Fairchild/ON Semiconductor 2N4403TA
- Part Number:
- 2N4403TA
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3553727-2N4403TA
- Description:
- TRANS PNP 40V 0.6A TO-92
- Datasheet:
- 2N4403TA
Fairchild/ON Semiconductor 2N4403TA technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor 2N4403TA.
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time6 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Number of Pins3
- Weight240mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Box (TB)
- Published2007
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC-40V
- Max Power Dissipation625mW
- Terminal PositionBOTTOM
- Current Rating-600mA
- Frequency200MHz
- Base Part Number2N4403
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation625mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product200MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)40V
- Max Collector Current600mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 2V
- Vce Saturation (Max) @ Ib, Ic750mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage40V
- Transition Frequency200MHz
- Collector Emitter Saturation Voltage750mV
- Max Breakdown Voltage40V
- Collector Base Voltage (VCBO)-40V
- Emitter Base Voltage (VEBO)-5V
- hFE Min100
- Turn Off Time-Max (toff)255ns
- Height5.33mm
- Length5.2mm
- Width4.19mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2N4403TA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 2V.With a collector emitter saturation voltage of 750mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 750mV @ 50mA, 500mA.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -600mA.A transition frequency of 200MHz is present in the part.There is a breakdown input voltage of 40V volts that it can take.Collector current can be as low as 600mA volts at its maximum.
2N4403TA Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -600mA
a transition frequency of 200MHz
2N4403TA Applications
There are a lot of ON Semiconductor
2N4403TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 2V.With a collector emitter saturation voltage of 750mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 750mV @ 50mA, 500mA.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -600mA.A transition frequency of 200MHz is present in the part.There is a breakdown input voltage of 40V volts that it can take.Collector current can be as low as 600mA volts at its maximum.
2N4403TA Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -600mA
a transition frequency of 200MHz
2N4403TA Applications
There are a lot of ON Semiconductor
2N4403TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2N4403TA More Descriptions
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
Tape & Box (TB) Through Hole PNP Single Bipolar (BJT) Transistor 100 @ 150mA 2V -600mA 625mW 200MHz
2N4403 Series 40 V CE Breakdown 0.6 A PNP General Purpose Amplifier - TO-92
Transistor GP BJT PNP 40V 0.6A 3-Pin TO-92 Ammo - Product that comes on tape, but is not reeled (Alt
PNP Bipolar Junction Transistor, TO-92
Trans GP BJT PNP 40V 0.6A 625mW 3-Pin TO-92 Fan-Fold
40V 625mW 600mA 100@150mA2V 200MHz 750mV@500mA50mA PNP -55¡Í~ 150¡Í@(Tj) TO-92L Bipolar Transistors - BJT ROHS
Transistor, BIPOL, PNP, -40V, TO-92-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-40V; Transition Frequency ft:200MHz; Power
Tape & Box (TB) Through Hole PNP Single Bipolar (BJT) Transistor 100 @ 150mA 2V -600mA 625mW 200MHz
2N4403 Series 40 V CE Breakdown 0.6 A PNP General Purpose Amplifier - TO-92
Transistor GP BJT PNP 40V 0.6A 3-Pin TO-92 Ammo - Product that comes on tape, but is not reeled (Alt
PNP Bipolar Junction Transistor, TO-92
Trans GP BJT PNP 40V 0.6A 625mW 3-Pin TO-92 Fan-Fold
40V 625mW 600mA 100@150mA2V 200MHz 750mV@500mA50mA PNP -55¡Í~ 150¡Í@(Tj) TO-92L Bipolar Transistors - BJT ROHS
Transistor, BIPOL, PNP, -40V, TO-92-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-40V; Transition Frequency ft:200MHz; Power
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