ON Semiconductor 2N4401G

Name: 2N4401G
Brand: ON Semiconductor
SKU: 2467911-2N4401G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: 2N4401G

Manufacturer:: ON Semiconductor

Ventron No:: 2467911-2N4401G

Description:: TRANS NPN 40V 0.6A TO-92

ECAD Model:

Datasheet:: 2N4401G

Part Pictures

Specifications

ON Semiconductor 2N4401G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2N4401G.

Lifecycle Status
LAST SHIPMENTS (Last Updated: 3 days ago)
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Surface Mount
NO
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Published
2001
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory
Other Transistors
Voltage - Rated DC
40V
Max Power Dissipation
625mW
Terminal Position
BOTTOM
Current Rating
600mA
Frequency
250MHz
Base Part Number
2N4401
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
625mW
Transistor Application
SWITCHING
Gain Bandwidth Product
250MHz
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
40V
Max Collector Current
600mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 1V
Vce Saturation (Max) @ Ib, Ic
750mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
40V
Transition Frequency
250MHz
Collector Emitter Saturation Voltage
750mV
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
6V
hFE Min
20
Turn Off Time-Max (toff)
255ns
Height
5.33mm
Length
5.2mm
Width
4.19mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
RoHS Compliant
Lead Free
Lead Free

Description

2N4401G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 750mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 750mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is 600mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 250MHz.During maximum operation, collector current can be as low as 600mA volts.

2N4401G Features
the DC current gain for this device is 100 @ 150mA 1V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 250MHz

2N4401G Applications
There are a lot of ON Semiconductor
2N4401G applications of single BJT transistors.

Inverter
Interface
Driver
Muting

2N4401G More Descriptions

NPN Bipolar Transistor, TO-92 40 V, 0.6 A
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Transistor GP BJT NPN 40V 0.6A 3-Pin TO-92 Bulk
Transistor, Bipolar,Si,NPN,General Purpose,VCEO 40VDC,IC 600mA,PD 1.5W,TO-92 | ON Semiconductor 2N4401G
Bipolar Transistor; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:40V; Collector Emitter Saturation Voltage, Vce(sat):0.75V; Power Dissipation, Pd:0.625W; DC Current Gain Min (hfe):100; Package/Case:TO-92 ;RoHS Compliant: Yes
TRANSISTOR, NPN, TO-92; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 250MHz; Power Dissipation Pd: 625mW; DC Collector Current: 600mA; DC Current Gain hFE: 250hFE; Transistor Case Style: TO-92; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 400mV; Continuous Collector Current Ic Max: 600mA; Current Ic @ Vce Sat: 150mA; Current Ic Continuous a Max: 600mA; Current Ic Fall Time Measurement: 150mA; Current Ic hFE: 1mA; Device Marking: 2N4401; Fall Time @ Ic: 255ns; Full Power Rating Temperature: 25°C; Gain Bandwidth ft Min: 250MHz; Gain Bandwidth ft Typ: 250MHz; Hfe Min: 40; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Pin Configuration: b; Power Dissipation Ptot Max: 625mW; Voltage Vcbo: 60V