Central Semiconductor Corp 2N4410
- Part Number:
- 2N4410
- Manufacturer:
- Central Semiconductor Corp
- Ventron No:
- 2845369-2N4410
- Description:
- TRANS NPN 80V 0.25A TO-92
- Datasheet:
- 2N4410
Central Semiconductor Corp 2N4410 technical specifications, attributes, parameters and parts with similar specifications to Central Semiconductor Corp 2N4410.
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA)
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingBulk
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishMATTE TIN
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)NOT APPLICABLE
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)NOT APPLICABLE
- JESD-30 CodeO-PBCY-T3
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE
- Power - Max625mW
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 10mA 1V
- Current - Collector Cutoff (Max)10nA ICBO
- Vce Saturation (Max) @ Ib, Ic200mV @ 100μA, 1mA
- Voltage - Collector Emitter Breakdown (Max)80V
- Current - Collector (Ic) (Max)200mA
- RoHS StatusROHS3 Compliant
2N4410 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 60 @ 10mA 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 200mV @ 100μA, 1mA.This device displays a 80V maximum voltage - Collector Emitter Breakdown.
2N4410 Features
the DC current gain for this device is 60 @ 10mA 1V
the vce saturation(Max) is 200mV @ 100μA, 1mA
2N4410 Applications
There are a lot of Rochester Electronics, LLC
2N4410 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 60 @ 10mA 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 200mV @ 100μA, 1mA.This device displays a 80V maximum voltage - Collector Emitter Breakdown.
2N4410 Features
the DC current gain for this device is 60 @ 10mA 1V
the vce saturation(Max) is 200mV @ 100μA, 1mA
2N4410 Applications
There are a lot of Rochester Electronics, LLC
2N4410 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2N4410 More Descriptions
2N4410 Series 80 V CE Breakdown 250 mA NPN General Purpose Amplifier - TO-92
Transistor GP BJT NPN 80V 250mA 3-Pin TO-92 Box
Bipolar Transistors - BJT NPN Low Lvl
Transistor GP BJT NPN 80V 250mA 3-Pin TO-92 Box
Bipolar Transistors - BJT NPN Low Lvl
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