2N4410

Central Semiconductor Corp 2N4410

Part Number:
2N4410
Manufacturer:
Central Semiconductor Corp
Ventron No:
2845369-2N4410
Description:
TRANS NPN 80V 0.25A TO-92
ECAD Model:
Datasheet:
2N4410

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Specifications
Central Semiconductor Corp 2N4410 technical specifications, attributes, parameters and parts with similar specifications to Central Semiconductor Corp 2N4410.
  • Mounting Type
    Through Hole
  • Package / Case
    TO-226-3, TO-92-3 (TO-226AA)
  • Surface Mount
    NO
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Bulk
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Terminal Finish
    MATTE TIN
  • Terminal Position
    BOTTOM
  • Peak Reflow Temperature (Cel)
    NOT APPLICABLE
  • Reach Compliance Code
    unknown
  • Time@Peak Reflow Temperature-Max (s)
    NOT APPLICABLE
  • JESD-30 Code
    O-PBCY-T3
  • Qualification Status
    COMMERCIAL
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Power - Max
    625mW
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    60 @ 10mA 1V
  • Current - Collector Cutoff (Max)
    10nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    200mV @ 100μA, 1mA
  • Voltage - Collector Emitter Breakdown (Max)
    80V
  • Current - Collector (Ic) (Max)
    200mA
  • RoHS Status
    ROHS3 Compliant
Description
2N4410 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 60 @ 10mA 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 200mV @ 100μA, 1mA.This device displays a 80V maximum voltage - Collector Emitter Breakdown.

2N4410 Features
the DC current gain for this device is 60 @ 10mA 1V
the vce saturation(Max) is 200mV @ 100μA, 1mA


2N4410 Applications
There are a lot of Rochester Electronics, LLC
2N4410 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
2N4410 More Descriptions
2N4410 Series 80 V CE Breakdown 250 mA NPN General Purpose Amplifier - TO-92
Transistor GP BJT NPN 80V 250mA 3-Pin TO-92 Box
Bipolar Transistors - BJT NPN Low Lvl
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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