2N4403TF

Fairchild/ON Semiconductor 2N4403TF

Part Number:
2N4403TF
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2464807-2N4403TF
Description:
TRANS PNP 40V 0.6A TO-92
ECAD Model:
Datasheet:
2N4403TF

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Specifications
Fairchild/ON Semiconductor 2N4403TF technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor 2N4403TF.
  • Lifecycle Status
    ACTIVE (Last Updated: 1 day ago)
  • Factory Lead Time
    6 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Number of Pins
    3
  • Weight
    240mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2007
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -40V
  • Max Power Dissipation
    625mW
  • Terminal Position
    BOTTOM
  • Current Rating
    -600mA
  • Frequency
    200MHz
  • Base Part Number
    2N4403
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    625mW
  • Transistor Application
    SWITCHING
  • Gain Bandwidth Product
    200MHz
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    40V
  • Max Collector Current
    600mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 150mA 2V
  • Vce Saturation (Max) @ Ib, Ic
    750mV @ 50mA, 500mA
  • Collector Emitter Breakdown Voltage
    40V
  • Transition Frequency
    200MHz
  • Collector Emitter Saturation Voltage
    750mV
  • Max Breakdown Voltage
    40V
  • Collector Base Voltage (VCBO)
    -40V
  • Emitter Base Voltage (VEBO)
    -5V
  • hFE Min
    100
  • Turn Off Time-Max (toff)
    255ns
  • Height
    5.33mm
  • Length
    5.2mm
  • Width
    4.19mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
2N4403TF Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 150mA 2V DC current gain.As it features a collector emitter saturation voltage of 750mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at -5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 200MHz in the part.Single BJT transistor can be broken down at a voltage of 40V volts.When collector current reaches its maximum, it can reach 600mA volts.

2N4403TF Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -600mA
a transition frequency of 200MHz


2N4403TF Applications
There are a lot of ON Semiconductor
2N4403TF applications of single BJT transistors.


Inverter
Interface
Driver
Muting
2N4403TF More Descriptions
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
Bipolar Transistors - BJT PNP Transistor General Purpose
PNP Bipolar Junction Transistor, TO-92
2N4403 Series 40 V CE Breakdown 0.6 A PNP General Purpose Amplifier - TO-92
Trans GP BJT PNP 40V 0.6A 625mW 3-Pin TO-92 T/R
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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