ON Semiconductor 2N4918G
- Part Number:
- 2N4918G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2463634-2N4918G
- Description:
- TRANS PNP 40V 1A TO225AA
- Datasheet:
- 2N4918G
ON Semiconductor 2N4918G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2N4918G.
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time2 Weeks
- Mounting TypeThrough Hole
- Package / CaseTO-225AA, TO-126-3
- Surface MountNO
- Number of Pins3
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingBulk
- Published2004
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC-40V
- Max Power Dissipation30W
- Peak Reflow Temperature (Cel)260
- Current Rating1A
- Frequency3MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part Number2N4918
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation30W
- Transistor ApplicationSWITCHING
- Halogen FreeHalogen Free
- Gain Bandwidth Product3MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)40V
- Max Collector Current3A
- DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 500mA 1V
- Current - Collector Cutoff (Max)500μA
- Vce Saturation (Max) @ Ib, Ic600mV @ 100mA, 1A
- Collector Emitter Breakdown Voltage40V
- Transition Frequency3MHz
- Collector Emitter Saturation Voltage600mV
- Collector Base Voltage (VCBO)40V
- Emitter Base Voltage (VEBO)5V
- hFE Min40
- Height11.049mm
- Length7.7216mm
- Width2.667mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2N4918G Overview
In this device, the DC current gain is 30 @ 500mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 600mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 100mA, 1A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (1A).3MHz is present in the transition frequency.Maximum collector currents can be below 3A volts.
2N4918G Features
the DC current gain for this device is 30 @ 500mA 1V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 3MHz
2N4918G Applications
There are a lot of ON Semiconductor
2N4918G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 30 @ 500mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 600mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 100mA, 1A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (1A).3MHz is present in the transition frequency.Maximum collector currents can be below 3A volts.
2N4918G Features
the DC current gain for this device is 30 @ 500mA 1V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 3MHz
2N4918G Applications
There are a lot of ON Semiconductor
2N4918G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2N4918G More Descriptions
1.0 A, 40 V PNP Bipolar Power Transistor
Trans GP BJT PNP 40V 3A 30000mW 3-Pin(3 Tab) TO-225 Box
Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin
2N Series 40 V 1 A Medium-Power Plastic PNP Silicon Transistor - TO-225
. . . designed for driver circuits switching and amplifier applications. These high-performance plastic devices feature:
Transistor, Pnp, -40V, -3A, To-225-3; Transistor Polarity:Pnp; Collector Emitter Voltage V(Br)Ceo:-40V; Transition Frequency Ft:3Mhz; Power Dissipation Pd:30W; Dc Collector Current:-3A; Dc Current Gain Hfe:10Hfe; Transistor Case Rohs Compliant: Yes |Onsemi 2N4918G
Trans GP BJT PNP 40V 3A 30000mW 3-Pin(3 Tab) TO-225 Box
Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin
2N Series 40 V 1 A Medium-Power Plastic PNP Silicon Transistor - TO-225
. . . designed for driver circuits switching and amplifier applications. These high-performance plastic devices feature:
Transistor, Pnp, -40V, -3A, To-225-3; Transistor Polarity:Pnp; Collector Emitter Voltage V(Br)Ceo:-40V; Transition Frequency Ft:3Mhz; Power Dissipation Pd:30W; Dc Collector Current:-3A; Dc Current Gain Hfe:10Hfe; Transistor Case Rohs Compliant: Yes |Onsemi 2N4918G
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