2N4401RLRPG

ON Semiconductor 2N4401RLRPG

Part Number:
2N4401RLRPG
Manufacturer:
ON Semiconductor
Ventron No:
2467991-2N4401RLRPG
Description:
TRANS NPN 40V 0.6A TO-92
ECAD Model:
Datasheet:
2N4401RLRPG

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Specifications
ON Semiconductor 2N4401RLRPG technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2N4401RLRPG.
  • Mounting Type
    Through Hole
  • Package / Case
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Surface Mount
    NO
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Box (TB)
  • JESD-609 Code
    e1
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Terminal Finish
    TIN SILVER COPPER
  • Terminal Position
    BOTTOM
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    3
  • JESD-30 Code
    O-PBCY-T3
  • Qualification Status
    COMMERCIAL
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Power - Max
    625mW
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 150mA 1V
  • Vce Saturation (Max) @ Ib, Ic
    750mV @ 50mA, 500mA
  • Voltage - Collector Emitter Breakdown (Max)
    40V
  • Current - Collector (Ic) (Max)
    600mA
  • Transition Frequency
    250MHz
  • Frequency - Transition
    250MHz
  • Turn Off Time-Max (toff)
    255ns
  • Turn On Time-Max (ton)
    35ns
  • RoHS Status
    ROHS3 Compliant
Description
2N4401RLRPG Overview
DC current gain in this device equals 100 @ 150mA 1V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 750mV @ 50mA, 500mA.As a result, the part has a transition frequency of 250MHz.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.

2N4401RLRPG Features
the DC current gain for this device is 100 @ 150mA 1V
the vce saturation(Max) is 750mV @ 50mA, 500mA
a transition frequency of 250MHz


2N4401RLRPG Applications
There are a lot of Rochester Electronics, LLC
2N4401RLRPG applications of single BJT transistors.


Inverter
Interface
Driver
Muting
2N4401RLRPG More Descriptions
NPN Bipolar Transistor, TO-92 40 V, 0.6 A
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Transistor GP BJT NPN 40V 0.6A 3-Pin TO-92 T/R
Bipolar Transistor; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:40V; Collector Emitter Saturation Voltage, Vce(sat):100V; Power Dissipation, Pd:0.625W; DC Current Gain Min (hfe):100; Package/Case:TO-92 ;RoHS Compliant: Yes
BIPOLAR TRANSISTOR; Transistor Polarity:; BIPOLAR TRANSISTOR; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency Typ ft:250MHz; Power Dissipation Pd:625mW; DC Collector Current:600mA; DC Current Gain hFE:250; Operating Temperature Min:-55°C
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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