Pin(3 Tab) TO-225 Box
Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin
2N Series 40 V 1 A Medium-Power Plastic PNP Silicon Transistor - TO-225
. . . designed for driver circuits switching and amplifier applications. These high-performance plastic devices feature:
Transistor, Pnp, -40V, -3A, To-225-3; Transistor Polarity:Pnp; Collector Emitter Voltage V(Br)Ceo:-40V; Transition Frequency Ft:3Mhz; Power Dissipation Pd:30W; Dc Collector Current:-3A; Dc Current Gain Hfe:10Hfe; Transistor Case Rohs Compliant: Yes |Onsemi 2N4918G
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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