Central Semiconductor Corp 2N4424
- Part Number:
- 2N4424
- Manufacturer:
- Central Semiconductor Corp
- Ventron No:
- 2463216-2N4424
- Description:
- TRANS NPN 40V 0.5A TO-92
- Datasheet:
- 2N4424
Central Semiconductor Corp 2N4424 technical specifications, attributes, parameters and parts with similar specifications to Central Semiconductor Corp 2N4424.
- Factory Lead Time8 Weeks
- MountThrough Hole
- Package / CaseTO-92
- Published2001
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusActive
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- Max Operating Temperature150°C
- Min Operating Temperature-65°C
- Additional FeatureLOW NOISE
- HTS Code8541.21.00.95
- SubcategoryOther Transistors
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- JESD-30 CodeO-PBCY-T3
- Qualification StatusNot Qualified
- Number of Elements1
- PolarityNPN
- Power Dissipation-Max625mW
- Element ConfigurationSingle
- Transistor ApplicationAMPLIFIER
- Collector Emitter Voltage (VCEO)300mV
- Max Collector Current500mA
- Collector Emitter Breakdown Voltage40V
- Transition Frequency100MHz
- Collector Emitter Saturation Voltage300mV
- Collector Base Voltage (VCBO)60V
- Emitter Base Voltage (VEBO)5V
- hFE Min180
- DC Current Gain-Min (hFE)180
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
2N4424 Overview
This system offers maximum design flexibility due to a collector emitter saturation voltage of 300mV.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
2N4424 Features
a collector emitter saturation voltage of 300mV
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
2N4424 Applications
There are a lot of Central Semiconductor
2N4424 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This system offers maximum design flexibility due to a collector emitter saturation voltage of 300mV.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
2N4424 Features
a collector emitter saturation voltage of 300mV
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
2N4424 Applications
There are a lot of Central Semiconductor
2N4424 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2N4424 More Descriptions
Bipolar Transistor NPN Amplifier/Switch 500mA 40V 3-Pin TO-92 Through Hole Box
2N Series 40 V 500 mA NPN Through Hole Silicon Transistor - TO-92
Bipolar Transistors - BJT NPN Gen Pur SS
2N Series 40 V 500 mA NPN Through Hole Silicon Transistor - TO-92
Bipolar Transistors - BJT NPN Gen Pur SS
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